公开(公告)号：US11456173B2

公开(公告)日：2022-09-27

申请号：US16797111

申请日：2020-02-21

Applicant: Applied Materials, Inc.

Inventor： Meenakshi Gupta ,  Rui Cheng ,  Srinivas Guggilla ,  Karthik Janakiraman ,  Diwakar N. Kedlaya ,  Zubin Huang

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/32

Abstract: Embodiments for processing a substrate are provided and include a method of trimming photoresist to provide photoresist profiles with smooth sidewall surfaces and to tune critical dimensions (CD) for the patterned features and/or a subsequently deposited dielectric layer. The method can include depositing a sacrificial structure layer on the substrate, depositing a photoresist on the sacrificial structure layer, and patterning the photoresist to produce a crude photoresist profile on the sacrificial structure layer. The method also includes trimming the photoresist with a plasma to produce a refined photoresist profile covering a first portion of the sacrificial structure layer while a second portion of the sacrificial structure layer is exposed, etching the second portion of the sacrificial structure layer to form patterned features disposed on the substrate, and depositing a dielectric layer on the patterned features.

公开(公告)号：US11009455B2

公开(公告)日：2021-05-18

申请号：US16460309

申请日：2019-07-02

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Sarah Langlois White ,  Jonathan Robert Bakke ,  Diwakar N. Kedlaya ,  Juan Carlos Rocha ,  Fang Ruan

IPC: G01N21/3504 ,  G01N21/33 ,  C23C16/52 ,  H01L21/67 ,  C23C16/448 ,  H01L21/02

Abstract: Systems and methods used to deliver a processing gas having a desired diborane concentration to a processing volume of a processing chamber are provided herein. In one embodiment a system includes a borane concentration sensor. The borane concentration sensor includes a body and a plurality of windows. Here, individual ones of the plurality of windows are disposed at opposite ends of the body and the body and the plurality of windows collectively define a cell volume. The borane concentration sensor further includes a radiation source disposed outside of the cell volume proximate to a first window of the plurality of windows, and a radiation detector disposed outside the cell volume proximate to a second window of the plurality of windows.

公开(公告)号：US10373823B2

公开(公告)日：2019-08-06

申请号：US15994409

申请日：2018-05-31

Applicant: Applied Materials, Inc.

Inventor： Swaminathan T. Srinivasan ,  Atashi Basu ,  Pramit Manna ,  Khokan C. Paul ,  Diwakar N. Kedlaya

IPC: C23C16/24 ,  C23C16/56 ,  H01L21/3105 ,  C23C16/30 ,  H01L21/67 ,  H01L21/677 ,  H01L21/02 ,  H01L21/321

Abstract: In an embodiment, a method includes depositing a silicon matrix on a substrate; exposing the silicon matrix to a first wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber; exposing the silicon matrix to a second wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the second wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range; exposing the silicon matrix to a third wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the third wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range and second wavelength or wavelength range; and a repeat exposure of any wavelength range. In some embodiments, a healing operation comprising a deposition operation, a reactive cure, a thermal cure, or a combination thereof may be performed.

公开(公告)号：US11598004B2

公开(公告)日：2023-03-07

申请号：US16802284

申请日：2020-02-26

Applicant: Applied Materials, Inc.

Inventor： Hanish Kumar Panavalappil Kumarankutty ,  Prashant A. Desai ,  Diwakar N. Kedlaya ,  Sumit Agarwal ,  Vidyadharan Srinivasa Murthy Bangalore ,  Truong Nguyen ,  Zubin Huang

IPC: C23C16/40 ,  C23C16/455

Abstract: The present disclosure relates to a lid assembly apparatus and related methods for substrate processing chambers. In one implementation, a lid assembly includes a gas manifold. The gas manifold includes a first gas channel configured to receive a process gas, a second gas channel configured to receive a doping gas, and a third gas channel configured to receive a cleaning gas. The lid assembly also includes a showerhead. The showerhead includes one or more first gas openings that are configured to receive the process gas, and one or more second gas openings that are configured to receive the doping gas.

公开(公告)号：US10537965B2

公开(公告)日：2020-01-21

申请号：US14172422

申请日：2014-02-04

Applicant: Applied Materials, Inc.

Inventor： Douglas E. Holmgren ,  Samuel C. Howells ,  Aaron Muir Hunter ,  Theodore P. Moffitt ,  Diwakar N. Kedlaya

IPC: B23K26/06 ,  H01L21/67

Abstract: Embodiments described herein relate to the rapid thermal processing of substrates. A fiber coupled laser diode array is provided in an optical system configured to generate a uniform irradiance pattern on the surface of a substrate. A plurality of individually controllable laser diodes are optically coupled via a plurality of fibers to one or more lenses. The fiber coupled laser diode array generates a Gaussian radiation profile which is defocused by the lenses to generate a uniform intensity image. In one embodiment, a field stop is disposed within the optical system.

公开(公告)号：US11830706B2

公开(公告)日：2023-11-28

申请号：US16703140

申请日：2019-12-04

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Zubin Huang ,  Jian Li ,  Satish Radhakrishnan ,  Rui Cheng ,  Diwakar N. Kedlaya ,  Juan Carlos Rocha-Alvarez ,  Umesh M. Kelkar ,  Karthik Janakiraman ,  Sarah Michelle Bobek ,  Prashant Kumar Kulshreshtha ,  Vinay K. Prabhakar ,  Byung Seok Kwon

IPC: H01L21/67 ,  H05B3/10 ,  H01J37/32 ,  C23C16/458 ,  C23C16/50 ,  C23C16/46 ,  H05B3/14

CPC classification number: H01J37/32724 ,  C23C16/4583 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/50 ,  H01J37/32715 ,  H01L21/67103 ,  H05B3/10 ,  H05B3/143 ,  H01J2237/2007 ,  H01J2237/3321

Abstract: Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.

公开(公告)号：US11443919B2

公开(公告)日：2022-09-13

申请号：US16785331

申请日：2020-02-07

Applicant: Applied Materials, Inc.

Inventor： Krishna Nittala ,  Diwakar N. Kedlaya ,  Karthik Janakiraman ,  Yi Yang ,  Rui Cheng

IPC: H01L21/02 ,  C23C16/515 ,  H01J37/32 ,  C23C16/505

Abstract: Systems and methods of using pulsed RF plasma to form amorphous and microcrystalline films are discussed herein. Methods of forming films can include (a) forming a plasma in a process chamber from a film precursor and (b) pulsing an RF power source to cause a duty cycle on time (TON) of a duty cycle of a pulse generated by the RF power source to be less than about 20% of a total cycle time (TTOT) of the duty cycle to form the film. The methods can further include (c) depositing a first film interlayer on a substrate in the process chamber; (d) subsequent to (c), purging the process chamber; and (e) subsequent to (d), introducing a hydrogen plasma to the process chamber. Further in the method, (b)-(e) are repeated to form a film. The film can have an in-film hydrogen content of less than about 10%.

公开(公告)号：US10256005B2

公开(公告)日：2019-04-09

申请号：US15213844

申请日：2016-07-19

Applicant: Applied Materials, Inc.

Inventor： Joseph M. Ranish ,  Shashank Sharma ,  Diwakar N. Kedlaya ,  Aaron Muir Hunter

IPC: G21K5/10 ,  B23K26/12 ,  H01L21/67

Abstract: Embodiments of the present disclosure relate to thermal processing of substrates. More specifically, embodiments described herein relate to flash on spike annealing processes and apparatus suitable for performing such processes. In one embodiment, a thermal processing apparatus may include a lamp radiation source, a laser source, and a reflector plate disposed between the lamp radiation source and the laser source. One or more apertures may be formed in the reflector plate and the laser source may be positioned adjacent to the reflector plate such that a laser beam emitted from the laser source propagates through the one or more apertures. In one embodiment, the reflector plate may be substantially circular and the one or more apertures may approximate a sector of the reflector plate.