公开(公告)号：US20160225651A1

公开(公告)日：2016-08-04

申请号：US14612472

申请日：2015-02-03

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Sultan Malik ,  Dmitry Lubomirsky ,  Shambhu N. Roy ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Shankar Venkataraman

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/6833 ,  H01L21/3065 ,  H01L21/67103

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

Abstract translation: 晶片卡盘组件包括圆盘，轴和基座。 绝缘材料限定了圆盘的顶表面，加热元件嵌入绝缘材料内，导电板位于绝缘材料的下方。 轴包括与板连接的壳体，以及用于加热器元件和电极的电连接器。 导电基座壳体与轴壳体耦合，并且连接器穿过基座壳体内的端子块。 等离子体处理的方法包括将工件加载到具有绝缘顶表面的卡盘上，在顶表面内的两个电极之间提供直流电压差，通过使电流通过加热器元件来加热卡盘，在围绕卡盘的腔室中提供工艺气体 并且在卡盘下方的导电板与腔室的一个或多个壁之间提供RF电压。

公开(公告)号：US20180144959A1

公开(公告)日：2018-05-24

申请号：US15360412

申请日：2016-11-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Srinivas D. Nemani ,  Gautam Pisharody ,  Seshadri Ramaswami ,  Shambhu N. Roy ,  Niranjan Kumar

IPC: H01L21/67 ,  H01L21/683 ,  G01R29/12

CPC classification number: H01L21/67288 ,  G01R29/12 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/6838

Abstract: An electrostatic chucking force tool is described that may be used on workpiece carriers for micromechanical and semiconductor processing. One example includes a workpiece fitting to hold a workpiece when gripped by an electrostatic chucking force by an electrostatic chuck, an arm coupled to the workpiece fitting to pull the workpiece through the workpiece fitting laterally across the chuck, and a force gauge coupled to the arm to measure an amount of force with which the workpiece fitting is pulled by the arm in order to move the workpiece.

公开(公告)号：US09728437B2

公开(公告)日：2017-08-08

申请号：US14612472

申请日：2015-02-03

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Sultan Malik ,  Dmitry Lubomirsky ,  Shambhu N. Roy ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Shankar Venkataraman

IPC: H01L21/683 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01L21/3065 ,  H01L21/67103

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

公开(公告)号：US09484202B1

公开(公告)日：2016-11-01

申请号：US14729932

申请日：2015-06-03

Applicant: Applied Materials, Inc.

Inventor： Jie Zhou ,  Chentsau Ying ,  Shambhu N. Roy ,  Srinivas D. Nemani ,  Jingjing Liu ,  Ellie Y. Yieh

IPC: H01L21/302 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/311 ,  H01L21/0337

Abstract: Embodiments herein provide apparatus and methods for performing a deposition and a patterning process on a spacer layer with good profile control in multiple patterning processes. In one embodiment, a method for depositing and patterning a spacer layer during a multiple patterning process includes conformally forming a spacer layer on an outer surface of a patterned structure disposed on a substrate, wherein the patterned structure has a first group of openings defined therebetween, selectively treating a first portion of the spacer layer formed on the substrate without treating a second portion of the spacer layer, and selectively removing the treated first portion of the spacer layer.

Abstract translation: 本文的实施例提供了用于在多个图案化工艺中对具有良好轮廓控制的间隔层执行沉积和图案化工艺的装置和方法。 在一个实施例中，在多次图案化工艺期间用于沉积和图案化间隔层的方法包括在设置在衬底上的图案化结构的外表面上共形形成间隔层，其中图案化结构具有限定在其间的第一组开口， 选择性地处理形成在衬底上的间隔层的第一部分，而不处理间隔层的第二部分，并且选择性地去除间隔层的经处理的第一部分。

公开(公告)号：US20180025931A1

公开(公告)日：2018-01-25

申请号：US15217328

申请日：2016-07-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Srinivas D. Nemani ,  Shambhu N. Roy ,  Gautam Pisharody ,  Douglas A. Buchberger, JR. ,  Ellie Y. Yieh ,  Zhong Qiang Hua

IPC: H01L21/683 ,  C23C16/513

CPC classification number: H01L21/6833 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/513

Abstract: A processed wafer is described that may be used as a workpiece carrier in semiconductor and mechanical processing. In some examples, the workpiece carrier includes a substrate, an electrode formed on the substrate to carry an electric charge to grip a workpiece, a through hole through the substrate and connected to the electrode, and a dielectric layer over the substrate to isolate the electrode from the workpiece.

公开(公告)号：US20170309509A1

公开(公告)日：2017-10-26

申请号：US15642977

申请日：2017-07-06

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Sultan Malik ,  Dmitry Lubomirsky ,  Shambhu N. Roy ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Shankar Venkataraman

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/6833 ,  H01L21/3065 ,  H01L21/67103

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

公开(公告)号：US09382625B2

公开(公告)日：2016-07-05

申请号：US14267865

申请日：2014-05-01

Applicant: Applied Materials, Inc.

Inventor： Jun Xue ,  Jingjing Liu ,  Yongmei Chen ,  Ludovic Godet ,  Chentsau Ying ,  Shambhu N. Roy

IPC: C23C16/56 ,  C23C16/27 ,  C23C16/46 ,  C23C16/455 ,  C23C16/505

CPC classification number: C23C16/56 ,  C23C16/27 ,  C23C16/272 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/45557 ,  C23C16/46 ,  C23C16/505

Abstract: Methods for making a nanocrystalline diamond layer are disclosed herein. A method of forming a layer can include activating a deposition gas comprising an alkane and a hydrogen containing gas at a first pressure, delivering the activated deposition gas to the substrate at a second pressure which is less than the first pressure, forming a nanocrystalline diamond layer, treating the layer with an activated hydrogen containing gas to remove one or more polymers from the surface and repeating the cycle to achieve a desired thickness.

Abstract translation: 本文公开了制备纳米晶体金刚石层的方法。 形成层的方法可以包括在第一压力下激活包括烷烃和含氢气体的沉积气体，在小于第一压力的第二压力下将活化的沉积气体输送到衬底，形成纳米晶体金刚石层 用活化的含氢气体处理层以从表面去除一种或多种聚合物并重复该循环以达到所需的厚度。

公开(公告)号：US10468285B2

公开(公告)日：2019-11-05

申请号：US15642977

申请日：2017-07-06

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Sultan Malik ,  Dmitry Lubomirsky ,  Shambhu N. Roy ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Shankar Venkataraman

IPC: H01L21/683 ,  H01L21/3065 ,  H01L21/67

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

公开(公告)号：US20180122679A1

公开(公告)日：2018-05-03

申请号：US15337973

申请日：2016-10-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Shambhu N. Roy ,  Gautam Pisharody ,  Seshadri Ramaswami ,  Srinivas D. Nemani ,  Zhong Qiang Hua ,  Douglas A. Buchberger, JR. ,  Niranjan Kumar ,  Ellie Y. Yieh

IPC: H01L21/683 ,  H01L21/67

CPC classification number: H01L21/67248 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6835 ,  H01L21/68785 ,  H01L2021/6006 ,  H01L2221/68304

Abstract: A substrate carrier with contacts is described that is balanced for thermal stress. In one example workpiece carrier has a rigid substrate configured to support a workpiece to be carried for processing, a first dielectric layer over the substrate, an electrostatic conductive electrode over the first dielectric layer to electrostatically hold the workpiece to be carried, a second dielectric layer over the electrode to electrically isolate the workpiece from the electrode, and a third dielectric layer under the substrate to counter thermal stress applied to the substrate by the first and second dielectric layers.

公开(公告)号：US20180033673A1

公开(公告)日：2018-02-01

申请号：US15657190

申请日：2017-07-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Srinivas D. Nemani ,  Shambhu N. Roy ,  Sultan Malik ,  Viachslav Babayan

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/68735 ,  H01L21/02274 ,  H01L21/67098 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68785

Abstract: Embodiments of methods and apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a base having a first support surface designed to support a substrate having a given width; a plurality of arcuate slots formed through the base; a corresponding plurality of lift pins disposed through the arcuate slots, wherein the lift pins are rotationally and vertically movable with respect to the base; and a cover plate disposed on but not coupled to the base to cover the first support surface, wherein the cover plate has a diameter greater than the given width, and wherein the cover plate includes a second support surface designed to support a substrate having the given width.