公开(公告)号：USD946534S1

公开(公告)日：2022-03-22

申请号：US29710770

申请日：2019-10-25

Applicant: Applied Materials, Inc.

Designer： Adam Fischbach ,  Kien N. Chuc ,  Canfeng Lai ,  Carlaton Wong

公开(公告)号：US10240234B2

公开(公告)日：2019-03-26

申请号：US15489306

申请日：2017-04-17

Applicant: Applied Materials, Inc.

Inventor： Dale R. Du Bois ,  Kien N. Chuc ,  Karthik Janakiraman

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/44 ,  H01L21/02

Abstract: Implementations described herein generally relate to a method and apparatus for depositing material on a substrate. In one implementation, a processing chamber for processing a substrate includes a chamber body and a substrate support disposed within the chamber body and adapted to support the substrate thereon. The processing chamber includes a plurality of gas inlets positioned above the substrate support to direct a process gas above the substrate support. A movable diffuser is pivotally mounted adjacent the substrate support via a pivoting mount. The movable diffuser includes a deposition head having a plurality of inlet openings for directing process gas toward the substrate support and a plurality of exhaust openings for providing an exhaust to process gas disposed above the substrate support by the movable diffuser.

公开(公告)号：US10113231B2

公开(公告)日：2018-10-30

申请号：US15138209

申请日：2016-04-25

Applicant: Applied Materials, Inc.

Inventor： Dale R. Dubois ,  Kalyanjit Ghosh ,  Kien N. Chuc ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Yanjie Wang ,  Sungjin Kim

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/44

Abstract: A process chamber is provided including a sidewall, a substrate support having an outer ledge, and a gas inlet beneath the substrate support. The process chamber further includes a first liner disposed around a bottom surface of the outer ledge of the substrate support. The first liner has an inner surface separated from the outer ledge of the substrate support by a first gap. The process chamber further includes a flow isolator ring having an inner bottom surface disposed on the outer ledge of the substrate support and an outer bottom surface extending outwardly relative to the inner bottom surface, the outer bottom surface overlying the first gap.

公开(公告)号：US10017855B2

公开(公告)日：2018-07-10

申请号：US14975133

申请日：2015-12-18

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Kien N. Chuc ,  Sungjin Kim ,  Yanjie Wang

IPC: H01L21/00 ,  C23C16/44 ,  H01J37/32

CPC classification number: C23C16/4412 ,  C23C16/4401 ,  H01J37/32477

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

公开(公告)号：US10711347B2

公开(公告)日：2020-07-14

申请号：US15486548

申请日：2017-04-13

Applicant: Applied Materials, Inc.

Inventor： Dale R. DuBois ,  Karthik Janakiraman ,  Kien N. Chuc

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/44 ,  C23C16/458

Abstract: Processing chambers having a lid with a lower surface, a substrate support with an upper surface facing the lid and an inner baffle ring between the substrate support and the lid are described. Methods of using the processing chamber are described.

公开(公告)号：US09144147B2

公开(公告)日：2015-09-22

申请号：US13773067

申请日：2013-02-21

Applicant: Applied Materials, Inc.

Inventor： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H05H1/24 ,  C23C16/455

CPC classification number: H05H1/24 ,  C23C16/45565 ,  C23C16/45585 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32724 ,  H01L21/02274

Abstract: Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

Abstract translation: 描述了具有位于处理室内的电容耦合等离子体（CCP）单元的衬底处理系统。 CCP单元可以包括形成在第一电极和第二电极之间的等离子体激发区域。 第一电极可以包括允许第一气体进入等离子体激发区域的第一多个开口，并且第二电极可以包括允许活化气体离开等离子体激发区域的第二多个开口。 该系统还可以包括用于将第一气体供应到CCP单元的第一电极的气体入口和可操作以支撑衬底的基座。 基座位于气体反应区域的下方，活性气体从CCP单元行进。

公开(公告)号：US11270905B2

公开(公告)日：2022-03-08

申请号：US16913969

申请日：2020-06-26

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Edward L. Haywood ,  Samuel E. Gottheim ,  Pramit Manna ,  Kien N. Chuc ,  Adam Fischbach ,  Abhijit B. Mallick ,  Timothy J. Franklin

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/3213 ,  H01J37/32

Abstract: Embodiments of the present disclosure generally relate to a substrate processing chamber, and components thereof, for forming semiconductor devices. The processing chamber comprises a substrate support, and an edge ring is disposed around the substrate support. The edge ring comprises a material selected from the group consisting of quartz, silicon, cross-linked polystyrene and divinylbenzene, polyether ether ketone, Al2O3, and AlN. The material of the edge ring is selected to modulate the properties of hardmask films deposited on substrates in the processing chamber. As such, hardmask films having desired film properties can be deposited in the processing chamber without scaling up the RF power to the chamber.

公开(公告)号：US10550472B2

公开(公告)日：2020-02-04

申请号：US14481774

申请日：2014-09-09

Applicant: Applied Materials, Inc.

Inventor： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/452

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

公开(公告)号：US12146219B2

公开(公告)日：2024-11-19

申请号：US16745141

申请日：2020-01-16

Applicant: Applied Materials, Inc.

Inventor： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib M. Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

IPC: C23C16/455 ,  C23C16/452 ,  H01J37/32

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

公开(公告)号：US11512391B2

公开(公告)日：2022-11-29

申请号：US16912417

申请日：2020-06-25

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Kien N. Chuc ,  Sungjin Kim ,  Yanjie Wang

IPC: C23C16/44 ,  H01J37/32

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.