Invention Grant
US07528006B2 Integrated circuit die containing particle-filled through-silicon metal vias with reduced thermal expansion
有权
集成电路管芯包含具有减少的热膨胀的颗粒填充的通过硅的金属通孔
- Patent Title: Integrated circuit die containing particle-filled through-silicon metal vias with reduced thermal expansion
- Patent Title (中): 集成电路管芯包含具有减少的热膨胀的颗粒填充的通过硅的金属通孔
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Application No.: US11174125Application Date: 2005-06-30
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Publication No.: US07528006B2Publication Date: 2009-05-05
- Inventor: Leonel Arana , Michael Newman , Devendra Natekar
- Applicant: Leonel Arana , Michael Newman , Devendra Natekar
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Kenneth A. Nelson
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method, apparatus and system with an electrically conductive through hole via of a composite material with a matrix forming a continuous phase and embedded particles, with a different material property than the matrix, forming a dispersed phase, the resulting composite material having a different material property than the matrix.
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