公开(公告)号：US20240282631A1

公开(公告)日：2024-08-22

申请号：US18419526

申请日：2024-01-22

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Yao XU ,  Yang LI ,  Meng ZHU ,  Insu HA ,  Jianqiu GUO ,  Chao LI ,  Rongjun WANG ,  Xianmin TANG

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/76879 ,  H01L21/02068 ,  H01L21/28568 ,  H01L21/76843

Abstract: A method of filling a via having a necking point includes performing a pre-clean process to remove residues from an exposed surface of a metal layer at a bottom of a via and recover inner surfaces of the via, wherein the via is formed within a dielectric layer and has a necking point protruding within the via, performing a selective deposition process to partially fill the via with metal fill material from the exposed surface of the metal layer below the necking point, performing a liner deposition process to form a liner layer on exposed inner surfaces of the via, and performing a metal fill process to fill the via with the metal fill material.