公开(公告)号：US20230420295A1

公开(公告)日：2023-12-28

申请号：US18133102

申请日：2023-04-11

Applicant: Applied Materials, Inc.

Inventor： Tsung-Han YANG ,  Xingyao GAO ,  Shiyu YUE ,  Chih-Hsun HSU ,  Shirish PETHE ,  Rongjun WANG ,  Yi XU ,  Wei LEI ,  Yu LEI ,  Aixi ZHANG ,  Xianyuan ZHAO ,  Zhimin QI ,  Jiang LU ,  Xianmin TANG

IPC: H01L21/768 ,  H01L21/285 ,  H01J37/32

CPC classification number: H01L21/76877 ,  H01L21/76876 ,  H01L21/76865 ,  H01L21/2855 ,  H01J2237/338 ,  H01L21/76856 ,  H01L21/76861 ,  H01J37/32899 ,  H01L21/76843

Abstract: A method and apparatus for tungsten gap-fill in semiconductor devices are provided. The method includes performing a gradient oxidation process to oxidize exposed portions of a liner layer, wherein the gradient oxidation process preferentially oxidizes an overhang portion of the liner layer, which obstructs or blocks top openings of one or more features formed within a field region of a substrate. The method further includes performing an etchback process to remove or reduce the oxidized overhang portion of the liner layer, exposing the liner layer to a chemical vapor transport (CVT) process to remove metal oxide remaining from the gradient oxidation process and the etchback process, and performing a tungsten gap-fill process to fill or partially fill the one or more features.

公开(公告)号：US20240087955A1

公开(公告)日：2024-03-14

申请号：US18241343

申请日：2023-09-01

Applicant: Applied Materials, Inc.

Inventor： Yi XU ,  Xianyuan ZHAO ,  Zhimin QI ,  Aixi ZHANG ,  Geraldine VASQUEZ ,  Dien-Yeh WU ,  Wei LEI ,  Xingyao GAO ,  Shirish PETHE ,  Wenting HOU ,  Chao DU ,  Tsung-Han YANG ,  Kyoung-Ho BU ,  Chen-Han LIN ,  Jallepally RAVI ,  Yu LEI ,  Rongjun WANG ,  Xianmin TANG

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76876

Abstract: A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.

公开(公告)号：US20200350159A1

公开(公告)日：2020-11-05

申请号：US16752630

申请日：2020-01-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Rui LI ,  Xiangjin XIE ,  Fuhong Zhang ,  Shirish PETHE ,  Adolph ALLEN ,  Lanlan Zhong ,  Xianmin TANG

IPC: H01L21/02 ,  H01L21/768 ,  C23C14/34 ,  C23C18/38

Abstract: Methods and apparatus for method for filling a feature with copper. In some embodiments, the methods include: (a) depositing a first cobalt layer via a physical vapor deposition (PVD) process atop a substrate field and atop a sidewall and a bottom surface of a feature disposed in a substrate to form a first cobalt portion atop the substrate field and a second cobalt portion atop the sidewall; (b) depositing copper atop the first cobalt portion atop the substrate field; and (c) flowing the copper disposed atop the first cobalt portion atop the substrate field over the second cobalt portion and into the feature, wherein the first cobalt portion atop the substrate field reduces the mobility of copper compared to the mobility of copper over the second cobalt portion.

公开(公告)号：US20230122969A1

公开(公告)日：2023-04-20

申请号：US18067415

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Shirish PETHE ,  Fuhong ZHANG ,  Joung Joo LEE ,  Rui LI ,  Xiangjin XIE ,  Xianmin TANG

IPC: H01L21/768 ,  H01L21/3215 ,  H01L21/3213

Abstract: Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.

公开(公告)号：US20210118729A1

公开(公告)日：2021-04-22

申请号：US17036038

申请日：2020-09-29

Applicant: Applied Materials, Inc.

Inventor： Shirish PETHE ,  Fuhong ZHANG ,  Joung Joo LEE ,  Rui LI ,  Xiangjin XIE ,  Xianmin TANG

IPC: H01L21/768 ,  H01L21/3215 ,  H01L21/3213

Abstract: Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.