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公开(公告)号：US20200075403A1
公开(公告)日：2020-03-05
申请号：US16676169
申请日：2019-11-06
发明人： Shruti Vivek Thombare , Raashina Humayun , Michal Danek , Chiukin Steven Lai , Joshua Collins , Hanna Bamnolker , Griffin John Kennedy , Gorun Butail , Patrick A. van Cleemput
IPC分类号： H01L21/768 , H01L21/285 , H01L23/522
摘要： Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some implementations, the methods involve providing a tungsten (W)-containing layer on a substrate; and depositing a molybdenum (Mo)-containing layer on the W-containing layer. In some implementations, the methods involve depositing a Mo-containing layer directly on a dielectric or titanium nitride (TiN) substrate without an intervening W-containing layer.
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公开(公告)号：US20190185992A1
公开(公告)日：2019-06-20
申请号：US16284517
申请日：2019-02-25
发明人： Joshua Collins , Siew Neo , Hanna Bamnolker , Kapil Umesh Sawlani
IPC分类号： C23C16/02 , C23C16/455 , C23C16/04 , C23C16/14
CPC分类号： C23C16/0272 , C23C16/045 , C23C16/14 , C23C16/45527
摘要： A method for depositing tungsten includes arranging a substrate including a titanium nitride layer in a substrate processing chamber and performing multi-stage atomic layer deposition of tungsten on the substrate using a precursor gas includes tungsten chloride (WCIx) gas, wherein x is an integer. The performing includes depositing the tungsten during a first ALD stage using a first dose intensity of the precursor gas, and depositing the tungsten during a second ALD stage using a second dose intensity of the precursor gas. The first dose intensity is based on a first dose concentration and a first dose period. The second dose intensity is based on a second dose concentration and a second dose period. The second dose intensity is 1.5 to 10 times the first dose intensity.
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公开(公告)号：US11970776B2
公开(公告)日：2024-04-30
申请号：US17310293
申请日：2020-01-27
发明人： Joshua Collins , Griffin John Kennedy , Hanna Bamnolker , Patrick A. van Cleemput , Seshasayee Varadarajan
IPC分类号： C23C16/455 , C23C16/08 , C23C16/30 , C23C16/34 , C23C16/52 , H01L21/285 , H01L21/02
CPC分类号： C23C16/45553 , C23C16/08 , C23C16/308 , C23C16/34 , C23C16/45525 , C23C16/52 , H01L21/28568 , H01L21/02175 , H01L21/0228
摘要： Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some embodiments, thin metal oxynitride or metal nitride nucleation layers are deposited followed by deposition of a pure metal conductor. The nucleation layer is amorphous, which templates large pure metal film grain growth and reduced resistivity. Further, certain embodiments of the methods described below convert most or all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.
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公开(公告)号：US20240136192A1
公开(公告)日：2024-04-25
申请号：US18547481
申请日：2022-02-18
发明人： Lawrence Schloss , Joshua Collins , Griffin John Kennedy , Hanna Bamnolker , Sang-Hyeob Lee , Patrick van Cleemput , Sanjay Gopinath
IPC分类号： H01L21/285 , C23C16/02 , C23C16/14 , C23C16/455 , C23C16/46 , C23C16/52
CPC分类号： H01L21/28568 , C23C16/02 , C23C16/14 , C23C16/45527 , C23C16/45544 , C23C16/46 , C23C16/52
摘要： Provided herein are low resistance metallization stack structures for 3D-NAND applications and related methods of fabrication. In some embodiments, thin metal oxynitride nucleation layers are deposited on dielectric material followed by deposition of a pure metal conductor using process conditions that increase non-molybdenum component element content at the oxynitride-dielectric interface. Certain embodiments of the methods described below convert less than all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.
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公开(公告)号：US20220195598A1
公开(公告)日：2022-06-23
申请号：US17310293
申请日：2020-01-27
发明人： Joshua Collins , Griffin John Kennedy , Hanna Bamnolker , Patrick A. van Cleemput , Seshasayee Varadarajan
IPC分类号： C23C16/455 , H01L21/285 , C23C16/30 , C23C16/34
摘要： Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some embodiments, thin metal oxynitride or metal nitride nucleation layers are deposited followed by deposition of a pure metal conductor. The nucleation layer is amorphous, which templates large pure metal film grain growth and reduced resistivity. Further, certain embodiments of the methods described below convert most or all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.
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公开(公告)号：US20170335450A1
公开(公告)日：2017-11-23
申请号：US15595788
申请日：2017-05-15
发明人： Joshua Collins , Eric H. Lenz , Michal Danek
IPC分类号： C23C16/448 , C23C16/455 , C23C16/52
CPC分类号： C23C16/4481 , C23C16/448 , C23C16/45502 , C23C16/45512 , C23C16/45544 , C23C16/45561 , C23C16/45574 , C23C16/52
摘要： A vaporizer system is provided that allows for rapid shifts in the flow rate of a vaporized reactant while maintaining a constant overall flow rate of vaporized reactant and carrier gas.
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公开(公告)号：US11549175B2
公开(公告)日：2023-01-10
申请号：US17250014
申请日：2019-05-03
IPC分类号： C23C16/04 , C23C16/02 , C23C16/14 , C23C16/455
摘要： Provided herein are methods and apparatuses for filling features metal-containing materials. One aspect of the disclosure relates to a method for filling structures with a metal-containing material, the method including: providing a structure to be filled with a metal-containing material, exposing the structure to multiple deposition cycles, with each deposition cycle including exposure to one or more alternating reducing agent (e.g. hydrogen (H2)) dose/inert gas purge pulses pulse followed by exposure to one or more alternating metal precursor dose pulses and inert gas purge pulses. The metal may be tungsten (W) or molybdenum (Mo) in some embodiments. In some embodiments, the structure is a partially fabricated (3-D) NAND structure. Apparatuses to perform the methods are also provided.
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公开(公告)号：US11225712B2
公开(公告)日：2022-01-18
申请号：US16284517
申请日：2019-02-25
发明人： Joshua Collins , Siew Neo , Hanna Bamnolker , Kapil Umesh Sawlani
IPC分类号： C23C16/02 , C23C16/04 , C23C16/14 , C23C16/455
摘要： A method for depositing tungsten includes arranging a substrate including a titanium nitride layer in a substrate processing chamber and performing multi-stage atomic layer deposition of tungsten on the substrate using a precursor gas includes tungsten chloride (WCIx) gas, wherein x is an integer. The performing includes depositing the tungsten during a first ALD stage using a first dose intensity of the precursor gas, and depositing the tungsten during a second ALD stage using a second dose intensity of the precursor gas. The first dose intensity is based on a first dose concentration and a first dose period. The second dose intensity is based on a second dose concentration and a second dose period. The second dose intensity is 1.5 to 10 times the first dose intensity.
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公开(公告)号：US20210238736A1
公开(公告)日：2021-08-05
申请号：US17250014
申请日：2019-05-03
IPC分类号： C23C16/04 , C23C16/14 , C23C16/455 , C23C16/02
摘要： Provided herein are methods and apparatuses for filling features metal-containing materials. One aspect of the disclosure relates to a method for filling structures with a metal-containing material, the method including: providing a structure to be filled with a metal-containing material, exposing the structure to multiple deposition cycles, with each deposition cycle including exposure to one or more alternating reducing agent (e.g. hydrogen (H2)) dose/inert gas purge pulses pulse followed by exposure to one or more alternating metal precursor dose pulses and inert gas purge pulses. The metal may be tungsten (W) or molybdenum (Mo) in some embodiments. In some embodiments, the structure is a partially fabricated (3-D) NAND structure. Apparatuses to perform the methods are also provided.
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公开(公告)号：US10777453B2
公开(公告)日：2020-09-15
申请号：US16676169
申请日：2019-11-06
发明人： Shruti Vivek Thombare , Raashina Humayun , Michal Danek , Chiukin Steven Lai , Joshua Collins , Hanna Bamnolker , Griffin John Kennedy , Gorun Butail , Patrick A. van Cleemput
IPC分类号： H01L21/44 , H01L21/768 , H01L21/285 , H01L23/522 , H01L27/11582 , H01L23/532 , H01L27/108 , H01L27/11556
摘要： Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some implementations, the methods involve providing a tungsten (W)-containing layer on a substrate; and depositing a molybdenum (Mo)-containing layer on the W-containing layer. In some implementations, the methods involve depositing a Mo-containing layer directly on a dielectric or titanium nitride (TiN) substrate without an intervening W-containing layer.
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