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    3D NAND GATE STACK REINFORCEMENT
    3.
    发明申请
    3D NAND GATE STACK REINFORCEMENT 有权

    公开(公告)号：US20210143058A1

    公开(公告)日：2021-05-13

    申请号：US17089221

    申请日：2020-11-04

    Applicant: Applied Materials, Inc.

    Inventor： Praket Prakash Jha ,  Shuchi Sunil Ojha ,  Jingmei Liang ,  Abhijit Basu Mallik ,  Shankar Venkataraman

    IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/311 ,  H01L21/3213

    Abstract: Exemplary methods of forming a semiconductor structure may include forming a first silicon oxide layer overlying a semiconductor substrate. The methods may include forming a first silicon layer overlying the first silicon oxide layer. The methods may include forming a silicon nitride layer overlying the first silicon layer. The methods may include forming a second silicon layer overlying the silicon nitride layer. The methods may include forming a second silicon oxide layer overlying the second silicon layer. The methods may include removing the silicon nitride layer. The methods may include removing the first silicon layer and the second silicon layer. The methods may include forming a metal layer between and contacting each of the first silicon oxide layer and the second silicon oxide layer.

    OPTICAL EMISSION SPECTROSCOPY (OES) FOR REMOTE PLASMA MONITORING
    5.
    发明申请
    OPTICAL EMISSION SPECTROSCOPY (OES) FOR REMOTE PLASMA MONITORING 审中-公开

    公开(公告)号：US20190259580A1

    公开(公告)日：2019-08-22

    申请号：US16400615

    申请日：2019-05-01

    Applicant: Applied Materials, Inc.

    Inventor： Tae Seung Cho ,  Soonam Park ,  Junghoon Kim ,  Dmitry Lubomirsky ,  Shankar Venkataraman

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/311 ,  G01J3/02 ,  G01N21/73 ,  G01J3/443

    Abstract: Methods and systems for etching substrates using a remote plasma are described. Remotely excited etchants are formed in a remote plasma and flowed through a showerhead into a substrate processing region to etch the substrate. Optical emission spectra are acquired from the substrate processing region just above the substrate. The optical emission spectra may be used to determine an endpoint of the etch, determine the etch rate or otherwise characterize the etch process. A weak plasma may be present in the substrate processing region. The weak plasma may have much lower intensity than the remote plasma. In cases where no bias plasma is used above the substrate in an etch process, a weak plasma may be ignited near a viewport disposed near the side of the substrate processing region to characterize the etchants.

    Semiconductor processing systems having multiple plasma configurations
    6.
    发明授权
    Semiconductor processing systems having multiple plasma configurations 有权

    公开(公告)号：US10256079B2

    公开(公告)日：2019-04-09

    申请号：US13791074

    申请日：2013-03-08

    Applicant: Applied Materials, Inc.

    Inventor： Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

    IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/3213 ,  C23C16/54 ,  C23C16/455 ,  C23C16/505 ,  H01L21/67

    Abstract: An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.

    HIGH TEMPERATURE CHUCK FOR PLASMA PROCESSING SYSTEMS
    8.
    发明申请
    HIGH TEMPERATURE CHUCK FOR PLASMA PROCESSING SYSTEMS 审中-公开

    公开(公告)号：US20170309509A1

    公开(公告)日：2017-10-26

    申请号：US15642977

    申请日：2017-07-06

    Applicant: Applied Materials, Inc.

    Inventor： Toan Q. Tran ,  Sultan Malik ,  Dmitry Lubomirsky ,  Shambhu N. Roy ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Shankar Venkataraman

    IPC: H01L21/683 ,  H01L21/67 ,  H01L21/3065

    CPC classification number: H01L21/6833 ,  H01L21/3065 ,  H01L21/67103

    Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

    ENHANCED ETCHING PROCESSES USING REMOTE PLASMA SOURCES
    10.
    发明申请
    ENHANCED ETCHING PROCESSES USING REMOTE PLASMA SOURCES 有权
    使用远程等离子体源的增强蚀刻工艺

    公开(公告)号：US20160284556A1

    公开(公告)日：2016-09-29

    申请号：US15173824

    申请日：2016-06-06

    Applicant: Applied Materials, Inc.

    Inventor： Nitin K. Ingle ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Shankar Venkataraman

    IPC: H01L21/3065 ,  H01J37/32

    Abstract: Methods of etching a patterned substrate may include flowing an oxygen-containing precursor into a first remote plasma region fluidly coupled with a substrate processing region. The oxygen-containing precursor may be flowed into the region while forming a plasma in the first remote plasma region to produce oxygen-containing plasma effluents. The methods may also include flowing a fluorine-containing precursor into a second remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the second remote plasma region to produce fluorine-containing plasma effluents. The methods may include flowing the oxygen-containing plasma effluents and fluorine-containing plasma effluents into the processing region, and using the effluents to etch a patterned substrate housed in the substrate processing region.

    Abstract translation: 蚀刻图案化衬底的方法可以包括使含氧前体流入与衬底处理区流体耦合的第一远程等离子体区域。 可以在第一远程等离子体区域中形成等离子体的同时将含氧前体流入该区域以产生含氧等离子体流出物。 所述方法还可以包括使含氟前体流入与基板处理区流体耦合的第二远程等离子体区域，同时在第二远程等离子体区域中形成等离子体以产生含氟等离子体流出物。 所述方法可以包括将含氧等离子体流出物和含氟等离子体流出物流入处理区域，并且使用流出物蚀刻容纳在基板处理区域中的图案化基板。

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