Invention Grant
- Patent Title: High temperature chuck for plasma processing systems
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Application No.: US14612472Application Date: 2015-02-03
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Publication No.: US09728437B2Publication Date: 2017-08-08
- Inventor: Toan Q. Tran , Sultan Malik , Dmitry Lubomirsky , Shambhu N. Roy , Satoru Kobayashi , Tae Seung Cho , Soonam Park , Shankar Venkataraman
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L21/3065 ; H01L21/67

Abstract:
A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.
Public/Granted literature
- US20160225651A1 HIGH TEMPERATURE CHUCK FOR PLASMA PROCESSING SYSTEMS Public/Granted day:2016-08-04
Information query
IPC分类: