Invention Grant
- Patent Title: Method for thermal treatment using heat reservoir chamber
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Application No.: US15404672Application Date: 2017-01-12
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Publication No.: US10204809B2Publication Date: 2019-02-12
- Inventor: Qiang Wu , Huayong Hu , Deping Kong
- Applicant: Semiconductor Manufacturing International (Beijing) Corporation , Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Beijing CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Beijing CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201410350605 20140722
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/67 ; H01L21/324 ; H01L21/66 ; H05B1/02
Abstract:
The present disclosure provides a thermal treatment chamber. The thermal treatment chamber includes a wafer holder to hold a to-be-processed wafer; a heat reservoir located under the wafer holder, but being separated from the wafer holder, for adjusting a temperature of the wafer holder based on the to-be-processed wafer; and a first driving unit connected to the heat reservoir for adjusting a distance between the wafer holder and the heat reservoir to adjust the temperature of the wafer holder.
Public/Granted literature
- US20170133251A1 METHOD FOR THERMAL TREATMENT USING HEAT RESERVOIR CHAMBER Public/Granted day:2017-05-11
Information query
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