公开(公告)号：US20100193952A1

公开(公告)日：2010-08-05

申请号：US12386238

申请日：2009-04-14

申请人： Leonel Arana ,  Michael Newman ,  Devendra Natekar

发明人： Leonel Arana ,  Michael Newman ,  Devendra Natekar

IPC分类号： H01L23/48

CPC分类号： H01L21/76898 ,  H01L21/2885 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/11 ,  H01L2224/11424 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13009 ,  H01L2224/13216 ,  H01L2224/13224 ,  H01L2224/13239 ,  H01L2224/13244 ,  H01L2224/13247 ,  H01L2224/13284 ,  H01L2224/13384 ,  H01L2224/13386 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01322 ,  H01L2924/12033 ,  H01L2924/14 ,  H01L2924/0105 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method, apparatus and system with an electrically conductive through hole via of a composite material with a matrix forming a continuous phase and embedded particles, with a different material property than the matrix, forming a dispersed phase, the resulting composite material having a different material property than the matrix.

摘要翻译： 一种具有导电通孔通孔的方法，装置和系统，其具有形成连续相的基质的复合材料的导电通孔，并且具有与基质不同的材料性质的嵌入的颗粒，形成分散相，所得复合材料具有不同的材料 属性比矩阵。

公开(公告)号：US09230935B2

公开(公告)日：2016-01-05

申请号：US14557227

申请日：2014-12-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Cheng Lin ,  Hsiu-Jen Lin ,  Cheng-Ting Chen ,  Wei-Yu Chen ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L23/02 ,  H01L23/00 ,  H01L23/498 ,  H01L25/10 ,  H01L25/065 ,  H01L25/00 ,  H05K3/34 ,  H05K3/40 ,  H01L25/07

CPC分类号： H01L24/16 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/48 ,  H01L24/81 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/06181 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13216 ,  H01L2224/13224 ,  H01L2224/13239 ,  H01L2224/13244 ,  H01L2224/13247 ,  H01L2224/13255 ,  H01L2224/13284 ,  H01L2224/13309 ,  H01L2224/13317 ,  H01L2224/13318 ,  H01L2224/1332 ,  H01L2224/13338 ,  H01L2224/13349 ,  H01L2224/13355 ,  H01L2224/1336 ,  H01L2224/13366 ,  H01L2224/137 ,  H01L2224/13809 ,  H01L2224/13817 ,  H01L2224/13818 ,  H01L2224/1382 ,  H01L2224/13838 ,  H01L2224/13849 ,  H01L2224/13855 ,  H01L2224/1386 ,  H01L2224/13866 ,  H01L2224/14181 ,  H01L2224/1601 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16506 ,  H01L2224/1703 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/384 ,  H05K3/3436 ,  H05K3/4015 ,  H05K2201/10515 ,  Y02P70/613 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/01032 ,  H01L2924/01015 ,  H01L2924/01058 ,  H01L2924/00012 ,  H01L2924/0105 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A package on package structure includes a first substrate having a first region and a second region, a bump formed on the first region of the first substrate, a first semiconductor die bonded to the second region of the first substrate, and a semiconductor die package bonded to the first substrate. The bump includes a metallic structure and a plurality of minor elements dispersed in the metallic structure. The semiconductor die package includes a connector bonded to the bump, and the first semiconductor die is between the semiconductor die package and the first substrate.

摘要翻译： 封装结构包括具有第一区域和第二区域的第一基板，形成在第一基板的第一区域上的凸块，与第一基板的第二区域接合的第一半导体管芯，以及半导体管芯封装 到第一底物。 凸块包括分散在金属结构中的金属结构和多个次要元件。 半导体管芯封装包括接合到凸块的连接器，并且第一半导体管芯位于半导体管芯封装和第一衬底之间。

公开(公告)号：US20190088608A1

公开(公告)日：2019-03-21

申请号：US15954254

申请日：2018-04-16

申请人： Texas Instruments Incorporated

发明人： Nazila Dadvand ,  Salvatore Frank Pavone ,  Christopher Daniel Manack

IPC分类号： H01L23/00 ,  C25D5/12

CPC分类号： H01L24/11 ,  C25D3/30 ,  C25D3/38 ,  C25D3/56 ,  C25D3/562 ,  C25D3/60 ,  C25D5/022 ,  C25D5/10 ,  C25D5/12 ,  C25D5/18 ,  C25D5/505 ,  C25D7/00 ,  C25D7/123 ,  H01L21/288 ,  H01L23/49524 ,  H01L23/49582 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05096 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13284 ,  H01L2224/13582 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13613 ,  H01L2224/13639 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/1368 ,  H01L2224/13684 ,  H01L2224/13693 ,  H01L2224/16245 ,  H01L2224/16503 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01042 ,  H01L2924/01027 ,  H01L2924/01028

摘要： A microelectronic device includes a reflow structure. The reflow structure has a copper-containing member and a solder member, and a barrier layer between them. The barrier layer has metal grains, with a diffusion barrier filler between the metal grains. The metal grains include at least a first metal and a second metal, each selected from nickel, cobalt, lanthanum, and cerium, with each having a concentration in the metal grains of at least 10 weight percent. The diffusion barrier filler includes at least a third metal, selected from tungsten and molybdenum. A combined concentration of tungsten and molybdenum in the diffusion barrier filler is higher than in the metal grains to provide a desired resistance to diffusion of copper. The barrier layer includes 2 weight percent to 15 weight percent of the combined concentration of tungsten, and molybdenum. A bump bond structure and a lead frame package are disclosed.

公开(公告)号：US20140159233A1

公开(公告)日：2014-06-12

申请号：US13708461

申请日：2012-12-07

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chun-Cheng Lin ,  Hsiu-Jen Lin ,  Cheng-Ting Chen ,  Wei-Yu Chen ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L23/498 ,  H01L23/00

CPC分类号： H01L24/16 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/48 ,  H01L24/81 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/06181 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13216 ,  H01L2224/13224 ,  H01L2224/13239 ,  H01L2224/13244 ,  H01L2224/13247 ,  H01L2224/13255 ,  H01L2224/13284 ,  H01L2224/13309 ,  H01L2224/13317 ,  H01L2224/13318 ,  H01L2224/1332 ,  H01L2224/13338 ,  H01L2224/13349 ,  H01L2224/13355 ,  H01L2224/1336 ,  H01L2224/13366 ,  H01L2224/137 ,  H01L2224/13809 ,  H01L2224/13817 ,  H01L2224/13818 ,  H01L2224/1382 ,  H01L2224/13838 ,  H01L2224/13849 ,  H01L2224/13855 ,  H01L2224/1386 ,  H01L2224/13866 ,  H01L2224/14181 ,  H01L2224/1601 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16506 ,  H01L2224/1703 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/384 ,  H05K3/3436 ,  H05K3/4015 ,  H05K2201/10515 ,  Y02P70/613 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/01032 ,  H01L2924/01015 ,  H01L2924/01058 ,  H01L2924/00012 ,  H01L2924/0105 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A package on package structure includes a first substrate having a first region and a second region, a bump formed on the first region of the first substrate, a first semiconductor die bonded to the second region of the first substrate, and a semiconductor die package bonded to the first substrate. The bump includes a metallic structure and a plurality of minor elements dispersed in the metallic structure. The semiconductor die package includes a connector bonded to the bump, and the first semiconductor die is between the semiconductor die package and the first substrate.

摘要翻译： 封装结构包括具有第一区域和第二区域的第一基板，形成在第一基板的第一区域上的凸块，与第一基板的第二区域接合的第一半导体管芯，以及半导体管芯封装 到第一底物。 凸块包括分散在金属结构中的金属结构和多个次要元件。 半导体管芯封装包括接合到凸块的连接器，并且第一半导体管芯位于半导体管芯封装和第一衬底之间。

公开(公告)号：US20070001266A1

公开(公告)日：2007-01-04

申请号：US11174125

申请日：2005-06-30

申请人： Leonel Arana ,  Michael Newman ,  Devendra Natekar

发明人： Leonel Arana ,  Michael Newman ,  Devendra Natekar

IPC分类号： H01L29/40 ,  H01L21/44

CPC分类号： H01L21/76898 ,  H01L21/2885 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/11 ,  H01L2224/11424 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13009 ,  H01L2224/13216 ,  H01L2224/13224 ,  H01L2224/13239 ,  H01L2224/13244 ,  H01L2224/13247 ,  H01L2224/13284 ,  H01L2224/13384 ,  H01L2224/13386 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01322 ,  H01L2924/12033 ,  H01L2924/14 ,  H01L2924/0105 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method, apparatus and system with an electrically conductive through hole via of a composite material with a matrix forming a continuous phase and embedded particles, with a different material property than the matrix, forming a dispersed phase, the resulting composite material having a different material property than the matrix.

摘要翻译： 一种具有导电通孔通孔的方法，装置和系统，其具有形成连续相的基质的复合材料的导电通孔，并且具有与基质不同的材料性质的嵌入的颗粒，形成分散相，所得复合材料具有不同的材料 属性比矩阵。

公开(公告)号：US20150108638A1

公开(公告)日：2015-04-23

申请号：US14557227

申请日：2014-12-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Cheng Lin ,  Hsiu-Jen Lin ,  Cheng-Ting Chen ,  Wei-Yu Chen ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L23/00 ,  H01L25/07

CPC分类号： H01L24/16 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/48 ,  H01L24/81 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/06181 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13216 ,  H01L2224/13224 ,  H01L2224/13239 ,  H01L2224/13244 ,  H01L2224/13247 ,  H01L2224/13255 ,  H01L2224/13284 ,  H01L2224/13309 ,  H01L2224/13317 ,  H01L2224/13318 ,  H01L2224/1332 ,  H01L2224/13338 ,  H01L2224/13349 ,  H01L2224/13355 ,  H01L2224/1336 ,  H01L2224/13366 ,  H01L2224/137 ,  H01L2224/13809 ,  H01L2224/13817 ,  H01L2224/13818 ,  H01L2224/1382 ,  H01L2224/13838 ,  H01L2224/13849 ,  H01L2224/13855 ,  H01L2224/1386 ,  H01L2224/13866 ,  H01L2224/14181 ,  H01L2224/1601 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16506 ,  H01L2224/1703 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/384 ,  H05K3/3436 ,  H05K3/4015 ,  H05K2201/10515 ,  Y02P70/613 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/01032 ,  H01L2924/01015 ,  H01L2924/01058 ,  H01L2924/00012 ,  H01L2924/0105 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A package on package structure includes a first substrate having a first region and a second region, a bump formed on the first region of the first substrate, a first semiconductor die bonded to the second region of the first substrate, and a semiconductor die package bonded to the first substrate. The bump includes a metallic structure and a plurality of minor elements dispersed in the metallic structure. The semiconductor die package includes a connector bonded to the bump, and the first semiconductor die is between the semiconductor die package and the first substrate.

摘要翻译： 封装结构包括具有第一区域和第二区域的第一基板，形成在第一基板的第一区域上的凸块，与第一基板的第二区域接合的第一半导体管芯，以及半导体管芯封装 到第一底物。 凸块包括分散在金属结构中的金属结构和多个次要元件。 半导体管芯封装包括接合到凸块的连接器，并且第一半导体管芯位于半导体管芯封装和第一衬底之间。

公开(公告)号：US08901726B2

公开(公告)日：2014-12-02

申请号：US13708461

申请日：2012-12-07

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Cheng Lin ,  Hsiu-Jen Lin ,  Cheng-Ting Chen ,  Wei-Yu Chen ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L23/02 ,  H01L25/10 ,  H01L23/00 ,  H01L25/00 ,  H01L23/498 ,  H01L25/065

CPC分类号： H01L24/16 ,  H01L23/49816 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/48 ,  H01L24/81 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/06181 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13216 ,  H01L2224/13224 ,  H01L2224/13239 ,  H01L2224/13244 ,  H01L2224/13247 ,  H01L2224/13255 ,  H01L2224/13284 ,  H01L2224/13309 ,  H01L2224/13317 ,  H01L2224/13318 ,  H01L2224/1332 ,  H01L2224/13338 ,  H01L2224/13349 ,  H01L2224/13355 ,  H01L2224/1336 ,  H01L2224/13366 ,  H01L2224/137 ,  H01L2224/13809 ,  H01L2224/13817 ,  H01L2224/13818 ,  H01L2224/1382 ,  H01L2224/13838 ,  H01L2224/13849 ,  H01L2224/13855 ,  H01L2224/1386 ,  H01L2224/13866 ,  H01L2224/14181 ,  H01L2224/1601 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16506 ,  H01L2224/1703 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/384 ,  H05K3/3436 ,  H05K3/4015 ,  H05K2201/10515 ,  Y02P70/613 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/01032 ,  H01L2924/01015 ,  H01L2924/01058 ,  H01L2924/00012 ,  H01L2924/0105 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A package on package structure includes a first substrate having a first region and a second region, a bump formed on the first region of the first substrate, a first semiconductor die bonded to the second region of the first substrate, and a semiconductor die package bonded to the first substrate. The bump includes a metallic structure and a plurality of minor elements dispersed in the metallic structure. The semiconductor die package includes a connector bonded to the bump, and the first semiconductor die is between the semiconductor die package and the first substrate.

摘要翻译： 封装结构包括具有第一区域和第二区域的第一基板，形成在第一基板的第一区域上的凸块，与第一基板的第二区域接合的第一半导体管芯，以及半导体管芯封装 到第一底物。 凸块包括分散在金属结构中的金属结构和多个次要元件。 半导体管芯封装包括接合到凸块的连接器，并且第一半导体管芯位于半导体管芯封装和第一衬底之间。

公开(公告)号：US07528006B2

公开(公告)日：2009-05-05

申请号：US11174125

申请日：2005-06-30

申请人： Leonel Arana ,  Michael Newman ,  Devendra Natekar

发明人： Leonel Arana ,  Michael Newman ,  Devendra Natekar

IPC分类号： H01L21/44

CPC分类号： H01L21/76898 ,  H01L21/2885 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/11 ,  H01L2224/11424 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13009 ,  H01L2224/13216 ,  H01L2224/13224 ,  H01L2224/13239 ,  H01L2224/13244 ,  H01L2224/13247 ,  H01L2224/13284 ,  H01L2224/13384 ,  H01L2224/13386 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01322 ,  H01L2924/12033 ,  H01L2924/14 ,  H01L2924/0105 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method, apparatus and system with an electrically conductive through hole via of a composite material with a matrix forming a continuous phase and embedded particles, with a different material property than the matrix, forming a dispersed phase, the resulting composite material having a different material property than the matrix.

摘要翻译： 一种具有导电通孔通孔的方法，装置和系统，其具有形成连续相的基质的复合材料的导电通孔，并且具有与基质不同的材料性质的嵌入的颗粒，形成分散相，所得复合材料具有不同的材料 属性比矩阵。