公开(公告)号：US10923334B2

公开(公告)日：2021-02-16

申请号：US16403489

申请日：2019-05-03

申请人： Applied Materials, Inc.

发明人： Satya Thokachichu ,  Edward P. Hammond, IV ,  Viren Kalsekar ,  Zheng John Ye ,  Sarah Michelle Bobek ,  Abdul Aziz Khaja ,  Vinay K. Prabhakar ,  Venkata Sharat Chandra Parimi ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee

IPC分类号： H01J37/32 ,  H01L21/683 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02 ,  H01L21/285

摘要： One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.

公开(公告)号：US11569072B2

公开(公告)日：2023-01-31

申请号：US16391996

申请日：2019-04-23

申请人： Applied Materials, Inc.

发明人： Satya Thokachichu ,  Edward P. Hammond, IV ,  Viren Kalsekar ,  Zheng John Ye ,  Abdul Aziz Khaja ,  Vinay K. Prabhakar

IPC分类号： H01J37/32 ,  H01L21/683 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02 ,  H01L21/285

摘要： Embodiments of the present disclosure generally relate to substrate supports for process chambers and RF grounding configurations for use therewith. Methods of grounding RF current are also described. A chamber body at least partially defines a process volume therein. A first electrode is disposed in the process volume. A pedestal is disposed opposite the first electrode. A second electrode is disposed in the pedestal. An RF filter is coupled to the second electrode through a conductive rod. The RF filter includes a first capacitor coupled to the conductive rod and to ground. The RF filter also includes a first inductor coupled to a feedthrough box. The feedthrough box includes a second capacitor and a second inductor coupled in series. A direct current (DC) power supply for the second electrode is coupled between the second capacitor and the second inductor.