公开(公告)号：US10675581B2

公开(公告)日：2020-06-09

申请号：US16055929

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Adib Khan ,  Qiwei Liang ,  Sultan Malik ,  Srinivas Nemani ,  Rafika Smati ,  Joseph Ng ,  John O'Hehir

IPC: H01L21/673 ,  B01D53/047 ,  B01D53/04 ,  H01L21/67

Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.

公开(公告)号：US12198951B2

公开(公告)日：2025-01-14

申请号：US15917365

申请日：2018-03-09

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Adib Khan ,  Venkata Ravishankar Kasibhotla ,  Sultan Malik ,  Sean S. Kang ,  Keith Tatseun Wong

IPC: H01L21/67 ,  C23C16/52 ,  H01L21/324 ,  H01L21/687 ,  H01L21/768

Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.

公开(公告)号：US11408075B2

公开(公告)日：2022-08-09

申请号：US16164392

申请日：2018-10-18

Applicant: Applied Materials, Inc.

Inventor： Adib Khan ,  Shankar Venkataraman ,  Jay D. Pinson, II ,  Jang-Gyoo Yang ,  Nitin Krishnarao Ingle ,  Qiwei Liang

IPC: C23C16/56 ,  C23C16/44 ,  C23C16/46 ,  C23C16/455 ,  H01L21/687 ,  H01L21/67 ,  H01L21/677 ,  H01L21/02

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

公开(公告)号：US10113236B2

公开(公告)日：2018-10-30

申请号：US14577828

申请日：2014-12-19

Applicant: Applied Materials, Inc.

Inventor： Adib Khan ,  Shankar Venkataraman ,  Jay D. Pinson, II ,  Jang-Gyoo Yang ,  Nitin Krishnarao Ingle ,  Qiwei Liang

IPC: C23C16/56 ,  C23C16/46 ,  C23C16/455 ,  H01L21/677 ,  H01L21/02 ,  C23C16/44 ,  H01L21/67 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

公开(公告)号：US11110383B2

公开(公告)日：2021-09-07

申请号：US16897045

申请日：2020-06-09

Applicant: Applied Materials, Inc.

Inventor： Adib Khan ,  Qiwei Liang ,  Sultan Malik ,  Srinivas Nemani ,  Rafika Smati ,  Joseph Ng ,  John O'Hehir

IPC: B01D53/04 ,  H01L21/67 ,  H01L21/673

Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.

公开(公告)号：US11066747B2

公开(公告)日：2021-07-20

申请号：US15468758

申请日：2017-03-24

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Adib Khan ,  Tobin Kaufman-Osborn ,  Srinivas D. Nemani ,  Ludovic Godet

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/448 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  B05D1/00 ,  B05D1/18

Abstract: Implementations described herein relate to apparatus and methods for self-assembled monolayer (SAM) deposition. Apparatus described herein includes processing chambers having various vapor phase delivery apparatus fluidly coupled thereto. SAM precursors may be delivered to process volumes of the chambers via various apparatus which is heated to maintain the precursors in vapor phase. In one implementation, a first ampoule or vaporizer configured to deliver a SAM precursor may be fluidly coupled to the process volume of a process chamber. A second ampoule or vaporizer configured to deliver a material different from the SAM precursor may also be fluidly coupled to the process volume of the process chamber.

公开(公告)号：US10947621B2

公开(公告)日：2021-03-16

申请号：US16126760

申请日：2018-09-10

Applicant: Applied Materials, Inc.

Inventor： Adib Khan ,  Qiwei Liang ,  Srinivas D. Nemani ,  Tobin Kaufman-Osborn

IPC: C23C16/455 ,  C23C16/448 ,  C23C16/44 ,  C07F15/00

Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In some embodiments, the apparatus includes a gas inlet line having an inlet valve; a gas outlet line having an outlet valve; a gas flow controller arranged to control the flow through the inlet valve; an orifice contained within at least one of the gas outlet line, the outlet valve, a chemical ampoule outlet valve, or outlet isolation valve; a chemical ampoule fluidly coupled to at least one of the gas inlet line and the gas outlet line; and a processing chamber. In some embodiments, the apparatus further includes a check valve, one or more orifices, and/or a heated divert line.

公开(公告)号：US10550472B2

公开(公告)日：2020-02-04

申请号：US14481774

申请日：2014-09-09

Applicant: Applied Materials, Inc.

Inventor： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/452

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

公开(公告)号：US12203171B2

公开(公告)日：2025-01-21

申请号：US17861750

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Adib Khan ,  Shankar Venkataraman ,  Jay D. Pinson, II ,  Jang-Gyoo Yang ,  Nitin K. Ingle ,  Qiwei Liang

IPC: C23C16/56 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

公开(公告)号：US11725274B2

公开(公告)日：2023-08-15

申请号：US16433064

申请日：2019-06-06

Applicant: Applied Materials, Inc.

Inventor： Tobin Kaufman-Osborn ,  Srinivas D. Nemani ,  Ludovic Godet ,  Qiwei Liang ,  Adib Khan

IPC: C23C16/02 ,  C23C16/04 ,  H01L21/67 ,  H01L21/687 ,  C23C16/455 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02 ,  H01J37/32 ,  H01L21/677 ,  H01L21/8234

CPC classification number: C23C16/042 ,  C23C16/02 ,  C23C16/45502 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/54 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32899 ,  H01L21/0228 ,  H01L21/02263 ,  H01L21/02299 ,  H01L21/02304 ,  H01L21/6719 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/67754 ,  H01L21/68785 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/823431

Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.