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    Organometallic radiation patternable coatings with low defectivity and corresponding methods
    2.
    发明授权
    Organometallic radiation patternable coatings with low defectivity and corresponding methods 有权

    公开(公告)号：US12072626B2

    公开(公告)日：2024-08-27

    申请号：US17180500

    申请日：2021-02-19

    Applicant: Inpria Corporation

    Inventor： Benjamin L. Clark ,  Gaetano Giordano ,  Shu-Hao L. Chang ,  Dominick Smiddy ,  Mark Geniza ,  Craig M. Gates ,  Jan Doise ,  Peter de Schepper

    IPC: G03F7/004 ,  G03F7/16

    CPC classification number: G03F7/0042 ,  G03F7/162 ,  G03F7/168

    Abstract: In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.

    ORGANOMETALLIC RADIATION PATTERNABLE COATINGS WITH LOW DEFECTIVITY AND CORRESPONDING METHODS
    4.
    发明申请
    ORGANOMETALLIC RADIATION PATTERNABLE COATINGS WITH LOW DEFECTIVITY AND CORRESPONDING METHODS 有权

    公开(公告)号：US20240369923A1

    公开(公告)日：2024-11-07

    申请号：US18778388

    申请日：2024-07-19

    Applicant: Inpria Corporation

    Inventor： Benjamin L. Clark ,  Gaetano Giordano ,  Shu-Hao Chang ,  Dominick Smiddy ,  Mark Geniza ,  Craig M. Gates ,  Jan Doise ,  Peter De Schepper

    IPC: G03F7/004 ,  G03F7/16

    Abstract: In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Methods are provided for improved filtering for particle removal from radiation patternable organometallic resist compositions.

    APPARATUSES FOR REDUCING METAL RESIDUE IN EDGE BEAD REGION FROM METAL-CONTAINING RESISTS
    8.
    发明申请
    APPARATUSES FOR REDUCING METAL RESIDUE IN EDGE BEAD REGION FROM METAL-CONTAINING RESISTS 审中-公开

    公开(公告)号：US20200209756A1

    公开(公告)日：2020-07-02

    申请号：US16810924

    申请日：2020-03-06

    Applicant: Inpria Corporation

    Inventor： Mollie Waller ,  Brian J. Cardineau ,  Kai Jiang ,  Alan J. Telecky ,  Stephen T. Meyers ,  Benjamin L. Clark

    IPC: G03F7/42 ,  H01L21/67 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  G03F7/004

    Abstract: Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.

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