公开(公告)号：US20180240675A1

公开(公告)日：2018-08-23

申请号：US15958662

申请日：2018-04-20

申请人： Lam Research Corporation

发明人： Hanna Bamnolker ,  Joshua Collins ,  Tomas Sadilek ,  Hyeong Seop Shin ,  Xiaolan Ba ,  Raashina Humayun ,  Michal Danek ,  Lawrence Schloss

IPC分类号： H01L21/285 ,  C23C16/52 ,  H01L21/768 ,  C23C16/458 ,  C23C16/455 ,  C23C16/04 ,  C23C16/02 ,  C23C16/14 ,  H01L27/11582

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/458 ,  C23C16/52 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76876 ,  H01L21/76877 ,  H01L27/11582 ,  H01L28/00

摘要： Methods of depositing fluorine-free tungsten by sequential CVD pulses, such as by alternately pulsing a fluorine-free tungsten precursor and hydrogen in cycles of temporally separated pulses, are provided. Some methods involve depositing fluorine-free tungsten by sequential CVD without depositing a tungsten nucleation layer. Methods also include depositing tungsten directly on a substrate surface using alternating pulses of a chlorine-containing tungsten precursor and hydrogen without treating the substrate surface. Methods also include depositing a tungsten layer using a reducing agent and fluorine-free tungsten-containing precursor and depositing bulk tungsten in sequential CVD cycles of alternating pulses of hydrogen and a tungsten-containing precursor.

公开(公告)号：US20170117155A1

公开(公告)日：2017-04-27

申请号：US15398462

申请日：2017-01-04

申请人： Lam Research Corporation

发明人： Hanna Bamnolker ,  Joshua Collins ,  Tomas Sadilek ,  Hyeong Seop Shin ,  Xiaolan Ba ,  Raashina Humayun ,  Michal Danek ,  Lawrence Schloss

IPC分类号： H01L21/285 ,  C23C16/455 ,  C23C16/458 ,  H01L21/768 ,  C23C16/52

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/458 ,  C23C16/52 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76876 ,  H01L21/76877 ,  H01L27/11582 ,  H01L28/00

摘要： Provided herein are methods of depositing fluorine-free tungsten by sequential CVD pulses, such as by alternately pulsing a chlorine-containing tungsten precursor and hydrogen in cycles of temporally separated pulses, without depositing a tungsten nucleation layer. Methods also include depositing tungsten directly on a substrate surface using alternating pulses of a chlorine-containing tungsten precursor and hydrogen without treating the substrate surface.

公开(公告)号：US10546751B2

公开(公告)日：2020-01-28

申请号：US15958662

申请日：2018-04-20

申请人： Lam Research Corporation

发明人： Hanna Bamnolker ,  Joshua Collins ,  Tomas Sadilek ,  Hyeong Seop Shin ,  Xiaolan Ba ,  Raashina Humayun ,  Michal Danek ,  Lawrence Schloss

IPC分类号： H01L21/285 ,  H01L21/768 ,  C23C16/52 ,  C23C16/458 ,  C23C16/455 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  H01L27/11582

摘要： Methods of depositing fluorine-free tungsten by sequential CVD pulses, such as by alternately pulsing a fluorine-free tungsten precursor and hydrogen in cycles of temporally separated pulses, are provided. Some methods involve depositing fluorine-free tungsten by sequential CVD without depositing a tungsten nucleation layer. Methods also include depositing tungsten directly on a substrate surface using alternating pulses of a chlorine-containing tungsten precursor and hydrogen without treating the substrate surface. Methods also include depositing a tungsten layer using a reducing agent and fluorine-free tungsten-containing precursor and depositing bulk tungsten in sequential CVD cycles of alternating pulses of hydrogen and a tungsten-containing precursor.

公开(公告)号：US09978605B2

公开(公告)日：2018-05-22

申请号：US15398462

申请日：2017-01-04

申请人： Lam Research Corporation

发明人： Hanna Bamnolker ,  Joshua Collins ,  Tomas Sadilek ,  Hyeong Seop Shin ,  Xiaolan Ba ,  Raashina Humayun ,  Michal Danek ,  Lawrence Schloss

IPC分类号： H01L21/285 ,  H01L27/115 ,  H01L21/768 ,  C23C16/52 ,  C23C16/458 ,  C23C16/455 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  H01L27/11582

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/458 ,  C23C16/52 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76876 ,  H01L21/76877 ,  H01L27/11582 ,  H01L28/00

摘要： Provided herein are methods of depositing fluorine-free tungsten by sequential CVD pulses, such as by alternately pulsing a chlorine-containing tungsten precursor and hydrogen in cycles of temporally separated pulses, without depositing a tungsten nucleation layer. Methods also include depositing tungsten directly on a substrate surface using alternating pulses of a chlorine-containing tungsten precursor and hydrogen without treating the substrate surface.