公开(公告)号：US20230317458A1

公开(公告)日：2023-10-05

申请号：US17887292

申请日：2022-08-12

Applicant: Applied Materials, Inc.

Inventor： Kai WU ,  Xi CEN ,  Dixiong WANG ,  Yang LI ,  Peiqi WANG

IPC: H01L21/285 ,  C23C16/56 ,  C23C16/455 ,  C23C16/50 ,  C23C16/08

CPC classification number: H01L21/28568 ,  C23C16/56 ,  C23C16/45553 ,  C23C16/50 ,  C23C16/08

Abstract: A method of forming an interconnect structure over a substrate includes forming a nucleation layer over a surface of the substrate. The surface of the substrate comprises a plurality of openings, and the process of forming the nucleation layer includes (a) exposing the substrate to a tungsten-containing precursor gas to form a tungsten-containing layer over a surface of each of the plurality of openings, (b) exposing the formed tungsten-containing layer to an etchant gas, wherein exposing the tungsten-containing layer to the etchant gas etches at least a portion of the tungsten-containing layer disposed at a top region of each of the plurality of openings, and repeating (a) and (b) one or more times. The method further includes forming a bulk layer over the formed nucleation layer.

公开(公告)号：US20240266215A1

公开(公告)日：2024-08-08

申请号：US18107326

申请日：2023-02-08

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Yang LI ,  Kai WU ,  Mehran BEHDJAT ,  Jallepally RAVI

IPC: H01L21/768 ,  H01L21/3205

CPC classification number: H01L21/76876 ,  H01L21/32051 ,  H01L21/76856 ,  H01L21/76877

Abstract: A method of forming a structure on a substrate, includes forming a nucleation layer within an opening of the substrate within a processing chamber. The method further includes forming a passivation layer on at least a portion of the nucleation layer by introducing radical treatment into the processing chamber. The method further includes forming a tungsten fill layer within the opening over the passivation layer and the nucleation layer, wherein the tungsten fill layer is formed by a plurality of treatment cycles. Each treatment cycle includes pulsing a first gas at the substrate for a pulse time duration while concurrently flowing a second gas over the substrate, and purging the first gas and the second gas by flowing a purge gas over the substrate for a purge time duration.

公开(公告)号：US20240258109A1

公开(公告)日：2024-08-01

申请号：US18532381

申请日：2023-12-07

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Min-Han LEE ,  Yang LI ,  Cheng CHENG ,  Zhixiu LIANG

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/14 ,  C23C16/34

CPC classification number: H01L21/28568 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/34

Abstract: A method of forming a structure on a substrate includes forming an adhesion layer on a substrate. The method further includes forming a tungsten containing layer in-situ with the adhesion layer. The tungsten containing layer is formed by a one-time soak process including soaking the substrate once, and only once, in a first gas, purging the first gas, and soaking the substrate once, and only once, in a second gas. The method further includes removing the tungsten containing layer from the adhesion layer.

公开(公告)号：US20240162089A1

公开(公告)日：2024-05-16

申请号：US18054798

申请日：2022-11-11

Applicant: Applied Materials, Inc.

Inventor： Dixiong WANG ,  Xi CEN ,  Kai WU ,  Peiqi WANG ,  Yang LI

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/76876 ,  H01L21/76883

Abstract: A method of forming a structure on a substrate that includes forming a tungsten nucleation layer within at least one opening within a multi-tier portion of a substrate. The method includes exposing the nucleation layer to a nitrogen-containing gas to inhibit growth of the nucleation layer at narrow points within the at least one opening. The method includes exposing the at least one opening of the substrate to the tungsten-containing precursor gas to form a fill layer over the nucleation layer within the at least one opening. The method includes exposing the at least one opening to a molybdenum-containing gas to remove a tungsten nitride layer from the tungsten fill layer.

公开(公告)号：US20240282631A1

公开(公告)日：2024-08-22

申请号：US18419526

申请日：2024-01-22

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Yao XU ,  Yang LI ,  Meng ZHU ,  Insu HA ,  Jianqiu GUO ,  Chao LI ,  Rongjun WANG ,  Xianmin TANG

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/76879 ,  H01L21/02068 ,  H01L21/28568 ,  H01L21/76843

Abstract: A method of filling a via having a necking point includes performing a pre-clean process to remove residues from an exposed surface of a metal layer at a bottom of a via and recover inner surfaces of the via, wherein the via is formed within a dielectric layer and has a necking point protruding within the via, performing a selective deposition process to partially fill the via with metal fill material from the exposed surface of the metal layer below the necking point, performing a liner deposition process to form a liner layer on exposed inner surfaces of the via, and performing a metal fill process to fill the via with the metal fill material.

公开(公告)号：US20240047268A1

公开(公告)日：2024-02-08

申请号：US18353447

申请日：2023-07-17

Applicant: Applied Materials, Inc.

Inventor： Peiqi WANG ,  Xi CEN ,  Dixiong WANG ,  Mingrui ZHAO ,  Yang LI ,  Kai WU

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53266

Abstract: A method of forming a structure on a substrate includes forming a tungsten nucleation layer within at least one opening within a multi-tier portion of a substrate. The method includes exposing the nucleation layer a nitrogen-containing gas to inhibit growth of the nucleation layer at narrow portions within the at least one opening. The method includes exposing the at least one opening to the tungsten-containing precursor gas to form a fill layer over the nucleation layer within the at least one opening. The method includes exposing the at least one opening of the substrate to the nitrogen-containing gas or a nitrogen-containing plasma to inhibit growth of portions of the fill layer along the at least one opening.