公开(公告)号：US20240332023A1

公开(公告)日：2024-10-03

申请号：US18621828

申请日：2024-03-29

申请人： Applied Materials, Inc.

发明人： Ying-Bing JIANG ,  In Seok HWANG ,  Zhijun CHEN ,  Avgerinos V. GELATOS ,  Joung Joo LEE ,  Xianmin TANG ,  Fredrick FISHBURN ,  Le ZHANG ,  Wangee KIM ,  Mahendra PAKALA

IPC分类号： H01L21/285 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/28518 ,  C23C16/24 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45557

摘要： The present disclosure relates to a method of selectively forming a silicide in high-aspect ratio structures by use of a multistep deposition process. A first precursor gas is delivered to a surface disposed within a processing region of a process chamber maintained at a first process pressure, where the substrate is maintained at a first temperature for a first period of time. A purge gas is delivered to for a second period of time after the first period of time has elapsed. A second precursor gas is delivered to the surface of the substrate. The second precursor being maintained at a second process pressure while the substrate is maintained at a second temperature for a third period of time. The purge gas is delivered to the processing region for a fourth period of time after the third period of time has elapsed.

公开(公告)号：US20240087955A1

公开(公告)日：2024-03-14

申请号：US18241343

申请日：2023-09-01

申请人： Applied Materials, Inc.

发明人： Yi XU ,  Xianyuan ZHAO ,  Zhimin QI ,  Aixi ZHANG ,  Geraldine VASQUEZ ,  Dien-Yeh WU ,  Wei LEI ,  Xingyao GAO ,  Shirish PETHE ,  Wenting HOU ,  Chao DU ,  Tsung-Han YANG ,  Kyoung-Ho BU ,  Chen-Han LIN ,  Jallepally RAVI ,  Yu LEI ,  Rongjun WANG ,  Xianmin TANG

IPC分类号： H01L21/768

CPC分类号： H01L21/76879 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76876

摘要： A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.

公开(公告)号：US20210371972A1

公开(公告)日：2021-12-02

申请号：US16889017

申请日：2020-06-01

申请人： APPLIED MATERIALS, INC.

发明人： Xiangjin XIE ,  Carmen LEAL CERVANTES ,  Feng CHEN ,  Lu CHEN ,  Wenjing XU ,  Aravind KAMATH ,  Cheng-Hsiung Matthew TSAI ,  Tae Hong HA ,  Alexander JANSEN ,  Xianmin TANG

IPC分类号： C23C14/56 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

摘要： Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

公开(公告)号：US20180142343A1

公开(公告)日：2018-05-24

申请号：US15814497

申请日：2017-11-16

申请人： APPLIED MATERIALS, INC.

发明人： Weimin ZENG ,  Yong CAO ,  Daniel Lee DIEHL ,  Huixiong DAI ,  Khoi PHAN ,  Christopher NGAI ,  Rongjun WANG ,  Xianmin TANG

IPC分类号： C23C14/35 ,  C23C14/22 ,  C23C14/14 ,  C23C14/54

CPC分类号： C23C14/35 ,  C23C14/0057 ,  C23C14/042 ,  C23C14/06 ,  C23C14/14 ,  C23C14/228 ,  C23C14/54 ,  H01J37/34 ,  H01J2237/332

摘要： In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas and a hydrogen-containing gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein adjusting the flow rate of the hydrogen containing gas tunes the optical properties of the deposited amorphous silicon layer.

公开(公告)号：US20170098540A1

公开(公告)日：2017-04-06

申请号：US15280161

申请日：2016-09-29

申请人： APPLIED MATERIALS, INC.

发明人： Xiangjin XIE ,  Feng Q. LIU ,  Daping YAO ,  Alexander JANSEN ,  Joung Joo LEE ,  Adolph Miller ALLEN ,  Xianmin TANG ,  Mei CHANG

IPC分类号： H01L21/02 ,  B08B5/00 ,  B08B9/027 ,  B08B7/00

CPC分类号： H01L21/02068 ,  B08B3/00 ,  B08B3/106 ,  B08B5/00 ,  B08B7/0035 ,  B08B9/00 ,  B08B9/027 ,  C23G1/24 ,  F01D5/005 ,  F05D2230/90 ,  H01L21/02063 ,  H01L21/76814

摘要： Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt. % of an alcohol to reduce a contaminated surface of the conductive material.

公开(公告)号：US20170029941A1

公开(公告)日：2017-02-02

申请号：US15237414

申请日：2016-08-15

申请人： Applied Materials, Inc.

发明人： Adolph Miller ALLEN ,  Lara HAWRYLCHAK ,  Zhigang XIE ,  Muhammad M. RASHEED ,  Rongjun WANG ,  Xianmin TANG ,  Zhendong LIU ,  Tza-Jing GUNG ,  Srinivas GANDIKOTA ,  Mei CHANG ,  Michael S. COX ,  Donny YOUNG ,  Kirankumar SAVANDAIAH ,  Zhenbin GE

IPC分类号： C23C14/56 ,  H01J37/32 ,  C23C14/34 ,  H01J37/34 ,  C23C14/35 ,  C23C14/54

摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

摘要翻译： 本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。 处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。 该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置 的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

公开(公告)号：US20160372371A1

公开(公告)日：2016-12-22

申请号：US15189768

申请日：2016-06-22

申请人： Applied Materials, Inc.

发明人： Kaushal K. SINGH ,  Er-Xuan PING ,  Xianmin TANG ,  Sundar RAMAMURTHY ,  Randhir THAKUR

IPC分类号： H01L21/768

CPC分类号： H01L21/28518 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/53219

摘要： Embodiments described herein generally relate to methods for forming silicide materials. Silicide materials formed according to the embodiments described herein may be utilized as contact and/or interconnect structures and may provide advantages over conventional silicide formation methods. In one embodiment, a one or more transition metal and aluminum layers may be deposited on a silicon containing substrate and a transition metal layer may be deposited on the one or more transition metal and aluminum layers. An annealing process may be performed to form a metal silicide material.

摘要翻译： 本文所述的实施方案一般涉及形成硅化物材料的方法。 根据本文所述的实施方案形成的硅化物材料可以用作接触和/或互连结构，并且可以提供优于常规硅化物形成方法的优点。 在一个实施例中，一个或多个过渡金属和铝层可以沉积在含硅衬底上，并且过渡金属层可以沉积在一个或多个过渡金属和铝层上。 可以进行退火工艺以形成金属硅化物材料。

公开(公告)号：US20240363407A1

公开(公告)日：2024-10-31

申请号：US18309669

申请日：2023-04-28

申请人： Applied Materials, Inc.

发明人： Jie ZHANG ,  Liqi WU ,  Cory LAFOLLETT ,  Tsung-Han YANG ,  Wei WENG ,  Qihao ZHU ,  Jiang LU ,  Rongjun WANG ,  Xianmin TANG

IPC分类号： H01L21/768 ,  H01L21/02

CPC分类号： H01L21/76877 ,  H01L21/02274 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76883

摘要： Embodiments of the present disclosure generally relate to a method for forming an electrically conductive feature on a substrate. In one embodiment, the method includes forming a first conductive layer via physical vapor deposition (PVD) in an opening of a substrate. The first conductive layer has a thickness of less than 20 angstroms. The method further includes forming a second conductive layer via PVD on the first conductive layer. The first conductive layer and the second conductive layer are formed at a temperature of less than 50° C. The method further includes annealing at least a portion of the first conductive layer and the second conductive layer.

公开(公告)号：US20220364230A1

公开(公告)日：2022-11-17

申请号：US17733331

申请日：2022-04-29

申请人： Applied Materials, Inc.

发明人： Rui LI ,  Xiangjin XIE ,  Xianmin TANG ,  Anthony Chih-Tung CHAN

IPC分类号： C23C16/455 ,  H01J37/32

摘要： Methods and apparatus for forming a barrier layer are provided herein. In some embodiments, a method of forming a barrier layer on a substrate includes treating an exposed layer deposited on a substrate and within a feature of the substrate by pulsing a bias power applied to a substrate support supporting the substrate while exposing the layer to a plasma. The exposed layer can be deposited by an atomic layer deposition process, and can be, for example, a tantalum nitride layer. The bias power can be up to 500 watts of RF power at a pulse frequency of about 1 Hz to about 10 kHz. The bias power can be pulsed uniformly or at multiple different levels.

公开(公告)号：US20220020578A1

公开(公告)日：2022-01-20

申请号：US16928606

申请日：2020-07-14

申请人： APPLIED MATERIALS, INC.

发明人： Xiangjin XIE ,  Fuhong ZHANG ,  Shirish A. PETHE ,  Martin Lee RIKER ,  Lewis Yuan Tse LO ,  Lanlan ZHONG ,  Xianmin TANG ,  Paul Dennis CONNORS

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/54 ,  C23C14/14 ,  H01J37/32

摘要： Methods and apparatus for processing a substrate are provided herein. A method, for example, includes igniting a plasma at a first pressure within a processing volume of a process chamber; depositing sputter material from a target disposed within the processing volume while decreasing the first pressure to a second pressure within a first time frame while maintaining the plasma; continuing to deposit sputter material from the target while decreasing the second pressure to a third pressure within a second time frame less than the first time frame while maintaining the plasma; and continuing to deposit sputter material from the target while maintaining the third pressure for a third time frame that is greater than or equal to the second time frame while maintaining the plasma.