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公开(公告)号：US12014928B2
公开(公告)日：2024-06-18
申请号：US17250503
申请日：2019-07-31
发明人： Xiaolan Ba , Ruopeng Deng , Juwen Gao , Sanjay Gopinath , Lawrence Schloss
IPC分类号： H01L21/285 , C23C10/04 , C23C16/04 , C23C16/14 , C23C16/455 , H01L21/768 , H01L23/532 , H10B41/27 , H10B43/27
CPC分类号： H01L21/28568 , C23C16/045 , C23C16/14 , C23C16/45527 , C23C16/45544 , H01L21/76805 , H01L21/76895 , H01L23/53209 , H01L23/53242 , H01L23/53257 , H10B41/27 , H10B43/27
摘要： Described herein are methods and apparatuses for filling semiconductor substrate structures with conductive material. The methods involve depositing multi-layer bulk metal films in structures with one or more deposition conditions changed when transitioning from layer-to-layer. The methods result in high fill quality, high throughput, low precursor consumption, and low roughness. Multi-station chambers to perform the methods are also provided.
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公开(公告)号：US20240249949A1
公开(公告)日：2024-07-25
申请号：US18559958
申请日：2022-05-19
IPC分类号： H01L21/285 , C23C16/06 , H01J37/32 , H01L21/768 , H10B41/27 , H10B43/27
CPC分类号： H01L21/28562 , C23C16/06 , H01J37/32449 , H01L21/76879 , H10B41/27 , H10B43/27
摘要： Methods of filling wordline features of 3D NAND structures with tungsten include treating a conformal tungsten with nitrogen trifluoride (NF3). The NF3 treatment is preferential to the openings of the wordline features relative to the interiors of the wordline features. The treatment etches tungsten and inhibits subsequent deposition on the treated surfaces. Subsequent deposition is selective to the interior of the wordline features allowing non-conformal, inside-out deposition. The NF3 may be delivered from a gas zone that is isolated from tungsten deposition gases. The NF3 may be delivered from a charge volume to facilitate top-to-bottom uniform treatment of a 3D NAND structure. Apparatuses for filling wordline features include separate gas zones.
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公开(公告)号：US20240136192A1
公开(公告)日：2024-04-25
申请号：US18547481
申请日：2022-02-18
发明人： Lawrence Schloss , Joshua Collins , Griffin John Kennedy , Hanna Bamnolker , Sang-Hyeob Lee , Patrick van Cleemput , Sanjay Gopinath
IPC分类号： H01L21/285 , C23C16/02 , C23C16/14 , C23C16/455 , C23C16/46 , C23C16/52
CPC分类号： H01L21/28568 , C23C16/02 , C23C16/14 , C23C16/45527 , C23C16/45544 , C23C16/46 , C23C16/52
摘要： Provided herein are low resistance metallization stack structures for 3D-NAND applications and related methods of fabrication. In some embodiments, thin metal oxynitride nucleation layers are deposited on dielectric material followed by deposition of a pure metal conductor using process conditions that increase non-molybdenum component element content at the oxynitride-dielectric interface. Certain embodiments of the methods described below convert less than all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.
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公开(公告)号：US11348795B2
公开(公告)日：2022-05-31
申请号：US16638430
申请日：2018-08-10
发明人： Lawrence Schloss , Raashina Humayun , Sanjay Gopinath , Juwen Gao , Michal Danek , Kaihan Abidi Ashtiani
IPC分类号： C23C16/14 , H01L21/285 , C23C16/16 , C23C16/455 , H01L21/768 , H01L27/11556 , H01L27/11582
摘要： Disclosed are methods of depositing a transition metal such as tungsten on a semiconductor substrate. The method includes providing a gas mixture of diborane with a balance of hydrogen, where the hydrogen serves to stabilize the diborane in the gas mixture. The method further includes delivering the gas mixture to the semiconductor substrate to form a boron layer, where the boron layer serves as a reducing agent layer to convert a metal-containing precursor to metal, such as a tungsten-containing precursor to tungsten. In some implementations, the semiconductor substrate includes a vertical structure, such as a three-dimensional vertical NAND structure, with horizontal features or wordlines having openings in sidewalls of the vertical structure, where the boron layer may be conformally deposited in the horizontal features of the vertical structure.
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公开(公告)号：US20210313183A1
公开(公告)日：2021-10-07
申请号：US17250503
申请日：2019-07-31
发明人： Xiaolan Ba , Ruopeng Deng , Juwen Gao , Sanjay Gopinath , Lawrence Schloss
IPC分类号： H01L21/285 , H01L21/768 , C23C16/455 , C23C16/14 , C23C16/04
摘要： Described herein are methods and apparatuses for filling semiconductor substrate structures with conductive material. The methods involve depositing multi-layer bulk metal films in structures with one or more deposition conditions changed when transitioning from layer-to-layer. The methods result in high fill quality, high throughput, low precursor consumption, and low roughness. Multi-station chambers to perform the methods are also provided.
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公开(公告)号：US20220262640A1
公开(公告)日：2022-08-18
申请号：US17662220
申请日：2022-05-05
发明人： Adam Jandl , Sema Ermez , Lawrence Schloss , Sanjay Gopinath , Michal Danek , Siew Neo , Joshua Collins , Hanna Bamnolker
IPC分类号： H01L21/285 , H01L21/768
摘要： Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.
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公开(公告)号：US10573522B2
公开(公告)日：2020-02-25
申请号：US15673320
申请日：2017-08-09
发明人： Adam Jandl , Sema Ermez , Lawrence Schloss , Sanjay Gopinath , Michal Danek , Siew Neo , Joshua Collins , Hanna Bamnolker
IPC分类号： H01L21/285 , H01L21/768 , H01L27/108
摘要： Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into V-shaped features.
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公开(公告)号：US10546751B2
公开(公告)日：2020-01-28
申请号：US15958662
申请日：2018-04-20
发明人： Hanna Bamnolker , Joshua Collins , Tomas Sadilek , Hyeong Seop Shin , Xiaolan Ba , Raashina Humayun , Michal Danek , Lawrence Schloss
IPC分类号： H01L21/285 , H01L21/768 , C23C16/52 , C23C16/458 , C23C16/455 , C23C16/02 , C23C16/04 , C23C16/14 , H01L27/11582
摘要： Methods of depositing fluorine-free tungsten by sequential CVD pulses, such as by alternately pulsing a fluorine-free tungsten precursor and hydrogen in cycles of temporally separated pulses, are provided. Some methods involve depositing fluorine-free tungsten by sequential CVD without depositing a tungsten nucleation layer. Methods also include depositing tungsten directly on a substrate surface using alternating pulses of a chlorine-containing tungsten precursor and hydrogen without treating the substrate surface. Methods also include depositing a tungsten layer using a reducing agent and fluorine-free tungsten-containing precursor and depositing bulk tungsten in sequential CVD cycles of alternating pulses of hydrogen and a tungsten-containing precursor.
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公开(公告)号：US09978605B2
公开(公告)日：2018-05-22
申请号：US15398462
申请日：2017-01-04
发明人： Hanna Bamnolker , Joshua Collins , Tomas Sadilek , Hyeong Seop Shin , Xiaolan Ba , Raashina Humayun , Michal Danek , Lawrence Schloss
IPC分类号： H01L21/285 , H01L27/115 , H01L21/768 , C23C16/52 , C23C16/458 , C23C16/455 , C23C16/02 , C23C16/04 , C23C16/14 , H01L27/11582
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/455 , C23C16/45523 , C23C16/458 , C23C16/52 , H01L21/28562 , H01L21/28568 , H01L21/76876 , H01L21/76877 , H01L27/11582 , H01L28/00
摘要： Provided herein are methods of depositing fluorine-free tungsten by sequential CVD pulses, such as by alternately pulsing a chlorine-containing tungsten precursor and hydrogen in cycles of temporally separated pulses, without depositing a tungsten nucleation layer. Methods also include depositing tungsten directly on a substrate surface using alternating pulses of a chlorine-containing tungsten precursor and hydrogen without treating the substrate surface.
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公开(公告)号：US09613818B2
公开(公告)日：2017-04-04
申请号：US14723270
申请日：2015-05-27
发明人： Xiaolan Ba , Raashina Humayun , Michal Danek , Lawrence Schloss
IPC分类号： H01L21/285 , H01L21/768 , C23C16/52 , C23C16/458 , C23C16/455
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/455 , C23C16/45523 , C23C16/458 , C23C16/52 , H01L21/28562 , H01L21/76876 , H01L21/76877
摘要： Provided herein are methods of depositing bulk tungsten by sequential CVD pulses, such as by alternately pulsing tungsten hexafluoride and hydrogen gas in cycles of temporally separated pulses. Some methods include depositing a tungsten nucleation layer at low pressure followed by deposition of bulk tungsten by sequential CVD to form low stress tungsten films with low fluorine content. Methods described herein may also be performed in combination with non-sequential CVD deposition and fluorine-free tungsten deposition techniques.
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