公开(公告)号：US12094967B2

公开(公告)日：2024-09-17

申请号：US17805131

申请日：2022-06-02

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Gordon M. Grivna

IPC: H01L29/78 ,  H01L21/78 ,  H01L23/48 ,  H01L29/06 ,  H01L21/3065

CPC classification number: H01L29/781 ,  H01L21/78 ,  H01L23/481 ,  H01L29/0649 ,  H01L29/7813 ,  H01L21/30655 ,  H01L29/7811

Abstract: A semiconductor device includes a region of semiconductor material having a first side and a second side opposite to the first side. Active device structures are adjacent to the first side, the active device structures comprising source regions and gate electrodes. A first gate conductor is at the first side electrically connected to the gate electrodes, a drain region is at the second side, a second gate conductor is at the second side, and through-semiconductor vias extending from the first side towards the side and electrically connecting the first gate electrode to the second gate electrode. A source electrode is at the first side electrically connected to the source regions, and a drain electrode is at the second side electrically connected to the drain region. The through-semiconductor vias are electrically isolated from the source regions and the drain region. The structure provides a gate/drain up with a source-down configuration.

公开(公告)号：US11810954B2

公开(公告)日：2023-11-07

申请号：US18062152

申请日：2022-12-06

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Gordon M. Grivna

IPC: H01L29/165 ,  H01L21/285 ,  H01L29/06 ,  H01L49/02

CPC classification number: H01L29/165 ,  H01L21/28562 ,  H01L28/55 ,  H01L28/60 ,  H01L29/0688 ,  H01L28/40

Abstract: A semiconductor device includes a work piece comprising a first material, a first side, a second side opposite to the first side, and a first coefficient of thermal expansion (first CTE). Recesses extend into the work piece from the first side and includes a pattern. A second material having a second CTE is within the recesses and is over the first material between the recesses; and A third material having a third CTE is over one of the second side or the second material. The third CTE and the second CTE are different than the first CTE.

公开(公告)号：US11380788B2

公开(公告)日：2022-07-05

申请号：US16948880

申请日：2020-10-05

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Gordon M. Grivna

IPC: H01L29/78 ,  H01L21/78 ,  H01L29/06 ,  H01L23/48 ,  H01L21/3065

Abstract: A semiconductor device includes a region of semiconductor material having a first side and a second side opposite to the first side. Active device structures are adjacent to the first side, the active device structures comprising source regions and gate electrodes. A first gate conductor is at the first side electrically connected to the gate electrodes, a drain region is at the second side, a second gate conductor is at the second side, and through-semiconductor vias extending from the first side towards the side and electrically connecting the first gate electrode to the second gate electrode. A source electrode is at the first side electrically connected to the source regions, and a drain electrode is at the second side electrically connected to the drain region. The through-semiconductor vias are electrically isolated from the source regions and the drain region. The structure provides a gate/drain up with a source-down configuration.

公开(公告)号：US11367657B2

公开(公告)日：2022-06-21

申请号：US16661776

申请日：2019-10-23

Applicant: Semiconductor Components Industries, LLC

Inventor： Gordon M. Grivna

IPC: H01L21/78 ,  H01L29/778 ,  H01L23/00 ,  H01L29/66

Abstract: A process can be used to allow processing of thin layers of a workpiece including dies. The workpiece can include a base substrate and a plurality of layers overlying the base substrate. The process can include forming a polymer support layer over the plurality of layers; thinning or removing the base substrate within a component region of the workpiece, wherein the component region includes an electronic device; and singulating the workpiece into a plurality of dies after thinning or removing the base substrate. In another aspect, an electronic device can be formed using such process. In an embodiment, the workpiece may have a size corresponding to a semiconductor wafer to allow wafer-level, as opposed to die-level, processing.

公开(公告)号：US10950503B2

公开(公告)日：2021-03-16

申请号：US16535562

申请日：2019-08-08

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Gordon M. Grivna

IPC: H01L21/78 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065

Abstract: A method of singulating a wafer includes providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces, wherein the wafer has first and second opposing major surfaces, and wherein a layer of material is formed along the second major surface. The method includes placing the wafer onto a carrier substrate. The method includes singulating the wafer through the spaces to form singulation lines after the placing the wafer on the carrier substrate, wherein singulating comprises stopping in proximity to the layer of material. The method includes applying a pressure to the entire wafer thereby separating the layer of material in the singulation lines, wherein applying the pressure comprises using a fluid. The method provide a way to batch separate layers of material disposed on wafers after singulating the wafers.

公开(公告)号：US10784140B2

公开(公告)日：2020-09-22

申请号：US16664758

申请日：2019-10-25

Applicant: Semiconductor Components Industries, LLC

Inventor： Ali Salih ,  Gordon M. Grivna

IPC: H01L29/778 ,  H01L21/683 ,  H01L27/06 ,  H01L29/78 ,  H01L27/085 ,  H01L21/8258 ,  H01L21/304 ,  H01L21/306 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L29/40 ,  H01L29/417 ,  H01L29/16 ,  H01L29/20

Abstract: An electronic device can include a semiconductor material and a semiconductor layer overlying the semiconductor material, wherein the semiconductor layer has a greater bandgap energy as compared to the semiconductor material. The electronic device can include a component having a high electrical field region and a low electrical field region. Within the high electrical field region, the semiconductor material is not present. In another embodiment, the component may not be present. In another aspect, a process can include providing a substrate and a semiconductor layer overlying the substrate; removing a first portion of the substrate to define a first trench; forming a first insulating layer within the first trench; removing a second portion of the substrate adjacent to first insulating layer to define second trench; and forming a second insulating layer within the second trench.

公开(公告)号：US10727326B2

公开(公告)日：2020-07-28

申请号：US15884773

申请日：2018-01-31

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Meng-Chia Lee ,  Ralph N. Wall ,  Mingjiao Liu ,  Shamsul Arefin Khan ,  Gordon M. Grivna

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L29/08 ,  H01L29/40

Abstract: In a general aspect, an insulated gate bipolar transistor (IGBT) device can include an active region, an inactive region and a trench extending along a longitudinal axis in the active region. The IGBT can also include a first mesa defining a first sidewall of the trench and in parallel with the trench and a second mesa defining a second sidewall of the trench and in parallel with the trench. At least a portion of the first mesa can include an active segment of the IGBT device, and at least a portion of the second mesa can include an inactive segment of the IGBT device.

公开(公告)号：US10545055B2

公开(公告)日：2020-01-28

申请号：US15621093

申请日：2017-06-13

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Jaume Roig-Guitart ,  Herbert De Vleeschouwer ,  Gordon M. Grivna

IPC: G01K7/00 ,  G01K1/00 ,  G01K7/20 ,  G01K7/01 ,  H01L29/08 ,  G01K7/18 ,  H01L29/78 ,  H01L29/423 ,  H01L29/417 ,  G01K13/00

Abstract: An electronic device can include a temperature sensor. The temperature sensor can include a drain electrode including drain fingers spaced apart from the source fingers; a source electrode including source fingers spaced apart from the drain fingers; and a gate electrode including a runner, gate fingers and a conductive bridge. In an embodiment, the runner includes a first portion and a second portion spaced apart from the first portion, the gate fingers are coupled to the runner and each gate finger is disposed between a pair of the source and drain fingers. The conductive bridge connects at least two gate fingers, wherein the conductive bridge is along a conduction path between the first and second portions of the runner. Designs for the temperature sensor may provide a more accurate temperature measurement reflective of a transistor within the electronic device.

公开(公告)号：US10366923B2

公开(公告)日：2019-07-30

申请号：US15478839

申请日：2017-04-04

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Gordon M. Grivna

IPC: H01L21/67 ,  H01L21/304 ,  H01L21/78 ,  H01L21/683 ,  H01L23/544

Abstract: A method of singulating a wafer includes providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces. The wafer has first and second opposing major surfaces and a layer of material disposed along the second major surface. The method includes placing the wafer onto a carrier substrate and etching through the spaces to form singulation lines, wherein etching comprises stopping atop the layer of material. The method includes providing an apparatus comprising a compression structure, a support structure, and a transducer system configured to apply high frequency mechanical vibrations to the layer of material. The method includes placing the wafer and the carrier substrate onto the support structure, and, in one embodiment, applying pressure and mechanical vibrations to the wafer to separate the layer of material in the singulation lines.

公开(公告)号：US10211060B2

公开(公告)日：2019-02-19

申请号：US15358361

申请日：2016-11-22

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Michael Thomason ,  Mohammed Tanvir Quddus ,  James Morgan ,  Mihir Mudholkar ,  Scott Donaldson ,  Gordon M. Grivna

IPC: H01L21/02 ,  H01L29/872 ,  H01L21/285 ,  H01L21/324 ,  H01L21/768 ,  H01L29/40 ,  H01L29/47 ,  H01L29/66 ,  H01L21/3213

Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor layer in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The first layer may include a first metal and a second metal. A second layer may comprise a material constructed and arranged to scavenge semiconductor material migrating from the first semiconductor layer during annealing may be deposited over the first layer. The first semiconductor layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with the semiconductor material to form a Schottky barrier structure during the first annealing act.