公开(公告)号：US20240213021A1

公开(公告)日：2024-06-27

申请号：US18109430

申请日：2023-02-14

申请人： NATIONAL TAIWAN UNIVERSITY

发明人： Yi-Chia CHOU ,  Chang-Hsun HUANG

IPC分类号： H01L21/02 ,  H01L21/324

CPC分类号： H01L21/0254 ,  H01L21/02076 ,  H01L21/02381 ,  H01L21/02546 ,  H01L21/3245

摘要： A method for preparing a semiconductor layer comprises the following steps: providing a mica substrate; depositing a plurality of semiconductor films on the mica substrate to form a semiconductor substrate; and cooling the semiconductor substrate at a cooling rate to separate the plurality of semiconductor films from the mica substrate to obtain a semiconductor layer, wherein the cooling rate ranges from 10° C./min to 50° C./min. Herein, the plurality of semiconductor films comprise a first semiconductor film and a second semiconductor film, the first semiconductor film is formed at a first temperature, the second semiconductor film is formed at a second temperature, the first temperature is lower than the second temperature, and the first semiconductor film is disposed between the mica substrate and the second semiconductor film.

公开(公告)号：US20240079274A1

公开(公告)日：2024-03-07

申请号：US18505215

申请日：2023-11-09

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Michael J. SEDDON

IPC分类号： H01L21/78 ,  H01L21/02 ,  H01L21/268 ,  H01L21/304 ,  H01L21/683 ,  H01L23/544

CPC分类号： H01L21/78 ,  H01L21/02076 ,  H01L21/268 ,  H01L21/3043 ,  H01L21/6836 ,  H01L23/544 ,  B23K26/53

摘要： Implementations of methods of forming a plurality of semiconductor die may include forming a damage layer beneath a surface of a die street in a semiconductor substrate, singulating the semiconductor substrate along the die street into a plurality of semiconductor die, and removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die.

公开(公告)号：US11854889B2

公开(公告)日：2023-12-26

申请号：US16929542

申请日：2020-07-15

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Michael J. Seddon

IPC分类号： H01L21/78 ,  H01L21/268 ,  H01L21/02 ,  H01L21/304 ,  H01L21/683 ,  H01L23/544 ,  B23K26/53 ,  B23K26/00 ,  B23K101/40

CPC分类号： H01L21/78 ,  H01L21/02076 ,  H01L21/268 ,  H01L21/3043 ,  H01L21/6836 ,  H01L23/544 ,  B23K26/0006 ,  B23K26/53 ,  B23K2101/40 ,  H01L2223/5446

摘要： Implementations of methods of forming a plurality of semiconductor die may include forming a damage layer beneath a surface of a die street in a semiconductor substrate, singulating the semiconductor substrate along the die street into a plurality of semiconductor die, and removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die.

公开(公告)号：US20190088637A1

公开(公告)日：2019-03-21

申请号：US15711937

申请日：2017-09-21

申请人： Micron Technology, Inc.

发明人： Chandra S. Tiwari ,  Tony M. Lindenberg ,  Jonathan S. Hacker ,  Christopher J. Gambee ,  Kurt J. Bossart

IPC分类号： H01L25/00 ,  H01L23/00 ,  H01L21/02

CPC分类号： H01L25/50 ,  H01L21/02021 ,  H01L21/02076 ,  H01L21/6835 ,  H01L24/03 ,  H01L24/71 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381

摘要： A semiconductor device assembly that includes a first side of a semiconductor device supported on a substrate to permit the processing of a second side of the semiconductor device. A filler material deposited on the semiconductor device supports the semiconductor device on the substrate. The filler material does not adhere to the semiconductor device or the substrate. Alternatively, the filler material may be deposited on the substrate. Instead of a filler material, the substrate may include a topography configured to support the semiconductor device. Adhesive applied between an outer edge of the first side of the semiconductor and the substrate bonds the outer edge of the semiconductor device to the substrate to form a semiconductor device assembly. A second side of the semiconductor device may then be processed and the outer edge of the semiconductor device may be cut off to release the semiconductor device from the assembly.

公开(公告)号：US09865564B2

公开(公告)日：2018-01-09

申请号：US14624601

申请日：2015-02-18

申请人： GLOBALFOUNDRIES Inc.

发明人： Maxime Cadotte ,  Luc Guerin ,  Van Thanh Truong ,  Steve Whitehead

IPC分类号： B32B38/10 ,  B32B43/00 ,  H01L21/00 ,  H01L23/00 ,  B08B7/00 ,  H01L21/02 ,  H01L21/311 ,  B32B38/00 ,  B23K103/00

CPC分类号： H01L24/799 ,  B08B7/0042 ,  B23K2103/42 ,  B23K2103/50 ,  B32B38/0008 ,  B32B38/10 ,  B32B43/006 ,  B32B2457/14 ,  H01L21/02076 ,  H01L21/31127 ,  H01L24/27 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05442 ,  H01L2924/07025 ,  H01L2924/12042 ,  H01L2924/3025 ,  H01L2924/40501 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/1917 ,  H01L2924/00

摘要： A system for laser ashing of polyimide for a semiconductor manufacturing process is provided. The system includes: a semiconductor chip, a top chip attached to the semiconductor chip by a connection layer, a supporting material, a polyimide glue layer disposed between the supporting material and semiconductor chip, a plasma asher, and an ashing laser configured to ash the polyimide glue on the semiconductor chip.

公开(公告)号：US09799507B2

公开(公告)日：2017-10-24

申请号：US14517422

申请日：2014-10-17

申请人： Skyworks Solutions, Inc.

发明人： Steve Canale ,  David James Zapp

IPC分类号： B23Q1/00 ,  H01L21/02 ,  B23Q3/08 ,  H01L21/683 ,  H01L21/687

CPC分类号： H01L21/02076 ,  B23Q3/084 ,  H01L21/6838 ,  H01L21/68735 ,  Y10S269/90 ,  Y10S269/903 ,  Y10T428/21

摘要： Disclosed are devices and methodologies for cleaning wafers in wafer processing operations such as solvent cleaning. In an example situation, a wafer that has been separated from a support plate can be cleaned. The wafer still needs to be handled carefully during such a cleaning operation. Various devices and methodologies that facilitate efficient handling of wafers and solvent cleaning operations are disclosed.

公开(公告)号：US09748182B2

公开(公告)日：2017-08-29

申请号：US15370638

申请日：2016-12-06

申请人： DISCO CORPORATION

发明人： Masaru Nakamura

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L21/78 ,  H01L23/544 ,  H01L21/304 ,  H01L21/683 ,  H01L21/268 ,  H01L21/02 ,  H01L21/3065

CPC分类号： H01L23/562 ,  H01L21/02076 ,  H01L21/268 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/67051 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6715 ,  H01L21/6836 ,  H01L21/78 ,  H01L22/34 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386 ,  H01L2223/5446

摘要： Disclosed herein is a wafer processing method including a stacked member removing step of applying a laser beam having an absorption wavelength to a stacked member through a protective film along each division line formed on the front side of a wafer, thereby performing ablation to remove the stacked member present on each division line, a dividing step of applying an external force to the wafer to divide the wafer into individual device chips along each division line where a modified layer is previously formed, and a plasma etching step of supplying an etching gas in a plasma state to the wafer from the front side thereof after performing the stacked member removing step or after performing the dividing step, thereby removing damage due to the ablation in the stacked member removing step.

公开(公告)号：US09484210B2

公开(公告)日：2016-11-01

申请号：US14690972

申请日：2015-04-20

申请人： Semiconductor Components Industries, LLC

发明人： William F. Burghout ,  Dennis Lee Conner ,  Michael J. Seddon ,  Jay A. Yoder ,  Gordon M. Grivna

IPC分类号： H01L21/78 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02076 ,  H01L21/3043 ,  H01L21/3046 ,  H01L21/3065 ,  H01L21/67028 ,  H01L21/6836 ,  H01L21/78 ,  H01L21/7813 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2223/5446

摘要： In one embodiment, semiconductor die are singulated from a semiconductor wafer having a backmetal layer by placing the semiconductor wafer onto a carrier tape with the backmetal layer adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the backmetal layer within the singulation lines, and separating portions of the backmetal layer using a fluid.

摘要翻译： 在一个实施例中，通过将半导体晶片放置在载体带上，背衬层与载带相邻，将半导体晶片从具有背金属层的半导体晶片分离，通过半导体晶片形成分割线，以暴露分离线内的后金属层 并且使用流体分离后金属层的部分。

公开(公告)号：US09472458B2

公开(公告)日：2016-10-18

申请号：US14612994

申请日：2015-02-03

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Jason Michael Doub ,  Gordon M. Grivna

IPC分类号： H01L21/78 ,  H01L21/02 ,  H01L21/683 ,  H01L21/3065 ,  H01L21/67 ,  H01L23/544

CPC分类号： H01L21/02076 ,  H01L21/02334 ,  H01L21/3065 ,  H01L21/32131 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6715 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

摘要： In one embodiment, semiconductor die are singulated from a semiconductor wafer by placing the semiconductor wafer onto a carrier tape, forming singulation lines through the semiconductor wafer, and reducing the presence of residual contaminates on the semiconductor wafer.

摘要翻译： 在一个实施例中，通过将半导体晶片放置在载带上，通过半导体晶片形成分割线并减少半导体晶片上的残留污染物的存在，从半导体晶片将半导体管芯分离。

公开(公告)号：US09328318B2

公开(公告)日：2016-05-03

申请号：US14195285

申请日：2014-03-03

申请人： Dnyanesh Chandrakant Tamboli ,  Rajkumar Ramamurthi ,  David Barry Rennie ,  Madhukar Bhaskara Rao ,  Gautam Banerjee ,  Gene Everad Parris

发明人： Dnyanesh Chandrakant Tamboli ,  Rajkumar Ramamurthi ,  David Barry Rennie ,  Madhukar Bhaskara Rao ,  Gautam Banerjee ,  Gene Everad Parris

IPC分类号： H01L21/02 ,  C11D3/20 ,  B28D5/00 ,  C11D3/04 ,  C11D3/30 ,  C11D3/33 ,  C11D11/00 ,  H01L21/67 ,  C11D1/14 ,  H01L21/78

CPC分类号： C11D3/2082 ,  B28D5/0076 ,  C11D1/14 ,  C11D3/044 ,  C11D3/2075 ,  C11D3/30 ,  C11D3/33 ,  C11D11/0047 ,  H01L21/02076 ,  H01L21/67075 ,  H01L21/78 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/94 ,  H01L2224/03

摘要： A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.

摘要翻译： 公开了半导体晶圆切片的解决方案。 在通过锯切切割晶片的过程中，溶液抑制污染物残留物或颗粒的粘附，并且减少或消除暴露的金属化区域的腐蚀。 该溶液包含至少一种有机酸和/或其盐; 至少一种表面活性剂和/或至少一种碱; 和去离子水，该组合物的pH等于或大于4.该溶液还可以包含螯合剂，消泡剂或分散剂。