公开(公告)号：US20220328285A1

公开(公告)日：2022-10-13

申请号：US17496427

申请日：2021-10-07

Applicant: Applied Materials, Inc.

Inventor： Abdullah ZAFAR ,  William John DURAND ,  Xinyuan CHONG ,  Kenric CHOI ,  Weize HU ,  Kelvin CHAN ,  Amir BAYATI ,  Michelle SANPEDRO ,  Philip A. KRAUS ,  Adolph Miller ALLEN

IPC: H01J37/32 ,  G01N21/3504 ,  G01N33/00 ,  C23C16/455 ,  C23C16/52

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a gas supply configured for use with a processing chamber includes an ampoule that stores a precursor and comprises an input to receive a carrier gas and an output to provide a mixture of the carrier gas and the precursor to the processing chamber and a sensor assembly comprising a detector and an infrared source operably connected to an outside of an enclosure, through which the mixture flows, and a gas measurement volume disposed within the enclosure and along an inner wall thereof so that a concentration of the precursor in the mixture can be measured by the detector and transmitted to a controller.

公开(公告)号：US20220020577A1

公开(公告)日：2022-01-20

申请号：US17490840

申请日：2021-09-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54

Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US20210071294A1

公开(公告)日：2021-03-11

申请号：US17101933

申请日：2020-11-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC: C23C14/35 ,  C23C14/54 ,  H01J37/34

Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a physical vapor deposition chamber includes: a body having an interior volume and a lid assembly including a target to be sputtered; a magnetron disposed above the target, wherein the magnetron is configured to rotate a plurality of magnets about a central axis of the physical vapor deposition chamber; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support a substrate; a collimator disposed between the target and the substrate support, the collimator having a central region having a first thickness and a peripheral region having a second thickness less than the first thickness; a first power source coupled to the target to electrically bias the target; and a second power source coupled to the substrate support to electrically bias the substrate support.

公开(公告)号：US20230402271A1

公开(公告)日：2023-12-14

申请号：US18237934

申请日：2023-08-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54

CPC classification number: H01J37/3458 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3411 ,  C23C14/345 ,  H01J37/3441 ,  H01J37/3402 ,  C23C14/351 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3447 ,  H01J37/3455

Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US20190088457A1

公开(公告)日：2019-03-21

申请号：US16043117

申请日：2018-07-23

Applicant: Applied Materials, Inc.

Inventor： Viachslav BABAYAN ,  Zhong Qiang HUA ,  Menglu WU ,  Adolph Miller ALLEN ,  Bhargav CITLA

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/34

Abstract: Embodiments presented herein relate to a method of and apparatus for processing a substrate in a semiconductor processing system. The method begins by initializing a pulse synchronization controller coupled between a pulse RF bias generator and a HIPIMs generator. A first timing signal is sent by the pulse synchronization controller to the pulse RF bias generator and the HIPIMs generator. A sputtering target and an RF electrode disposed in a substrate support is energized based on the first timing signal. The target and the electrode is de-energized based on an end of the timing signal. A second timing signal is sent by the pulse synchronization controller to the pulse RF bias generator and the electrode is energized and de-energized without energizing the target in response to the second timing signal.

公开(公告)号：US20180330977A1

公开(公告)日：2018-11-15

申请号：US15593502

申请日：2017-05-12

Applicant: Applied Materials, Inc.

Inventor： Chong JIANG ,  Lei JING ,  Mingte LIU ,  Adolph Miller ALLEN ,  Michael W. JOHNSON ,  Pallavi ZHANG ,  Michael D. ARMACOST

IPC: H01L21/683 ,  H01L21/66 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/6833 ,  H01J37/32091 ,  H01J37/32577 ,  H01J37/32697 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3299

Abstract: Embodiments of the disclosure relate to methods and a system for adjusting the chucking voltage of an electrostatic chuck. In one embodiment, a system for plasma processing a substrate includes a plasma processing chamber, a radio-frequency (RF) matching circuit coupled to the chamber, a sensor and a controller. The chamber includes a chamber body having an inner volume, a bipolar electrostatic chuck disposed in the inner volume and a power supply configured to provide chucking voltage to a pair of electrodes embedded within the electrostatic chuck. When plasma is energized within the chamber by the application of RF power through an RF matching circuit, the sensor is configured to detect a change in an electrical characteristic at the RF matching circuit. The controller is coupled to the power supply and configured to adjust the chucking voltage in response to the change in the electrical characteristic detected by the sensor.

公开(公告)号：US20150214475A1

公开(公告)日：2015-07-30

申请号：US14677761

申请日：2015-04-02

Applicant: Applied Materials, Inc.

Inventor： Roman GOUK ,  Steven VERHAVERBEKE ,  Alexander KONTOS ,  Adolph Miller ALLEN ,  Kevin MORAES

IPC: H01L43/12 ,  H01F41/34

CPC classification number: H01L43/12 ,  G11B5/746 ,  G11B5/855 ,  G11C11/16 ,  H01F41/34 ,  H01L21/2855 ,  H01L21/3081

Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.

Abstract translation: 描述了在基板上形成具有磁特性图案的磁性层的方法和装置。 该方法包括使用金属氮化物硬掩模层通过等离子体曝光对磁性层进行图案化。 使用具有氧化硅图案负材料的纳米压印图案化工艺对金属氮化物层进行构图。 在使用含卤素和含氧远距离等离子体的金属氮化物中形成图案，并且在使用苛性湿法剥离法等离子体暴露后除去。 所有加工都是在低温下进行，以避免热损坏磁性材料。

公开(公告)号：US20230141298A1

公开(公告)日：2023-05-11

申请号：US17865144

申请日：2022-07-14

Applicant: Applied Materials, Inc.

Inventor： Anthony Chih-Tung CHAN ,  Adolph Miller ALLEN ,  Mehul CHAUHAN

IPC: H01J37/34 ,  C23C14/35

CPC classification number: H01J37/3452 ,  C23C14/35 ,  H01J37/3417 ,  H01J2237/3323

Abstract: Methods and apparatus for generating a magnetic field external to a physical vapor deposition (PVD) chamber to improve etch or deposition uniformity on a substrate disposed inside of the PVD chamber are provided herein. In some embodiments, a process chamber, includes a chamber body defining an interior volume therein; a pedestal disposed in the interior volume for supporting a substrate; a coil disposed in the interior volume above the pedestal; and an external magnet assembly, comprising: a housing coupled to the chamber body; and a plurality of magnets disposed external to the chamber body coupled to the housing and arranged asymmetrically about the chamber body.

公开(公告)号：US20170098540A1

公开(公告)日：2017-04-06

申请号：US15280161

申请日：2016-09-29

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin XIE ,  Feng Q. LIU ,  Daping YAO ,  Alexander JANSEN ,  Joung Joo LEE ,  Adolph Miller ALLEN ,  Xianmin TANG ,  Mei CHANG

IPC: H01L21/02 ,  B08B5/00 ,  B08B9/027 ,  B08B7/00

CPC classification number: H01L21/02068 ,  B08B3/00 ,  B08B3/106 ,  B08B5/00 ,  B08B7/0035 ,  B08B9/00 ,  B08B9/027 ,  C23G1/24 ,  F01D5/005 ,  F05D2230/90 ,  H01L21/02063 ,  H01L21/76814

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt. % of an alcohol to reduce a contaminated surface of the conductive material.

公开(公告)号：US20170029941A1

公开(公告)日：2017-02-02

申请号：US15237414

申请日：2016-08-15

Applicant: Applied Materials, Inc.

Inventor： Adolph Miller ALLEN ,  Lara HAWRYLCHAK ,  Zhigang XIE ,  Muhammad M. RASHEED ,  Rongjun WANG ,  Xianmin TANG ,  Zhendong LIU ,  Tza-Jing GUNG ,  Srinivas GANDIKOTA ,  Mei CHANG ,  Michael S. COX ,  Donny YOUNG ,  Kirankumar SAVANDAIAH ,  Zhenbin GE

IPC: C23C14/56 ,  H01J37/32 ,  C23C14/34 ,  H01J37/34 ,  C23C14/35 ,  C23C14/54

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

Abstract translation: 本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。 处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。 该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置 的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。