公开(公告)号：US11942676B2

公开(公告)日：2024-03-26

申请号：US18151657

申请日：2023-01-09

申请人： Tahoe Research, Ltd.

发明人： Mohamed A. Megahed

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L23/66 ,  H01L25/00 ,  H01L25/065 ,  H01L25/16 ,  H01Q1/22 ,  H01Q1/38 ,  H01Q1/48

CPC分类号： H01Q1/2291 ,  H01L23/49838 ,  H01L23/66 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/50 ,  H01Q1/38 ,  H01Q1/48 ,  H01L24/48 ,  H01L24/73 ,  H01L2223/6677 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2224/73265 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/73204 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2924/00012 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method, apparatus and system with an autonomic, self-healing polymer capable of slowing crack propagation within the polymer and slowing delamination at a material interface.

公开(公告)号：US20230378126A1

公开(公告)日：2023-11-23

申请号：US17663857

申请日：2022-05-18

申请人： The Boeing Company

发明人： Peter D. Brewer ,  John J. Vajo ,  Sevag Terterian ,  Chia-Ming Chang ,  Charbel Abijaoude ,  Diego Eduardo Carrasco

IPC分类号： H01L23/00

CPC分类号： H01L24/98 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L2224/0508 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05172 ,  H01L2224/05179 ,  H01L2224/05181 ,  H01L2224/0517 ,  H01L2224/05123 ,  H01L2224/05101 ,  H01L2224/05117 ,  H01L2224/05138 ,  H01L2224/05565 ,  H01L2224/08145 ,  H01L2224/8012 ,  H01L2224/80203 ,  H01L2924/01046 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01041 ,  H01L2924/01073 ,  H01L2924/01057 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01021 ,  H01L2924/01003 ,  H01L2924/01011 ,  H01L2924/01012

摘要： An inter-substrate bond structure includes an adhesion layer that attached to a first substrate, and an outer gas-permeable layer coupled to the adhesion layer. The outer gas-permeable layer expands and fractures in response to absorbing a gas. The inter-substrate bond structure includes an outer bond layer coupled to the outer gas-permeable layer. The outer bond layer forms an initial thermocompression bond with a mating layer on a second substrate. The initial thermocompression bond bonds the first substrate to the second substrate with the inter-substrate bond structure. The fracture in the inter-substrate bond structure debonds the first substrate from the second substrate while leaving a first portion of the inter-substrate bond structure attached to the first substrate.

公开(公告)号：US11716816B2

公开(公告)日：2023-08-01

申请号：US17364593

申请日：2021-06-30

申请人： IMBERATEK, LLC

发明人： Antti Iihola ,  Timo Jokela

IPC分类号： H05K7/00 ,  H05K1/18 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L21/48 ,  H05K3/46

CPC分类号： H05K1/188 ,  H01L21/4857 ,  H01L23/5383 ,  H01L23/5385 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L24/82 ,  H01L25/0655 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/24227 ,  H01L2224/82039 ,  H01L2224/92144 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07802 ,  H05K3/4602 ,  H05K3/4611 ,  H05K3/4652 ,  H05K2201/0355 ,  H05K2201/0394 ,  H05K2201/10674 ,  H05K2203/063 ,  Y10T29/4913 ,  Y10T29/49126 ,  Y10T29/49139 ,  Y10T29/49144 ,  Y10T29/49156 ,  H01L2924/07802 ,  H01L2924/00

摘要： This publication discloses an electronic module, comprising a first conductive pattern layer and a first insulating-material layer on at least one surface of the first conductive pattern layer, at least one opening in the first insulating-material layer that extends through the first insulating-material layer, a component having a contact surface with contact terminals, the component being arranged at least partially within the opening with its contact terminals electrically coupled to the first conductive pattern layer, a second insulating-material layer provided on the first insulating-material layer, and a conductive pattern embedded between the first and second insulating material layers. This publication additionally discloses a method for manufacturing an electronic module.

公开(公告)号：US11651975B2

公开(公告)日：2023-05-16

申请号：US16999481

申请日：2020-08-21

申请人： Samsung Electronics Co., Ltd.

发明人： Jae-in Won ,  Jong-kak Jang ,  Dong-woo Kang ,  Do-Yeon Kim

IPC分类号： H01L21/56 ,  H01L25/065 ,  H01L25/00 ,  H01L23/498 ,  H01L23/00 ,  H01L25/10

CPC分类号： H01L21/563 ,  H01L21/565 ,  H01L23/49816 ,  H01L24/45 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L23/49811 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/92 ,  H01L25/0655 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/4568 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45678 ,  H01L2224/45684 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2225/0652 ,  H01L2225/06517 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/1533 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/73204 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2924/00 ,  H01L2224/45144 ,  H01L2924/01004 ,  H01L2224/45144 ,  H01L2924/01046 ,  H01L2224/45144 ,  H01L2924/01022 ,  H01L2224/45144 ,  H01L2924/01077 ,  H01L2224/45144 ,  H01L2924/01074 ,  H01L2224/45144 ,  H01L2924/01078 ,  H01L2224/45144 ,  H01L2924/01039 ,  H01L2224/45144 ,  H01L2924/01058 ,  H01L2224/45144 ,  H01L2924/0102 ,  H01L2224/45144 ,  H01L2924/01057 ,  H01L2224/45144 ,  H01L2924/01024 ,  H01L2224/45144 ,  H01L2924/01025 ,  H01L2224/45144 ,  H01L2924/01027 ,  H01L2224/45139 ,  H01L2924/01004 ,  H01L2224/45139 ,  H01L2924/01046 ,  H01L2224/45139 ,  H01L2924/01022 ,  H01L2224/45139 ,  H01L2924/01077 ,  H01L2224/45139 ,  H01L2924/01074 ,  H01L2224/45139 ,  H01L2924/01078 ,  H01L2224/45139 ,  H01L2924/01039 ,  H01L2224/45139 ,  H01L2924/01058 ,  H01L2224/45139 ,  H01L2924/0102 ,  H01L2224/45139 ,  H01L2924/01057 ,  H01L2224/45139 ,  H01L2924/01024 ,  H01L2224/45139 ,  H01L2924/01025 ,  H01L2224/45139 ,  H01L2924/01027 ,  H01L2224/45147 ,  H01L2924/01004 ,  H01L2224/45147 ,  H01L2924/01046 ,  H01L2224/45147 ,  H01L2924/01022 ,  H01L2224/45147 ,  H01L2924/01077 ,  H01L2224/45147 ,  H01L2924/01074 ,  H01L2224/45147 ,  H01L2924/01078 ,  H01L2224/45147 ,  H01L2924/01039 ,  H01L2224/45147 ,  H01L2924/01058 ,  H01L2224/45147 ,  H01L2924/0102 ,  H01L2224/45147 ,  H01L2924/01057 ,  H01L2224/45147 ,  H01L2924/01024 ,  H01L2224/45147 ,  H01L2924/01025 ,  H01L2224/45147 ,  H01L2924/01027

摘要： A stack package and a method of manufacturing the stack package are provided. The method includes: attaching a first semiconductor device onto a first surface of a first package substrate; attaching a molding resin material layer onto a first surface of a second package substrate; arranging the first surface of the first package substrate and the first surface of the second package substrate to face each other; compressing the first package substrate and the second package substrate while reflowing the molding resin material layer; and hardening the reflowed molding resin material layer.

公开(公告)号：US20190088608A1

公开(公告)日：2019-03-21

申请号：US15954254

申请日：2018-04-16

申请人： Texas Instruments Incorporated

发明人： Nazila Dadvand ,  Salvatore Frank Pavone ,  Christopher Daniel Manack

IPC分类号： H01L23/00 ,  C25D5/12

CPC分类号： H01L24/11 ,  C25D3/30 ,  C25D3/38 ,  C25D3/56 ,  C25D3/562 ,  C25D3/60 ,  C25D5/022 ,  C25D5/10 ,  C25D5/12 ,  C25D5/18 ,  C25D5/505 ,  C25D7/00 ,  C25D7/123 ,  H01L21/288 ,  H01L23/49524 ,  H01L23/49582 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05096 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13284 ,  H01L2224/13582 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13613 ,  H01L2224/13639 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/1368 ,  H01L2224/13684 ,  H01L2224/13693 ,  H01L2224/16245 ,  H01L2224/16503 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01042 ,  H01L2924/01027 ,  H01L2924/01028

摘要： A microelectronic device includes a reflow structure. The reflow structure has a copper-containing member and a solder member, and a barrier layer between them. The barrier layer has metal grains, with a diffusion barrier filler between the metal grains. The metal grains include at least a first metal and a second metal, each selected from nickel, cobalt, lanthanum, and cerium, with each having a concentration in the metal grains of at least 10 weight percent. The diffusion barrier filler includes at least a third metal, selected from tungsten and molybdenum. A combined concentration of tungsten and molybdenum in the diffusion barrier filler is higher than in the metal grains to provide a desired resistance to diffusion of copper. The barrier layer includes 2 weight percent to 15 weight percent of the combined concentration of tungsten, and molybdenum. A bump bond structure and a lead frame package are disclosed.

公开(公告)号：US20190081023A1

公开(公告)日：2019-03-14

申请号：US16189513

申请日：2018-11-13

申请人： Intel Corporation

发明人： John Guzek

IPC分类号： H01L25/065 ,  H01L25/16 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L25/0657 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/82 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68359 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/19 ,  H01L2224/2101 ,  H01L2224/2105 ,  H01L2224/221 ,  H01L2224/821 ,  H01L2224/8234 ,  H01L2224/8236 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2924/00

摘要： Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a cavity in a plating material to hold a die, attaching the die in the cavity, forming a dielectric material adjacent the die, forming vias in the dielectric material adjacent the die, forming PoP lands in the vias, forming interconnects in the vias, and then removing the plating material to expose the PoP lands and die, wherein the die is disposed above the PoP lands.

公开(公告)号：US09972595B2

公开(公告)日：2018-05-15

申请号：US14142152

申请日：2013-12-27

申请人： TANAKA DENSHI KOGYO K.K.

发明人： Yuki Antoku ,  Kazuhiko Yasuhara ,  Jun Chiba ,  Wei Chen ,  Junichi Okazaki ,  Nanako Maeda

IPC分类号： H01L23/00

CPC分类号： H01L24/45 ,  H01L24/05 ,  H01L24/43 ,  H01L24/48 ,  H01L2223/6611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/43 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45565 ,  H01L2224/45639 ,  H01L2224/48511 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2924/00011 ,  Y10T428/2958 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01204 ,  H01L2924/01045 ,  H01L2924/01077 ,  H01L2924/01044 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/01026 ,  H01L2924/01012 ,  H01L2924/0103 ,  H01L2924/01013 ,  H01L2924/01049 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/01004 ,  H01L2924/01083 ,  H01L2924/01034 ,  H01L2924/01058 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/0102 ,  H01L2924/01063 ,  H01L2924/01203 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2924/01025 ,  H01L2924/00013 ,  H01L2924/01079 ,  H01L2924/0105 ,  H01L2924/01022 ,  H01L2924/01052 ,  H01L2224/45644 ,  H01L2924/00015 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2924/01048

摘要： A bonding wire for a high-speed signal line for connecting a pad electrode of a semiconductor device and a lead electrode on a circuit board contains palladium (Pd), platinum (Pt), silver (Ag), and a trace additive element.

公开(公告)号：US09905928B2

公开(公告)日：2018-02-27

申请号：US14268082

申请日：2014-05-02

申请人： L. Pierre de Rochemont

发明人： L. Pierre de Rochemont

IPC分类号： H01Q15/02 ,  H01Q9/04 ,  B82Y30/00 ,  H01C7/00 ,  H01C17/00 ,  H01C17/065 ,  H01G4/10 ,  H01G4/33 ,  H01Q1/22 ,  H01Q1/38 ,  H01Q15/00 ,  H01L23/64 ,  H01L23/498 ,  H05K1/02 ,  H05K1/09 ,  H05K1/16 ,  H05K3/20

CPC分类号： H01Q9/0414 ,  B82Y30/00 ,  C04B2235/768 ,  C04B2235/781 ,  H01C7/003 ,  H01C17/003 ,  H01C17/06533 ,  H01G4/10 ,  H01G4/1209 ,  H01G4/33 ,  H01L23/49822 ,  H01L23/642 ,  H01L23/647 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01037 ,  H01L2924/01057 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01Q1/2283 ,  H01Q1/38 ,  H01Q15/0086 ,  H05K1/0298 ,  H05K1/092 ,  H05K1/16 ,  H05K1/162 ,  H05K1/165 ,  H05K1/167 ,  H05K3/207 ,  H05K2201/017 ,  H05K2201/0175 ,  H05K2201/09763 ,  H05K2203/016 ,  H05K2203/0338 ,  H05K2203/121 ,  Y10T428/12493

摘要： An electrical component provides a ceramic element located on or in a dielectric substrate between and in contact with a pair of electrical conductors, wherein the ceramic element includes one or more metal oxides having fluctuations in metal-oxide compositional uniformity less than or equal to 1.5 mol % throughout the ceramic element. A method of fabricating an electrical component, provides or forming a ceramic element between and in contact with a pair of electrical conductors on a substrate including depositing a mixture of metalorganic precursors and causing simultaneous decomposition of the metal oxide precursors to form the ceramic element including one or more metal oxides.

公开(公告)号：US20170352635A1

公开(公告)日：2017-12-07

申请号：US15663802

申请日：2017-07-30

申请人： Semiconductor Components Industries, LLC

发明人： Shutesh Krishnan ,  Yun Sung Won

IPC分类号： H01L23/00 ,  H01L23/495

CPC分类号： H01L24/27 ,  H01L23/49513 ,  H01L23/49524 ,  H01L24/29 ,  H01L24/36 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/16225 ,  H01L2224/27318 ,  H01L2224/27334 ,  H01L2224/29 ,  H01L2224/29006 ,  H01L2224/29101 ,  H01L2224/29199 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/293 ,  H01L2224/32013 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48247 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/838 ,  H01L2224/8384 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/351 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/37099

摘要： A bonding structure and a method for bonding components, wherein the bonding structure includes a nanoparticle preform. In accordance with embodiments, the nanoparticle preform is placed on a substrate and a workpiece is placed on the nanoparticle preform.

公开(公告)号：US09705202B2

公开(公告)日：2017-07-11

申请号：US14609658

申请日：2015-01-30

申请人： Sony Corporation

发明人： Hirofumi Kawamura ,  Yasuhiro Okada

IPC分类号： H04B1/38 ,  H01Q21/00 ,  H01L23/48 ,  H01L23/66 ,  H01L25/065 ,  H01L25/10 ,  H01P3/12 ,  H01Q9/04 ,  H01Q23/00 ,  H01L23/00

CPC分类号： H01Q21/00 ,  H01L23/48 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/105 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2225/1005 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01042 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1903 ,  H01L2924/19104 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H01P3/121 ,  H01P3/122 ,  H01Q9/0407 ,  H01Q23/00 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A millimeter-wave dielectric transmission device. The millimeter-wave dielectric transmission device includes a semiconductor chip provided on one interposer substrate and capable of millimeter-wave dielectric transmission, an antenna structure connected to the semiconductor chip, two semiconductor packages including a molded resin configured to cover the semiconductor chip and the antenna structure, and a dielectric transmission path provided between the two semiconductor packages to transmit a millimeter wave signal. The semiconductor packages are mounted such that the antenna structures thereof are arranged with the dielectric transmission path interposed therebetween.