公开(公告)号：US10236182B2

公开(公告)日：2019-03-19

申请号：US15432605

申请日：2017-02-14

Applicant: Applied Materials, Inc.

Inventor： Sungjin Kim ,  Deenesh Padhi ,  Sung Hyun Hong ,  Bok Hoen Kim ,  Derek R. Witty

IPC: B23P15/00 ,  C03C25/00 ,  C23F1/00 ,  H01L21/311 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/02

Abstract: A method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber is provided. The method generally includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a nitrogen-doped amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the nitrogen-doped amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the nitrogen-doped amorphous carbon layer, and removing the patterned features from the substrate.

公开(公告)号：US11512391B2

公开(公告)日：2022-11-29

申请号：US16912417

申请日：2020-06-25

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Kien N. Chuc ,  Sungjin Kim ,  Yanjie Wang

IPC: C23C16/44 ,  H01J37/32

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

公开(公告)号：US10724138B2

公开(公告)日：2020-07-28

申请号：US15992330

申请日：2018-05-30

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Kien N. Chuc ,  Sungjin Kim ,  Yanjie Wang

IPC: C23C16/44 ,  H01J37/32

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

公开(公告)号：US10113231B2

公开(公告)日：2018-10-30

申请号：US15138209

申请日：2016-04-25

Applicant: Applied Materials, Inc.

Inventor： Dale R. Dubois ,  Kalyanjit Ghosh ,  Kien N. Chuc ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Yanjie Wang ,  Sungjin Kim

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/44

Abstract: A process chamber is provided including a sidewall, a substrate support having an outer ledge, and a gas inlet beneath the substrate support. The process chamber further includes a first liner disposed around a bottom surface of the outer ledge of the substrate support. The first liner has an inner surface separated from the outer ledge of the substrate support by a first gap. The process chamber further includes a flow isolator ring having an inner bottom surface disposed on the outer ledge of the substrate support and an outer bottom surface extending outwardly relative to the inner bottom surface, the outer bottom surface overlying the first gap.

公开(公告)号：US10017855B2

公开(公告)日：2018-07-10

申请号：US14975133

申请日：2015-12-18

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Kien N. Chuc ,  Sungjin Kim ,  Yanjie Wang

IPC: H01L21/00 ,  C23C16/44 ,  H01J37/32

CPC classification number: C23C16/4412 ,  C23C16/4401 ,  H01J37/32477

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

公开(公告)号：US09570303B2

公开(公告)日：2017-02-14

申请号：US14736848

申请日：2015-06-11

Applicant: Applied Materials, Inc.

Inventor： Sungjin Kim ,  Deenesh Padhi ,  Sung Hyun Hong ,  Bok Hoen Kim ,  Derek R. Witty

IPC: H01L21/302 ,  H01L21/461 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  B44C1/22 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/0337 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

Abstract: A method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber is provided. The method generally includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a nitrogen-doped amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the nitrogen-doped amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the nitrogen-doped amorphous carbon layer, and removing the patterned features from the substrate.

Abstract translation: 提供了一种在处理室中的衬底上形成氮掺杂非晶碳层的方法。 该方法通常包括在衬底上沉积预定厚度的牺牲电介质层，通过去除牺牲介电层的部分以暴露衬底的上表面，在衬底上形成图案化特征，共形地沉积氮掺杂的预定厚度 在图案化特征上的无定形碳层和衬底的暴露的上表面，使用各向异性蚀刻工艺从图案化特征的上表面和衬底的上表面选择性地去除氮掺杂非晶碳层，以提供图案化特征 填充在由氮掺杂非晶碳层形成的侧壁间隔物内，并且从衬底去除图案化特征。

公开(公告)号：US20140349490A1

公开(公告)日：2014-11-27

申请号：US14371989

申请日：2013-01-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Sungjin Kim ,  Deenesh Padhi ,  Sung Hyun Hong ,  Bok Hoen Kim ,  Derek R. Witty

IPC: H01L21/033

CPC classification number: H01L21/0337 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139

Abstract: A method of forming a nitrogen-doped amorphous carbon layer on a substrate in a processing chamber is provided. The method generally includes depositing a predetermined thickness of a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, depositing conformally a predetermined thickness of a nitrogen-doped amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the nitrogen-doped amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the nitrogen-doped amorphous carbon layer, and removing the patterned features from the substrate.

Abstract translation: 提供了一种在处理室中的衬底上形成氮掺杂非晶碳层的方法。 该方法通常包括在衬底上沉积预定厚度的牺牲电介质层，通过去除牺牲介电层的部分以暴露衬底的上表面，在衬底上形成图案化特征，共形地沉积氮掺杂的预定厚度 在图案化特征上的无定形碳层和衬底的暴露的上表面，使用各向异性蚀刻工艺从图案化特征的上表面和衬底的上表面选择性地去除氮掺杂非晶碳层，以提供图案化特征 填充在由氮掺杂非晶碳层形成的侧壁间隔物内，并且从衬底去除图案化特征。