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    Charged particle beam device
    2.
    发明授权
    Charged particle beam device 有权

    公开(公告)号：US11610754B2

    公开(公告)日：2023-03-21

    申请号：US17294468

    申请日：2018-12-06

    Applicant: Hitachi High-Tech Corporation

    Inventor： Katsura Takaguchi ,  Yohei Nakamura ,  Masahiro Sasajima ,  Toshihide Agemura ,  Natsuki Tsuno

    IPC: H01J37/22 ,  H01J37/244 ,  H01J37/28

    Abstract: An object of the invention is to provide a charged particle beam device capable of specifying an irradiation position of light on a sample when there is no mechanism for forming an image of backscattered electrons. The charged particle beam device according to the invention determines whether an irradiation position of a primary charged particle beam and an irradiation position of light match based on a difference between a first observation image acquired when the sample is irradiated with only the primary charged particle beam and a second observation image acquired when sample is irradiated with the light in addition to the primary charged particle beam. It is determined whether the irradiation position of the primary charged particle beam and the irradiation position of the light match using the first observation image and a measurement result by a light amount measuring device.

    CHARGED PARTICLE BEAM DEVICE
    3.
    发明申请
    CHARGED PARTICLE BEAM DEVICE 有权

    公开(公告)号：US20220139667A1

    公开(公告)日：2022-05-05

    申请号：US17435479

    申请日：2019-03-27

    Applicant: Hitachi High-Tech Corporation

    Inventor： Minami Shouji ,  Natsuki Tsuno ,  Hiroya Ohta ,  Daisuke Bizen

    IPC: H01J37/28 ,  H01J37/22 ,  H01J37/244 ,  H01J37/26

    Abstract: An object of the invention is to provide a charged particle beam device capable of increasing the contrast of an observation image of a sample as much as possible in accordance with light absorption characteristics that change for each optical parameter. The charged particle beam device according to the invention changes an optical parameter such as a polarization plane of light emitted to the sample, and generates the observation image having a contrast corresponding to the changed optical parameter. An optical parameter that maximizes a light absorption coefficient of the sample is specified according to a feature amount of a shape pattern of the sample (refer to FIG. 5).

    Charged particle beam apparatus and sample observation method using the same
    4.
    发明授权
    Charged particle beam apparatus and sample observation method using the same 有权

    公开(公告)号：US11183362B2

    公开(公告)日：2021-11-23

    申请号：US16765737

    申请日：2017-11-27

    Applicant: Hitachi High-Tech Corporation

    Inventor： Katsura Takaguchi ,  Natsuki Tsuno ,  Masahiro Sasajima ,  Toshihide Agemura

    IPC: H01J37/28 ,  H01J37/22 ,  H01J37/285

    Abstract: A charged particle beam apparatus includes: an electromagnetic wave generation source 16 that generates an electromagnetic wave with which a sample is irradiated; a charged particle optical system that includes a pulsing mechanism 3 and irradiates the sample with a focused charged particle beam; a detector 10 that detects an emitted electron emitted by an interaction between the charged particle beam and the sample; a first irradiation control unit 15 that controls the electromagnetic wave generation source and irradiates the sample with a pulsed electromagnetic wave to generate an excited carrier; a second irradiation control unit 14 that controls the pulsing mechanism and irradiates an electromagnetic wave irradiation region of the sample with a pulsed charged particle beam; and a timing control unit 13. While the emitted electrons are detected by the detector in synchronization with irradiation of the pulsed charged particle beam, the timing control unit controls the first irradiation control unit and the second irradiation control unit, and controls an interval time between the pulsed electromagnetic wave and the pulsed charged particle beam to the electromagnetic wave irradiation region. As a result, based on a transient change in an electron emission amount, it is possible to detect sample information with nano spatial resolution.

    Semiconductor inspection device and method for inspecting semiconductor sample
    6.
    发明授权
    Semiconductor inspection device and method for inspecting semiconductor sample 有权

    公开(公告)号：US12196802B2

    公开(公告)日：2025-01-14

    申请号：US18016882

    申请日：2020-09-29

    Applicant: Hitachi High-Tech Corporation

    Inventor： Yasuhiro Shirasaki ,  Natsuki Tsuno ,  Minami Shouji ,  Makoto Sakakibara ,  Satoshi Takada

    IPC: G01R31/265 ,  G01R31/26 ,  G01R31/28 ,  G01R31/307

    Abstract: A semiconductor inspection device 1 having a first measurement mode and a second measurement mode includes: an electron optical system configured to irradiate a sample with an electron beam; an optical system configured to irradiate the sample with light; an electron detector configured to detect a signal electron; a photodetector 29 configured to detect signal light; a control unit 11 configured to control the electron optical system and the optical system such that an electron beam and light are emitted under a first irradiation condition in the first measurement mode, and to control the electron optical system and the optical system such that an electron beam and light are emitted under a second irradiation condition in the second measurement mode; and a computer configured to process a detection signal from the electron detector or the photodetector.

    Charged particle beam device
    8.
    发明授权
    Charged particle beam device 有权

    公开(公告)号：US11355308B2

    公开(公告)日：2022-06-07

    申请号：US16927925

    申请日：2020-07-13

    Applicant: Hitachi High-Tech Corporation

    Inventor： Yasuhiro Shirasaki ,  Natsuki Tsuno ,  Minami Shouji ,  Yohei Nakamura ,  Muneyuki Fukuda

    IPC: H01J37/22 ,  H01J37/244 ,  H01J37/28

    Abstract: A charged particle beam device includes an input and output device that receives, as inputs, a charged particle beam condition, a light condition, and electronic device circuit information, a charged particle beam control system that controls a charged particle beam applied to a sample based on the electron beam condition, a light control system that controls light applied to the sample based on the light condition, a detector that detects second electrons emitted from the sample by the application of the charged particle beam and the light and outputs a detection signal, and a calculator that generates a calculation netlist based on the electronic device circuit information, generates a light irradiation netlist based on the calculation netlist and the light condition, estimates a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and compares the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.

    CHARGED PARTICLE BEAM DEVICE
    10.
    发明申请
    CHARGED PARTICLE BEAM DEVICE 有权

    公开(公告)号：US20220013326A1

    公开(公告)日：2022-01-13

    申请号：US17294468

    申请日：2018-12-06

    Applicant: Hitachi High-Tech Corporation

    Inventor： Katsura Takaguchi ,  Yohei Nakamura ,  Masahiro Sasajima ,  Toshihide Agemura ,  Natsuki Tsuno

    IPC: H01J37/22 ,  H01J37/244 ,  H01J37/28

    Abstract: An object of the invention is to provide a charged particle beam device capable of specifying an irradiation position of light on a sample when there is no mechanism for forming an image of backscattered electrons. The charged particle beam device according to the invention determines whether an irradiation position of a primary charged particle beam and an irradiation position of light match based on a difference between a first observation image acquired when the sample is irradiated with only the primary charged particle beam and a second observation image acquired when sample is irradiated with the light in addition to the primary charged particle beam. It is determined whether the irradiation position of the primary charged particle beam and the irradiation position of the light match using the first observation image and a measurement result by a light amount measuring device.

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