公开(公告)号：US20240332023A1

公开(公告)日：2024-10-03

申请号：US18621828

申请日：2024-03-29

申请人： Applied Materials, Inc.

发明人： Ying-Bing JIANG ,  In Seok HWANG ,  Zhijun CHEN ,  Avgerinos V. GELATOS ,  Joung Joo LEE ,  Xianmin TANG ,  Fredrick FISHBURN ,  Le ZHANG ,  Wangee KIM ,  Mahendra PAKALA

IPC分类号： H01L21/285 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/28518 ,  C23C16/24 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45557

摘要： The present disclosure relates to a method of selectively forming a silicide in high-aspect ratio structures by use of a multistep deposition process. A first precursor gas is delivered to a surface disposed within a processing region of a process chamber maintained at a first process pressure, where the substrate is maintained at a first temperature for a first period of time. A purge gas is delivered to for a second period of time after the first period of time has elapsed. A second precursor gas is delivered to the surface of the substrate. The second precursor being maintained at a second process pressure while the substrate is maintained at a second temperature for a third period of time. The purge gas is delivered to the processing region for a fourth period of time after the third period of time has elapsed.