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公开(公告)号：US20200075403A1
公开(公告)日：2020-03-05
申请号：US16676169
申请日：2019-11-06
发明人： Shruti Vivek Thombare , Raashina Humayun , Michal Danek , Chiukin Steven Lai , Joshua Collins , Hanna Bamnolker , Griffin John Kennedy , Gorun Butail , Patrick A. van Cleemput
IPC分类号： H01L21/768 , H01L21/285 , H01L23/522
摘要： Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some implementations, the methods involve providing a tungsten (W)-containing layer on a substrate; and depositing a molybdenum (Mo)-containing layer on the W-containing layer. In some implementations, the methods involve depositing a Mo-containing layer directly on a dielectric or titanium nitride (TiN) substrate without an intervening W-containing layer.
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公开(公告)号：US20190185992A1
公开(公告)日：2019-06-20
申请号：US16284517
申请日：2019-02-25
发明人： Joshua Collins , Siew Neo , Hanna Bamnolker , Kapil Umesh Sawlani
IPC分类号： C23C16/02 , C23C16/455 , C23C16/04 , C23C16/14
CPC分类号： C23C16/0272 , C23C16/045 , C23C16/14 , C23C16/45527
摘要： A method for depositing tungsten includes arranging a substrate including a titanium nitride layer in a substrate processing chamber and performing multi-stage atomic layer deposition of tungsten on the substrate using a precursor gas includes tungsten chloride (WCIx) gas, wherein x is an integer. The performing includes depositing the tungsten during a first ALD stage using a first dose intensity of the precursor gas, and depositing the tungsten during a second ALD stage using a second dose intensity of the precursor gas. The first dose intensity is based on a first dose concentration and a first dose period. The second dose intensity is based on a second dose concentration and a second dose period. The second dose intensity is 1.5 to 10 times the first dose intensity.
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公开(公告)号：US20160233220A1
公开(公告)日：2016-08-11
申请号：US15040561
申请日：2016-02-10
发明人： Michal Danek , Hanna Bamnolker , Raashina Humayun , Juwen Gao
IPC分类号： H01L27/108 , H01L23/532 , H01L27/115 , H01L23/522 , H01L21/768 , H01L21/28
CPC分类号： H01L27/10891 , C23C16/0272 , C23C16/08 , C23C16/30 , H01L21/28088 , H01L21/28282 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L23/53257 , H01L23/53266 , H01L27/10823 , H01L27/11556 , H01L27/11582
摘要： Disclosed herein are methods and related apparatus for formation of tungsten wordlines in memory devices. Also disclosed herein are methods and related apparatus for deposition of fluorine-free tungsten (FFW). According to various embodiments, the methods involve deposition of multi-component tungsten films using tungsten chloride (WClx) precursors and boron (B)-containing, silicon (Si)-containing or germanium (Ge)-containing reducing agents.
摘要翻译： 这里公开了用于在存储器件中形成钨字线的方法和相关装置。 本文还公开了用于沉积无氟钨（FFW）的方法和相关装置。 根据各种实施方案，所述方法包括使用氯化钨（WClx）前体和含硼（B）的含硅（Si）或含锗（Ge）的还原剂）沉积多组分钨膜。
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公开(公告)号：US20150179461A1
公开(公告)日：2015-06-25
申请号：US14135375
申请日：2013-12-19
发明人： Hanna Bamnolker , Raashina Humayun , Deqi Wang , Yan Guan
IPC分类号： H01L21/285 , C23C16/46 , C23C16/52 , H01L21/02 , C23C16/14
CPC分类号： H01L21/28556 , C23C16/0209 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45523 , H01L21/76843 , H01L21/76864 , H01L21/76876 , H01L21/76877 , H01L23/53266
摘要： Methods for depositing extremely low resistivity tungsten in semiconductor processing are disclosed herein. Methods involve annealing the substrate at various times during the tungsten deposition process to achieve uniform tungsten layers with substantially lower resistivity.
摘要翻译： 本文公开了在半导体处理中沉积极低电阻率钨的方法。 方法包括在钨沉积过程中在不同时间对衬底退火以获得具有基本上较低电阻率的均匀钨层。
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公开(公告)号：US11970776B2
公开(公告)日：2024-04-30
申请号：US17310293
申请日：2020-01-27
发明人： Joshua Collins , Griffin John Kennedy , Hanna Bamnolker , Patrick A. van Cleemput , Seshasayee Varadarajan
IPC分类号： C23C16/455 , C23C16/08 , C23C16/30 , C23C16/34 , C23C16/52 , H01L21/285 , H01L21/02
CPC分类号： C23C16/45553 , C23C16/08 , C23C16/308 , C23C16/34 , C23C16/45525 , C23C16/52 , H01L21/28568 , H01L21/02175 , H01L21/0228
摘要： Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some embodiments, thin metal oxynitride or metal nitride nucleation layers are deposited followed by deposition of a pure metal conductor. The nucleation layer is amorphous, which templates large pure metal film grain growth and reduced resistivity. Further, certain embodiments of the methods described below convert most or all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.
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公开(公告)号：US20240136192A1
公开(公告)日：2024-04-25
申请号：US18547481
申请日：2022-02-18
发明人： Lawrence Schloss , Joshua Collins , Griffin John Kennedy , Hanna Bamnolker , Sang-Hyeob Lee , Patrick van Cleemput , Sanjay Gopinath
IPC分类号： H01L21/285 , C23C16/02 , C23C16/14 , C23C16/455 , C23C16/46 , C23C16/52
CPC分类号： H01L21/28568 , C23C16/02 , C23C16/14 , C23C16/45527 , C23C16/45544 , C23C16/46 , C23C16/52
摘要： Provided herein are low resistance metallization stack structures for 3D-NAND applications and related methods of fabrication. In some embodiments, thin metal oxynitride nucleation layers are deposited on dielectric material followed by deposition of a pure metal conductor using process conditions that increase non-molybdenum component element content at the oxynitride-dielectric interface. Certain embodiments of the methods described below convert less than all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.
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公开(公告)号：US20220195598A1
公开(公告)日：2022-06-23
申请号：US17310293
申请日：2020-01-27
发明人： Joshua Collins , Griffin John Kennedy , Hanna Bamnolker , Patrick A. van Cleemput , Seshasayee Varadarajan
IPC分类号： C23C16/455 , H01L21/285 , C23C16/30 , C23C16/34
摘要： Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some embodiments, thin metal oxynitride or metal nitride nucleation layers are deposited followed by deposition of a pure metal conductor. The nucleation layer is amorphous, which templates large pure metal film grain growth and reduced resistivity. Further, certain embodiments of the methods described below convert most or all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.
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公开(公告)号：US09589808B2
公开(公告)日：2017-03-07
申请号：US14135375
申请日：2013-12-19
发明人： Hanna Bamnolker , Raashina Humayun , Deqi Wang , Yan Guan
IPC分类号： H01L21/44 , H01L21/285 , C23C16/14 , C23C16/02 , C23C16/04 , C23C16/455 , H01L21/768
CPC分类号： H01L21/28556 , C23C16/0209 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C16/45523 , H01L21/76843 , H01L21/76864 , H01L21/76876 , H01L21/76877 , H01L23/53266
摘要： Methods for depositing extremely low resistivity tungsten in semiconductor processing are disclosed herein. Methods involve annealing the substrate at various times during the tungsten deposition process to achieve uniform tungsten layers with substantially lower resistivity.
摘要翻译： 本文公开了在半导体处理中沉积极低电阻率钨的方法。 方法包括在钨沉积过程中在不同时间对衬底退火以获得具有基本上较低电阻率的均匀钨层。
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公开(公告)号：US11549175B2
公开(公告)日：2023-01-10
申请号：US17250014
申请日：2019-05-03
IPC分类号： C23C16/04 , C23C16/02 , C23C16/14 , C23C16/455
摘要： Provided herein are methods and apparatuses for filling features metal-containing materials. One aspect of the disclosure relates to a method for filling structures with a metal-containing material, the method including: providing a structure to be filled with a metal-containing material, exposing the structure to multiple deposition cycles, with each deposition cycle including exposure to one or more alternating reducing agent (e.g. hydrogen (H2)) dose/inert gas purge pulses pulse followed by exposure to one or more alternating metal precursor dose pulses and inert gas purge pulses. The metal may be tungsten (W) or molybdenum (Mo) in some embodiments. In some embodiments, the structure is a partially fabricated (3-D) NAND structure. Apparatuses to perform the methods are also provided.
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公开(公告)号：US11225712B2
公开(公告)日：2022-01-18
申请号：US16284517
申请日：2019-02-25
发明人： Joshua Collins , Siew Neo , Hanna Bamnolker , Kapil Umesh Sawlani
IPC分类号： C23C16/02 , C23C16/04 , C23C16/14 , C23C16/455
摘要： A method for depositing tungsten includes arranging a substrate including a titanium nitride layer in a substrate processing chamber and performing multi-stage atomic layer deposition of tungsten on the substrate using a precursor gas includes tungsten chloride (WCIx) gas, wherein x is an integer. The performing includes depositing the tungsten during a first ALD stage using a first dose intensity of the precursor gas, and depositing the tungsten during a second ALD stage using a second dose intensity of the precursor gas. The first dose intensity is based on a first dose concentration and a first dose period. The second dose intensity is based on a second dose concentration and a second dose period. The second dose intensity is 1.5 to 10 times the first dose intensity.
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