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    Charged particle beam device
    1.
    发明授权
    Charged particle beam device 有权

    公开(公告)号：US11501950B2

    公开(公告)日：2022-11-15

    申请号：US17330500

    申请日：2021-05-26

    Applicant: Hitachi High-Tech Corporation

    Inventor： Yohei Minekawa ,  Kohei Chiba ,  Muneyuki Fukuda ,  Takanori Kishimoto

    IPC: H01J37/22 ,  H01J37/26 ,  H01J37/28

    Abstract: Provided is a technique capable of achieving both throughput and robustness for a function of adjusting brightness (B) and contrast (C) of a captured image in a charged particle beam device. The charged particle beam device includes a computer system having a function (ABCC function) of adjusting the B and the C of an image obtained by imaging a sample. The computer system determines whether adjustment is necessary based on a result obtained by evaluating a first image obtained by imaging an imaging target of the sample (step S2), executes, when the adjustment is necessary based on a result of the determination, the adjustment on a second image of the imaging target to set an adjusted B value and an adjusted C value (step S4), and captures a third image of the imaging target based on the adjusted setting values to generate an image for observation (step S5).

    Charged particle beam device
    2.
    发明授权
    Charged particle beam device 有权

    公开(公告)号：US11355308B2

    公开(公告)日：2022-06-07

    申请号：US16927925

    申请日：2020-07-13

    Applicant: Hitachi High-Tech Corporation

    Inventor： Yasuhiro Shirasaki ,  Natsuki Tsuno ,  Minami Shouji ,  Yohei Nakamura ,  Muneyuki Fukuda

    IPC: H01J37/22 ,  H01J37/244 ,  H01J37/28

    Abstract: A charged particle beam device includes an input and output device that receives, as inputs, a charged particle beam condition, a light condition, and electronic device circuit information, a charged particle beam control system that controls a charged particle beam applied to a sample based on the electron beam condition, a light control system that controls light applied to the sample based on the light condition, a detector that detects second electrons emitted from the sample by the application of the charged particle beam and the light and outputs a detection signal, and a calculator that generates a calculation netlist based on the electronic device circuit information, generates a light irradiation netlist based on the calculation netlist and the light condition, estimates a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and compares the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.

    Charged particle beam apparatus
    4.
    发明授权
    Charged particle beam apparatus 有权

    公开(公告)号：US10714304B2

    公开(公告)日：2020-07-14

    申请号：US16427698

    申请日：2019-05-31

    Applicant: Hitachi High-Tech Corporation

    Inventor： Muneyuki Fukuda ,  Yoshinori Momonoi ,  Akihiro Miura ,  Fumihiro Sasajima ,  Hiroaki Mito

    IPC: H01J37/22 ,  H01J37/21 ,  H01J37/28

    Abstract: A charged particle beam device is provided that performs proper beam adjustment while suppressing a decrease in MAM time, with a simple configuration without adding a lens, a sensor, or the like. The charged particle beam device includes: an optical element which adjusts a charged particle beam emitted from a charged particle source; an adjustment element which adjusts an incidence condition of the charged particle beam with respect to the optical element; and a control device which controls the adjustment element, wherein the control device determines a difference between a first feature amount indicating a state of the optical element based on the condition setting of the optical element, and a second feature amount indicating a state where the optical element reaches based on the condition setting and executes adjustment by the adjustment element when the difference is greater than or equal to a predetermined value.

    Charged particle beam apparatus
    6.
    发明授权
    Charged particle beam apparatus 有权

    公开(公告)号：US11211224B2

    公开(公告)日：2021-12-28

    申请号：US17049353

    申请日：2018-04-26

    Applicant: HITACHI HIGH-TECH CORPORATION

    Inventor： Nobuhiro Okai ,  Daisuke Bizen ,  Tomoyasu Shojo ,  Naomasa Suzuki ,  Muneyuki Fukuda

    IPC: H01J37/244 ,  H01J37/147 ,  H01J37/28 ,  H01J37/12

    Abstract: To improve detection efficiency of secondary particles without increasing a size of a charged particle beam apparatus, a charged particle beam apparatus according to the invention includes: a charged particle beam source configured to irradiate a sample with a primary particle beam; a scanning deflector configured to scan and deflect the primary particle beam to a desired position of the sample; and a detector configured to detect secondary particles emitted from the desired position. The charged particle beam apparatus further includes: a focusing lens electrode arranged coaxially with the primary particle beam and configured to generate a focusing electric field that is an electric field that focuses a trajectory of the secondary particles; and a mesh electrode configured to reduce leakage of the focusing electric field on a trajectory of the primary particle beam.

    System for deriving electrical characteristics and non-transitory computer-readable medium
    8.
    发明授权
    System for deriving electrical characteristics and non-transitory computer-readable medium 有权

    公开(公告)号：US11694325B2

    公开(公告)日：2023-07-04

    申请号：US16904309

    申请日：2020-06-17

    Applicant: Hitachi High-Tech Corporation

    Inventor： Heita Kimizuka ,  Yohei Nakamura ,  Natsuki Tsuno ,  Muneyuki Fukuda

    IPC: G06T7/00

    CPC classification number: G06T7/001 ,  G06T2207/10152 ,  G06T2207/30148

    Abstract: An object of the present disclosure is to provide a system for deriving a type of a defect of a semiconductor element and a non-transitory computer-readable medium. The system receives, from the image acquisition tool, image data obtained by sequentially irradiating a plurality of patterns provided on the semiconductor wafer with a beam and extracts characteristics of the plurality of patterns sequentially irradiated with a beam from the received image data, the characteristics being included in the image data, or receives characteristics of the plurality of patterns sequentially irradiated with a beam from the image acquisition tool, the characteristics being extracted from the image data (Step 603), and derives (Step 605) a type of a defect by referring to (Step 604) related information for the characteristics of the plurality of patterns, the related information storing the characteristics of the plurality of patterns and types of defects in association with each other.

    CHARGED PARTICLE BEAM APPARATUS
    9.
    发明申请
    CHARGED PARTICLE BEAM APPARATUS 有权

    公开(公告)号：US20220102109A1

    公开(公告)日：2022-03-31

    申请号：US17545944

    申请日：2021-12-08

    Applicant: Hitachi High-Tech Corporation

    Inventor： Takafumi Miwa ,  Yohei Nakamura ,  Natsuki Tsuno ,  Heita Kimizuka ,  Muneyuki Fukuda

    IPC: H01J37/24 ,  H01J37/244

    Abstract: A charged particle beam apparatus includes a database that stores a to-be-used-in-calculation device model for use in estimation of a circuit of a sample and an optical condition under which a charged particle beam is applied to the sample, a charged particle beam optical system that controls the beam applied to the sample under the optical condition, a detector that detects secondary electrons emitted from the sample excited by the application of the beam and outputs a detection signal based on the secondary electrons, and a computing unit that generates a to-be-used-in-computation netlist based on the to-be-used-in-calculation device model, estimates a first application result when the beam is applied to the sample based on the to-be-used-in-computation netlist and the optical condition, and compares the first application result with a second application result when the beam is applied to the sample based on the optical condition.

    CHARGED PARTICLE BEAM APPARATUS
    10.
    发明申请
    CHARGED PARTICLE BEAM APPARATUS 有权

    公开(公告)号：US20210043415A1

    公开(公告)日：2021-02-11

    申请号：US16920898

    申请日：2020-07-06

    Applicant: Hitachi High-Tech Corporation

    Inventor： Yohei Nakamura ,  Takafumi Miwa ,  Heita Kimizuka ,  Natsuki Tsuno ,  Muneyuki Fukuda

    IPC: H01J37/244 ,  H01J37/28 ,  G01N23/2251

    Abstract: Provided is a charged particle beam apparatus capable of estimating an internal device structure of a sample. The charged particle beam apparatus includes an electron beam optical system, a detector, and a calculator. The electron beam optical system irradiates a plurality of irradiation points on a sample, which are different in position or time, with an electron beam. The detector detects electrons emitted from the sample in response to irradiation of the electron beam by the electron beam optical system. The calculator calculates a dependence relationship between the irradiation points based on the electrons detected by the detector at the plurality of irradiation points.

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