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公开(公告)号:US12181513B2
公开(公告)日:2024-12-31
申请号:US18026718
申请日:2020-09-30
Applicant: Hitachi High-Tech Corporation
Inventor: Shota Mitsugi , Yohei Nakamura , Daisuke Bizen , Junichi Fuse , Satoshi Takada , Natsuki Tsuno
IPC: G01R31/26 , G01R31/265
Abstract: A control device controls a contact probe in synchronization with a pulse-controlled light having a predetermined wavelength, a measurement instrument measures a characteristic of a sample to be inspected or an analysis sample, and a circuit constant or a defect structure of the sample to be inspected is estimated based on a circuit model created by an electric characteristic analysis device configured to generate the circuit model based on a value measured by the measurement instrument and a detection signal of secondary electrons detected by the charged particle beam device.
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2.
公开(公告)号:US11011348B2
公开(公告)日:2021-05-18
申请号:US16474499
申请日:2017-01-17
Applicant: HITACHI HIGH-TECH CORPORATION
Inventor: Daisuke Bizen , Natsuki Tsuno , Takafumi Miwa , Makoto Sakakibara , Toshiyuki Yokosuka , Hideyuki Kazumi
Abstract: Provided is a scanning electron microscope. The scanning electron microscope is capable of removing a charge generated on a side wall of a deep hole or groove, and inspects and measures a bottom portion of the deep hole or groove with high accuracy. Therefore, in the scanning electron microscope that includes an electron source 201 that emits a primary electron, a sample stage 213 on which a sample is placed, a deflector 207 that causes the sample to be scanned with the primary electron, an objective lens 203 that focuses the primary electron on the sample, and a detector 206 that detects a secondary electron generated by irradiating the sample with the primary electron, a potential applied to the sample stage is controlled to have a negative polarity with respect to a potential applied to the objective lens during a first period in which the sample is irradiated with the primary electron, and the potential applied to the sample stage is controlled to have a positive polarity with respect to the potential applied to the objective lens during a second period in which the sample is not irradiated with the primary electron.
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公开(公告)号:US12191111B2
公开(公告)日:2025-01-07
申请号:US17594656
申请日:2019-05-08
Applicant: Hitachi High-Tech Corporation
Inventor: Fumiya Ishizaka , Daisuke Bizen , Makoto Suzuki
IPC: H01J37/28
Abstract: The present disclosure provides a technique enabling accurate ascertaining of a charged state of a resist pattern resulting from irradiation of a charged particle beam. The present disclosure provides a charged particle beam system provided with: a charged particle device provided with a charged particle source, deflectors for causing a primary charged particle beam emitted from the charged particle source to be scanned over a sample, an energy discriminator for performing energy discrimination for secondary electrons emitted when the primary charged particle beam has reached the sample, and a detector for detecting secondary electrons which have passed the energy discriminator; and a computer system for generating a scan image on the basis of signal amounts detected by the detector, which fluctuate during scanning of primary charged particles by the deflectors, and storing the scan image into an image storage unit. The computer system generates a scan image for each frame at the time of frame integration of the scan image, calculates an amount of static build-up in each frame on the basis of the output of the scan image of each frame, and outputs information on the amount of static build-up.
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公开(公告)号:US11610756B2
公开(公告)日:2023-03-21
申请号:US17497384
申请日:2021-10-08
Applicant: Hitachi High-Tech Corporation
Inventor: Kaori Bizen , Ryota Watanabe , Yuzuru Mizuhara , Daisuke Bizen
IPC: H01J37/24 , H01J37/147 , H01J37/244 , H01J37/22 , H01J37/28
Abstract: A charged particle beam apparatus acquires an image that is not affected by movement of a stage at a high speed. The apparatus includes: a charged particle source for irradiating a sample with a charged particle beam; a stage on which the sample is placed; a measurement unit for measuring a movement amount of the stage; a deflector; a deflector offset control unit, which is a feedback control unit for adjusting a deflection amount of the deflector according to the movement amount of the stage; a plurality of detectors for detecting secondary charged particles emitted from the sample by irradiation of the charged particle beam; a composition ratio calculation unit that calculates composition ratios of signals output from the detectors based on the deflection amount adjusted by the feedback control unit; and an image generation unit for generating a composite image by compositing the signals using the composition ratio.
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5.
公开(公告)号:US11164720B2
公开(公告)日:2021-11-02
申请号:US16747761
申请日:2020-01-21
Applicant: HITACHI HIGH-TECH CORPORATION
Inventor: Kenji Yasui , Mayuka Osaki , Makoto Suzuki , Hirohiko Kitsuki , Toshiyuki Yokosuka , Daisuke Bizen , Yusuke Abe
IPC: H01J37/28 , H01J37/244 , H01J37/20 , G01N23/2251
Abstract: To measure a depth of a three-dimensional structure, for example, a hole or a groove, formed in a sample without preparing information in advance, an electron microscope detects, among emitted electrons generated by irradiating a sample with a primary electron beam, an emission angle in a predetermined range, the emission angle being formed between an axial direction of the primary electron beam and an emission direction of the emitted electrons, and outputs a detection signal corresponding to the number of the emitted electrons detected. An emission angle distribution of a detection signal is obtained based on a plurality of detection signals, and an opening angle is obtained based on a change point of the emission angle distribution, the opening angle being based on an optical axis direction of the primary electron beam with respect to the bottom portion of the three-dimensional structure.
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公开(公告)号:US11869745B2
公开(公告)日:2024-01-09
申请号:US17435479
申请日:2019-03-27
Applicant: Hitachi High-Tech Corporation
Inventor: Minami Shouji , Natsuki Tsuno , Hiroya Ohta , Daisuke Bizen
IPC: H01J37/28 , H01J37/22 , H01J37/244 , H01J37/26
CPC classification number: H01J37/28 , H01J37/222 , H01J37/224 , H01J37/226 , H01J37/244 , H01J37/265 , H01J2237/2448 , H01J2237/2817
Abstract: An object of the invention is to provide a charged particle beam device capable of increasing the contrast of an observation image of a sample as much as possible in accordance with light absorption characteristics that change for each optical parameter. The charged particle beam device according to the invention changes an optical parameter such as a polarization plane of light emitted to the sample, and generates the observation image having a contrast corresponding to the changed optical parameter. An optical parameter that maximizes a light absorption coefficient of the sample is specified according to a feature amount of a shape pattern of the sample (refer to FIG. 5).
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公开(公告)号:US11211226B2
公开(公告)日:2021-12-28
申请号:US16810969
申请日:2020-03-06
Applicant: Hitachi High-Tech Corporation
Inventor: Toshiyuki Yokosuka , Hirohiko Kitsuki , Daisuke Bizen , Makoto Suzuki , Yusuke Abe , Kenji Yasui , Mayuka Osaki , Hideyuki Kazumi
IPC: H01J37/28 , H01J37/22 , H01J37/244
Abstract: The present disclosure provides a pattern cross-sectional shape estimation system which includes a charged particle ray device which includes a scanning deflector that scans a charged particle beam, a detector that detects charged particles, and an angle discriminator that is disposed in a front stage of the detector and discriminates charged particles to be detected, and an arithmetic device that generates a luminance of an image, and calculates a signal waveform of a designated region on the image using the luminance. The arithmetic device generates angle discrimination images using signal electrons at different detection angles, and estimates a side wall shape of a measurement target pattern.
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公开(公告)号:US11456150B2
公开(公告)日:2022-09-27
申请号:US17210805
申请日:2021-03-24
Applicant: Hitachi High-Tech Corporation
Inventor: Kaori Bizen , Yuzuru Mizuhara , Minoru Yamazaki , Daisuke Bizen , Noritsugu Takahashi
IPC: H01J37/244 , H01J37/28 , H01J37/22
Abstract: A charged particle beam device capable of generating an image having uniform image quality in a field of view is provided. The charged particle beam device includes: a beam source configured to irradiate a sample with a charged particle beam; a diaphragm including an opening used for angle discrimination of secondary charged particles emitted from the sample; a first detector provided closer to the sample than the diaphragm, and configured to detect a part of the secondary charged particles; a second detector provided closer to the beam source than the diaphragm, and configured to detect secondary charged particles passing through the opening; an image generation unit configured to generate an image based on a first signal output from the first detector or a second signal output from the second detector; and a composite ratio calculation unit configured to calculate a composite ratio for each position in a field of view based on the first signal or the second signal with respect to a calibration sample that is a sample having a flat surface. The image generation unit generates a composite image by synthesizing the first signal and the second signal with respect to an observation sample using the composite ratio.
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公开(公告)号:US20220139667A1
公开(公告)日:2022-05-05
申请号:US17435479
申请日:2019-03-27
Applicant: Hitachi High-Tech Corporation
Inventor: Minami Shouji , Natsuki Tsuno , Hiroya Ohta , Daisuke Bizen
IPC: H01J37/28 , H01J37/22 , H01J37/244 , H01J37/26
Abstract: An object of the invention is to provide a charged particle beam device capable of increasing the contrast of an observation image of a sample as much as possible in accordance with light absorption characteristics that change for each optical parameter. The charged particle beam device according to the invention changes an optical parameter such as a polarization plane of light emitted to the sample, and generates the observation image having a contrast corresponding to the changed optical parameter. An optical parameter that maximizes a light absorption coefficient of the sample is specified according to a feature amount of a shape pattern of the sample (refer to FIG. 5).
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公开(公告)号:US11211224B2
公开(公告)日:2021-12-28
申请号:US17049353
申请日:2018-04-26
Applicant: HITACHI HIGH-TECH CORPORATION
Inventor: Nobuhiro Okai , Daisuke Bizen , Tomoyasu Shojo , Naomasa Suzuki , Muneyuki Fukuda
IPC: H01J37/244 , H01J37/147 , H01J37/28 , H01J37/12
Abstract: To improve detection efficiency of secondary particles without increasing a size of a charged particle beam apparatus, a charged particle beam apparatus according to the invention includes: a charged particle beam source configured to irradiate a sample with a primary particle beam; a scanning deflector configured to scan and deflect the primary particle beam to a desired position of the sample; and a detector configured to detect secondary particles emitted from the desired position. The charged particle beam apparatus further includes: a focusing lens electrode arranged coaxially with the primary particle beam and configured to generate a focusing electric field that is an electric field that focuses a trajectory of the secondary particles; and a mesh electrode configured to reduce leakage of the focusing electric field on a trajectory of the primary particle beam.
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