公开(公告)号：US12014928B2

公开(公告)日：2024-06-18

申请号：US17250503

申请日：2019-07-31

申请人： Lam Research Corporation

发明人： Xiaolan Ba ,  Ruopeng Deng ,  Juwen Gao ,  Sanjay Gopinath ,  Lawrence Schloss

IPC分类号： H01L21/285 ,  C23C10/04 ,  C23C16/04 ,  C23C16/14 ,  C23C16/455 ,  H01L21/768 ,  H01L23/532 ,  H10B41/27 ,  H10B43/27

CPC分类号： H01L21/28568 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45527 ,  C23C16/45544 ,  H01L21/76805 ,  H01L21/76895 ,  H01L23/53209 ,  H01L23/53242 ,  H01L23/53257 ,  H10B41/27 ,  H10B43/27

摘要： Described herein are methods and apparatuses for filling semiconductor substrate structures with conductive material. The methods involve depositing multi-layer bulk metal films in structures with one or more deposition conditions changed when transitioning from layer-to-layer. The methods result in high fill quality, high throughput, low precursor consumption, and low roughness. Multi-station chambers to perform the methods are also provided.

公开(公告)号：US12060639B2

公开(公告)日：2024-08-13

申请号：US17594366

申请日：2020-04-15

申请人： Lam Research Corporation

发明人： Pragna Nannapaneni ,  Sema Ermez ,  Novy Tjokro ,  Ruopeng Deng ,  Tianhua Yu ,  Xiaolan Ba ,  Juwen Gao ,  Sanjay Gopinath

IPC分类号： C23C16/455 ,  C23C16/08 ,  H01L21/285 ,  H01L21/768 ,  H10B12/00 ,  H10B41/27 ,  H10B43/27

CPC分类号： C23C16/45527 ,  C23C16/08 ,  H01L21/28568 ,  H01L21/768 ,  H10B12/00 ,  H10B41/27 ,  H10B43/27

摘要： Provided herein are methods and related apparatus for purging processing chambers during an atomic layer deposition (ALD) process. The methods involve flowing purging gas from one or more accumulators to remove process gases from the processing chambers. Following the flowing of purging gas, additional reactants may be introduced into the processing chamber to continue an ALD cycle.

公开(公告)号：US20210313183A1

公开(公告)日：2021-10-07

申请号：US17250503

申请日：2019-07-31

申请人： Lam Research Corporation

发明人： Xiaolan Ba ,  Ruopeng Deng ,  Juwen Gao ,  Sanjay Gopinath ,  Lawrence Schloss

IPC分类号： H01L21/285 ,  H01L21/768 ,  C23C16/455 ,  C23C16/14 ,  C23C16/04

摘要： Described herein are methods and apparatuses for filling semiconductor substrate structures with conductive material. The methods involve depositing multi-layer bulk metal films in structures with one or more deposition conditions changed when transitioning from layer-to-layer. The methods result in high fill quality, high throughput, low precursor consumption, and low roughness. Multi-station chambers to perform the methods are also provided.

公开(公告)号：US20210335617A1

公开(公告)日：2021-10-28

申请号：US17312594

申请日：2019-12-13

申请人： Lam Research Corporation

发明人： Ruopeng Deng ,  Xiaolan Ba ,  Tianhua Yu ,  Yu Pan ,  Juwen Gao

IPC分类号： H01L21/285 ,  H01L21/768

摘要： Methods and apparatuses are described that provide tungsten deposition with low roughness. In some embodiments, the methods involve co-flowing nitrogen with hydrogen during an atomic layer deposition process of depositing tungsten that uses hydrogen as a reducing agent. In some embodiments, the methods involve depositing a cap layer, such as tungsten oxide or amorphous tungsten layer, on a sidewall surface of a 3D NAND structure. The disclosed embodiments have a wide variety of applications including depositing tungsten into 3D NAND structures.

公开(公告)号：US20180240675A1

公开(公告)日：2018-08-23

申请号：US15958662

申请日：2018-04-20

申请人： Lam Research Corporation

发明人： Hanna Bamnolker ,  Joshua Collins ,  Tomas Sadilek ,  Hyeong Seop Shin ,  Xiaolan Ba ,  Raashina Humayun ,  Michal Danek ,  Lawrence Schloss

IPC分类号： H01L21/285 ,  C23C16/52 ,  H01L21/768 ,  C23C16/458 ,  C23C16/455 ,  C23C16/04 ,  C23C16/02 ,  C23C16/14 ,  H01L27/11582

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/458 ,  C23C16/52 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76876 ,  H01L21/76877 ,  H01L27/11582 ,  H01L28/00

摘要： Methods of depositing fluorine-free tungsten by sequential CVD pulses, such as by alternately pulsing a fluorine-free tungsten precursor and hydrogen in cycles of temporally separated pulses, are provided. Some methods involve depositing fluorine-free tungsten by sequential CVD without depositing a tungsten nucleation layer. Methods also include depositing tungsten directly on a substrate surface using alternating pulses of a chlorine-containing tungsten precursor and hydrogen without treating the substrate surface. Methods also include depositing a tungsten layer using a reducing agent and fluorine-free tungsten-containing precursor and depositing bulk tungsten in sequential CVD cycles of alternating pulses of hydrogen and a tungsten-containing precursor.

公开(公告)号：US09754824B2

公开(公告)日：2017-09-05

申请号：US14723275

申请日：2015-05-27

申请人： Lam Research Corporation

发明人： Lawrence Schloss ,  Xiaolan Ba

IPC分类号： H01L21/44 ,  H01L21/768 ,  H01L21/285 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/455

CPC分类号： H01L21/76876 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28562 ,  H01L21/76877 ,  H01L21/76898

摘要： Aspects of the methods and apparatus described herein relate to deposition of tungsten nucleation layers and other tungsten-containing films. Various embodiments of the methods involve exposing a substrate to alternating pulses of a tungsten precursor and a reducing agent at low chamber pressure to thereby deposit a tungsten-containing layer on the surface of the substrate. According to various embodiments, chamber pressure may be maintained at or below 10 Torr. In some embodiments, chamber pressure may be maintained at or below 7 Torr, or even lower, such as at or below 5 Torr. The methods may be implemented with a fluorine-containing tungsten precursor, but result in very low or undetectable amounts of fluorine in the deposited layer.

公开(公告)号：US20160351444A1

公开(公告)日：2016-12-01

申请号：US14723275

申请日：2015-05-27

申请人： Lam Research Corporation

发明人： Lawrence Schloss ,  Xiaolan Ba

IPC分类号： H01L21/768

CPC分类号： H01L21/76876 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28562 ,  H01L21/76877 ,  H01L21/76898

摘要： Aspects of the methods and apparatus described herein relate to deposition of tungsten nucleation layers and other tungsten-containing films. Various embodiments of the methods involve exposing a substrate to alternating pulses of a tungsten precursor and a reducing agent at low chamber pressure to thereby deposit a tungsten-containing layer on the surface of the substrate. According to various embodiments, chamber pressure may be maintained at or below 10 Torr. In some embodiments, chamber pressure may be maintained at or below 7 Torr, or even lower, such as at or below 5 Torr. The methods may be implemented with a fluorine-containing tungsten precursor, but result in very low or undetectable amounts of fluorine in the deposited layer.

摘要翻译： 本文描述的方法和装置的方面涉及钨成核层和其它含钨膜的沉积。 该方法的各种实施方案包括将底物暴露于钨前体和还原剂在低室压力下的交替脉冲，从而在基底表面上沉积含钨层。 根据各种实施例，腔室压力可以保持在或低于10托。 在一些实施例中，腔室压力可以保持在或低于7托，甚至更低，例如在5托或低于5托。 所述方法可以用含氟钨前体实现，但是在沉积层中导致非常低或不可检测的氟量。

公开(公告)号：US20240266177A1

公开(公告)日：2024-08-08

申请号：US18612005

申请日：2024-03-21

申请人： Lam Research Corporation

发明人： Ruopeng Deng ,  Xiaolan Ba ,  Tianhua Yu ,  Yu Pan ,  Juwen Gao

IPC分类号： H01L21/285 ,  H01L21/768 ,  H10B41/27 ,  H10B43/27

CPC分类号： H01L21/28562 ,  H01L21/28568 ,  H01L21/76876 ,  H01L21/76877 ,  H10B41/27 ,  H10B43/27

摘要： Methods and apparatuses are described that provide tungsten deposition with low roughness. In some embodiments, the methods involve co-flowing nitrogen with hydrogen during an atomic layer deposition process of depositing tungsten that uses hydrogen as a reducing agent. In some embodiments, the methods involve depositing a cap layer, such as tungsten oxide or amorphous tungsten layer, on a sidewall surface of a 3D NAND structure. The disclosed embodiments have a wide variety of applications including depositing tungsten into 3D NAND structures.

公开(公告)号：US20220186370A1

公开(公告)日：2022-06-16

申请号：US17594366

申请日：2020-04-15

申请人： Lam Research Corporation

发明人： Pragna Nannapaneni ,  Sema Ermez ,  Novy Tjokro ,  Ruopeng Deng ,  Tianhua Yu ,  Xiaolan Ba ,  Juwen Gao ,  Sanjay Gopinath

IPC分类号： C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  C23C16/08

摘要： Provided herein are methods and related apparatus for purging processing chambers during an atomic layer deposition (ALD) process. The methods involve flowing purging gas from one or more accumulators to remove process gases from the processing chambers. Following the flowing of purging gas, additional reactants may be introduced into the processing chamber to continue an ALD cycle.

公开(公告)号：US20170117155A1

公开(公告)日：2017-04-27

申请号：US15398462

申请日：2017-01-04

申请人： Lam Research Corporation

发明人： Hanna Bamnolker ,  Joshua Collins ,  Tomas Sadilek ,  Hyeong Seop Shin ,  Xiaolan Ba ,  Raashina Humayun ,  Michal Danek ,  Lawrence Schloss

IPC分类号： H01L21/285 ,  C23C16/455 ,  C23C16/458 ,  H01L21/768 ,  C23C16/52

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/455 ,  C23C16/45523 ,  C23C16/458 ,  C23C16/52 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76876 ,  H01L21/76877 ,  H01L27/11582 ,  H01L28/00

摘要： Provided herein are methods of depositing fluorine-free tungsten by sequential CVD pulses, such as by alternately pulsing a chlorine-containing tungsten precursor and hydrogen in cycles of temporally separated pulses, without depositing a tungsten nucleation layer. Methods also include depositing tungsten directly on a substrate surface using alternating pulses of a chlorine-containing tungsten precursor and hydrogen without treating the substrate surface.