公开(公告)号：US11335535B2

公开(公告)日：2022-05-17

申请号：US16920898

申请日：2020-07-06

Applicant: Hitachi High-Tech Corporation

Inventor： Yohei Nakamura ,  Takafumi Miwa ,  Heita Kimizuka ,  Natsuki Tsuno ,  Muneyuki Fukuda

IPC: H01J37/244 ,  H01J37/28 ,  G01N23/2251

Abstract: Provided is a charged particle beam apparatus capable of estimating an internal device structure of a sample. The charged particle beam apparatus includes an electron beam optical system, a detector, and a calculator. The electron beam optical system irradiates a plurality of irradiation points on a sample, which are different in position or time, with an electron beam. The detector detects electrons emitted from the sample in response to irradiation of the electron beam by the electron beam optical system. The calculator calculates a dependence relationship between the irradiation points based on the electrons detected by the detector at the plurality of irradiation points.

公开(公告)号：US20220102108A1

公开(公告)日：2022-03-31

申请号：US17545936

申请日：2021-12-08

Applicant: Hitachi High-Tech Corporation

Inventor： Takafumi Miwa ,  Yohei Nakamura ,  Natsuki Tsuno ,  Heita Kimizuka ,  Muneyuki Fukuda

IPC: H01J37/22 ,  H01J37/244 ,  G01N23/2251

Abstract: A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.

公开(公告)号：US11043359B2

公开(公告)日：2021-06-22

申请号：US16920927

申请日：2020-07-06

Applicant: Hitachi High-Tech Corporation

Inventor： Yohei Nakamura ,  Natsuki Tsuno ,  Heita Kimizuka ,  Takafumi Miwa ,  Muneyuki Fukuda ,  Junichi Tanaka

IPC: H01J37/244 ,  H01J37/28 ,  H01J37/26

Abstract: Provided are a charged particle beam apparatus and a charged particle beam inspection system capable of estimating electrical characteristics of a sample including capacitance characteristics. The charged particle beam apparatus estimates electrical characteristics of the sample using the correspondence data representing the correspondence between the node of the netlist and the coordinate on the sample and the pulsing condition when the sample is irradiated with the charged particle beam in a pulsed manner. The charged particle beam optical system irradiates a predetermined coordinate on the sample with a charged particle beam based on a pulsing condition, and the detector actually measures an emission amount of electrons. The emission amount calculation unit calculates, for the node on the netlist corresponding to a predetermined coordinate, an emission amount of electrons according to a temporal change in a charged state accompanying the irradiation of the charged particle beam based on the pulsing condition. The comparator compares a measurement result by the detector with a calculation result by the emission amount calculation unit.

公开(公告)号：US20210043419A1

公开(公告)日：2021-02-11

申请号：US16920927

申请日：2020-07-06

Applicant: Hitachi High-Tech Corporation

Inventor： Yohei Nakamura ,  Natsuki Tsuno ,  Heita Kimizuka ,  Takafumi Miwa ,  Muneyuki Fukuda ,  Junichi Tanaka

IPC: H01J37/28 ,  H01J37/244 ,  H01J37/26

Abstract: Provided are a charged particle beam apparatus and a charged particle beam inspection system capable of estimating electrical characteristics of a sample including capacitance characteristics. The charged particle beam apparatus estimates electrical characteristics of the sample using the correspondence data representing the correspondence between the node of the netlist and the coordinate on the sample and the pulsing condition when the sample is irradiated with the charged particle beam in a pulsed manner. The charged particle beam optical system irradiates a predetermined coordinate on the sample with a charged particle beam based on a pulsing condition, and the detector actually measures an emission amount of electrons. The emission amount calculation unit calculates, for the node on the netlist corresponding to a predetermined coordinate, an emission amount of electrons according to a temporal change in a charged state accompanying the irradiation of the charged particle beam based on the pulsing condition. The comparator compares a measurement result by the detector with a calculation result by the emission amount calculation unit.

公开(公告)号：US11610754B2

公开(公告)日：2023-03-21

申请号：US17294468

申请日：2018-12-06

Applicant: Hitachi High-Tech Corporation

Inventor： Katsura Takaguchi ,  Yohei Nakamura ,  Masahiro Sasajima ,  Toshihide Agemura ,  Natsuki Tsuno

IPC: H01J37/22 ,  H01J37/244 ,  H01J37/28

Abstract: An object of the invention is to provide a charged particle beam device capable of specifying an irradiation position of light on a sample when there is no mechanism for forming an image of backscattered electrons. The charged particle beam device according to the invention determines whether an irradiation position of a primary charged particle beam and an irradiation position of light match based on a difference between a first observation image acquired when the sample is irradiated with only the primary charged particle beam and a second observation image acquired when sample is irradiated with the light in addition to the primary charged particle beam. It is determined whether the irradiation position of the primary charged particle beam and the irradiation position of the light match using the first observation image and a measurement result by a light amount measuring device.

公开(公告)号：US11355308B2

公开(公告)日：2022-06-07

申请号：US16927925

申请日：2020-07-13

Applicant: Hitachi High-Tech Corporation

Inventor： Yasuhiro Shirasaki ,  Natsuki Tsuno ,  Minami Shouji ,  Yohei Nakamura ,  Muneyuki Fukuda

IPC: H01J37/22 ,  H01J37/244 ,  H01J37/28

Abstract: A charged particle beam device includes an input and output device that receives, as inputs, a charged particle beam condition, a light condition, and electronic device circuit information, a charged particle beam control system that controls a charged particle beam applied to a sample based on the electron beam condition, a light control system that controls light applied to the sample based on the light condition, a detector that detects second electrons emitted from the sample by the application of the charged particle beam and the light and outputs a detection signal, and a calculator that generates a calculation netlist based on the electronic device circuit information, generates a light irradiation netlist based on the calculation netlist and the light condition, estimates a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and compares the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.

公开(公告)号：US20220013326A1

公开(公告)日：2022-01-13

申请号：US17294468

申请日：2018-12-06

Applicant: Hitachi High-Tech Corporation

Inventor： Katsura Takaguchi ,  Yohei Nakamura ,  Masahiro Sasajima ,  Toshihide Agemura ,  Natsuki Tsuno

IPC: H01J37/22 ,  H01J37/244 ,  H01J37/28

Abstract: An object of the invention is to provide a charged particle beam device capable of specifying an irradiation position of light on a sample when there is no mechanism for forming an image of backscattered electrons. The charged particle beam device according to the invention determines whether an irradiation position of a primary charged particle beam and an irradiation position of light match based on a difference between a first observation image acquired when the sample is irradiated with only the primary charged particle beam and a second observation image acquired when sample is irradiated with the light in addition to the primary charged particle beam. It is determined whether the irradiation position of the primary charged particle beam and the irradiation position of the light match using the first observation image and a measurement result by a light amount measuring device.

公开(公告)号：US11749494B2

公开(公告)日：2023-09-05

申请号：US17545936

申请日：2021-12-08

Applicant: Hitachi High-Tech Corporation

Inventor： Takafumi Miwa ,  Yohei Nakamura ,  Natsuki Tsuno ,  Heita Kimizuka ,  Muneyuki Fukuda

IPC: H01J37/22 ,  H01J37/244 ,  G01N23/2251

CPC classification number: H01J37/22 ,  G01N23/2251 ,  H01J37/244 ,  G01N2223/07 ,  G01N2223/507 ,  G01N2223/646 ,  H01J2237/2448 ,  H01J2237/2482

Abstract: A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.

公开(公告)号：US11646172B2

公开(公告)日：2023-05-09

申请号：US17545944

申请日：2021-12-08

Applicant: Hitachi High-Tech Corporation

Inventor： Takafumi Miwa ,  Yohei Nakamura ,  Natsuki Tsuno ,  Heita Kimizuka ,  Muneyuki Fukuda

IPC: H01J37/24 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/24 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24475 ,  H01J2237/2817

Abstract: A charged particle beam apparatus includes a database that stores a to-be-used-in-calculation device model for use in estimation of a circuit of a sample and an optical condition under which a charged particle beam is applied to the sample, a charged particle beam optical system that controls the beam applied to the sample under the optical condition, a detector that detects secondary electrons emitted from the sample excited by the application of the beam and outputs a detection signal based on the secondary electrons, and a computing unit that generates a to-be-used-in-computation netlist based on the to-be-used-in-calculation device model, estimates a first application result when the beam is applied to the sample based on the to-be-used-in-computation netlist and the optical condition, and compares the first application result with a second application result when the beam is applied to the sample based on the optical condition.

公开(公告)号：US11631568B2

公开(公告)日：2023-04-18

申请号：US17554216

申请日：2021-12-17

Applicant: Hitachi High-Tech Corporation

Inventor： Yasuhiro Shirasaki ,  Natsuki Tsuno ,  Minami Shouji ,  Yohei Nakamura ,  Muneyuki Fukuda

IPC: H01J37/22 ,  H01J37/244 ,  H01J37/28

Abstract: A method of detecting a defect in a device using a charged particle beam includes inputting a charged particle beam condition, a light condition, and electronic device circuit information, controlling a charged particle beam applied to a sample based on the electron beam condition, controlling light applied to the sample based on the light condition, detecting second electrons emitted from the sample by the application of the charged particle beam and the light, and generating a calculation netlist based on the electronic device circuit information, generating a light irradiation netlist based on the calculation netlist and the light condition, estimating a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and comparing the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.