公开(公告)号：US20240191354A1

公开(公告)日：2024-06-13

申请号：US18078841

申请日：2022-12-09

申请人： Applied Materials, Inc.

发明人： Ying-Bing JIANG ,  Joung Joo LEE ,  Xianmin TANG ,  Jiang LU ,  Avgerinos V. GELATOS ,  Dien-yeh WU ,  Weifeng YE ,  Yiyang WAN ,  Gary HOW ,  Joseph HERNANDEZ

IPC分类号： C23C16/455 ,  C23C16/42 ,  C23C16/505 ,  H01J37/32

CPC分类号： C23C16/45536 ,  C23C16/42 ,  C23C16/45553 ,  C23C16/45565 ,  C23C16/505 ,  H01J37/321 ,  H01J2237/3321

摘要： Methods of depositing a metal silicide on a substrate are provided herein. In some embodiments, a method of depositing a metal silicide on a substrate having a silicon containing surface includes: creating a plasma comprising a first gas in a plasma region in a chemical vapor deposition (CVD) chamber, wherein the plasma region is disposed between a lid heater and a showerhead; flowing the first gas through a plurality of first openings of the showerhead to an activation region in the CVD chamber disposed between the showerhead and the substrate; flowing a second gas comprising a metal precursor in a non-plasma state through a plurality of second openings of the showerhead to the activation region, wherein the plurality of second openings are fluidly independent from the plurality of first openings within the showerhead; mixing the first gas with the second gas to activate the second gas in the activation region; and exposing the silicon containing surface of the substrate to the activated second gas.

公开(公告)号：US20230017383A1

公开(公告)日：2023-01-19

申请号：US17375654

申请日：2021-07-14

申请人： Applied Materials, Inc.

发明人： Bencherki MEBARKI ,  Joung Joo LEE ,  Komal GARDE ,  Kishor Kumar KALATHIPARAMBIL ,  Xianmin TANG ,  Xiangjin XIE ,  Rui LI

IPC分类号： H01L21/768 ,  H01L21/285 ,  C23C14/34

摘要： Methods and apparatus for processing a substrate are provided. For example, a method includes sputtering a material from a target in a PVD chamber to form a material layer on a layer comprising a feature of the substrate, the feature having an opening width defined by a first sidewall and a second sidewall, the material layer having a greater lateral thickness at the top surface of the layer than a thickness on the first sidewall or the second sidewall within the feature, depositing additional material on the layer by biasing the layer with an RF bias at a low power, etching the material layer from the layer by biasing the layer with an RF bias at a high-power, and repeatedly alternating between the low power and the high-power at a predetermined frequency.

公开(公告)号：US20190148150A1

公开(公告)日：2019-05-16

申请号：US16172786

申请日：2018-10-27

申请人： Applied Materials, Inc.

发明人： Joung Joo LEE ,  Feng CHEN ,  Zhiyuan WU ,  Atashi BASU ,  Mehul B. NAIK ,  Yufei HU

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L23/528

摘要： Methods for forming a capping protection structure on a metal line layer formed in an insulating material in an interconnection structure are provided. In one embodiment, a method for forming capping protection on a metal line in an interconnection structure for semiconductor devices includes selectively forming a metal silicide layer on a metal line bounded by a dielectric bulk insulating layer in a back end interconnection structure formed on a substrate in a processing chamber; and forming a dielectric layer on the metal silicide layer.

公开(公告)号：US20240194605A1

公开(公告)日：2024-06-13

申请号：US18534333

申请日：2023-12-08

申请人： Applied Materials, Inc.

发明人： Mohammad Mahdi TAVAKOLI ,  Avgerinos V. GELATOS ,  Jiajie CEN ,  Kevin KASHEFI ,  Joung Joo LEE ,  Zhihui LIU ,  Yang ZHOU ,  Zhiyuan WU ,  Meng-Shan WU

IPC分类号： H01L23/532 ,  H01J37/32 ,  H01L21/02 ,  H01L21/768

CPC分类号： H01L23/53266 ,  H01J37/32357 ,  H01L21/02068 ,  H01L21/76843 ,  H01L21/76877 ,  H01J2237/335

摘要： A semiconductor structure includes a first level comprising a metal layer within a first dielectric layer formed on a substrate, a second level formed on the first level, the second level comprising an interconnect within a second dielectric layer and a barrier layer formed around the interconnect, and a metal capping layer disposed at an interface between the metal layer and the interconnect, wherein the metal capping layer comprises tungsten (W) and has a thickness of between 20 Å and 40 Å.

公开(公告)号：US20220403505A1

公开(公告)日：2022-12-22

申请号：US17348849

申请日：2021-06-16

申请人： Applied Materials, Inc.

发明人： Annamalai LAKSHMANAN ,  Jacqueline S. WRENCH ,  Feihu WANG ,  Yixiong YANG ,  Joung Joo LEE ,  Srinivas GANDIKOTA ,  Sang-heum KIM ,  Zhebo CHEN ,  Gang SHEN

IPC分类号： C23C16/02 ,  C23C16/06 ,  C23C16/52 ,  C23C14/16 ,  C23C16/455 ,  C23C16/42 ,  C23C14/06 ,  C23C16/56 ,  C23C14/02 ,  C23C14/58

摘要： Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.

公开(公告)号：US20220020577A1

公开(公告)日：2022-01-20

申请号：US17490840

申请日：2021-09-30

申请人： APPLIED MATERIALS, INC.

发明人： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54

摘要： Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US20210071294A1

公开(公告)日：2021-03-11

申请号：US17101933

申请日：2020-11-23

申请人： APPLIED MATERIALS, INC.

发明人： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC分类号： C23C14/35 ,  C23C14/54 ,  H01J37/34

摘要： Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a physical vapor deposition chamber includes: a body having an interior volume and a lid assembly including a target to be sputtered; a magnetron disposed above the target, wherein the magnetron is configured to rotate a plurality of magnets about a central axis of the physical vapor deposition chamber; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support a substrate; a collimator disposed between the target and the substrate support, the collimator having a central region having a first thickness and a peripheral region having a second thickness less than the first thickness; a first power source coupled to the target to electrically bias the target; and a second power source coupled to the substrate support to electrically bias the substrate support.

公开(公告)号：US20230402271A1

公开(公告)日：2023-12-14

申请号：US18237934

申请日：2023-08-25

申请人： APPLIED MATERIALS, INC.

发明人： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54

CPC分类号： H01J37/3458 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3411 ,  C23C14/345 ,  H01J37/3441 ,  H01J37/3402 ,  C23C14/351 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3447 ,  H01J37/3455

摘要： Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US20230122969A1

公开(公告)日：2023-04-20

申请号：US18067415

申请日：2022-12-16

申请人： Applied Materials, Inc.

发明人： Shirish PETHE ,  Fuhong ZHANG ,  Joung Joo LEE ,  Rui LI ,  Xiangjin XIE ,  Xianmin TANG

IPC分类号： H01L21/768 ,  H01L21/3215 ,  H01L21/3213

摘要： Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.

公开(公告)号：US20210118729A1

公开(公告)日：2021-04-22

申请号：US17036038

申请日：2020-09-29

申请人： Applied Materials, Inc.

发明人： Shirish PETHE ,  Fuhong ZHANG ,  Joung Joo LEE ,  Rui LI ,  Xiangjin XIE ,  Xianmin TANG

IPC分类号： H01L21/768 ,  H01L21/3215 ,  H01L21/3213

摘要： Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.