公开(公告)号：US20190127842A1

公开(公告)日：2019-05-02

申请号：US15797361

申请日：2017-10-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Viachslav BABAYAN ,  Adolph Miller ALLEN ,  Bhargav CITLA ,  Ronald D. DEDORE ,  Vanessa FAUNE ,  Zhong Qiang HUA ,  Vaibhav SONI ,  Menglu WU

IPC: C23C14/34 ,  C23C14/06 ,  C23C14/35 ,  H01J37/34 ,  H01L21/02

Abstract: An apparatus and method of forming a dielectric film layer using a physical vapor deposition process include delivering a sputter gas to a substrate positioned in a processing region of a process chamber, the process chamber having a dielectric-containing sputter target, delivering an energy pulse to the sputter gas to create a sputtering plasma, the sputtering plasma being formed by energy pulses having an average voltage between about 800 volts and about 2000 volts and an average current between about 50 amps and about 300 amps at a frequency which is less than 50 kHz and greater than 5 kHz and directing the sputtering plasma toward the dielectric-containing sputter target to form an ionized species comprising dielectric material sputtered from the dielectric-containing sputter target, the ionized species forming a dielectric-containing film on the substrate.

公开(公告)号：US20190088457A1

公开(公告)日：2019-03-21

申请号：US16043117

申请日：2018-07-23

Applicant: Applied Materials, Inc.

Inventor： Viachslav BABAYAN ,  Zhong Qiang HUA ,  Menglu WU ,  Adolph Miller ALLEN ,  Bhargav CITLA

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/34

Abstract: Embodiments presented herein relate to a method of and apparatus for processing a substrate in a semiconductor processing system. The method begins by initializing a pulse synchronization controller coupled between a pulse RF bias generator and a HIPIMs generator. A first timing signal is sent by the pulse synchronization controller to the pulse RF bias generator and the HIPIMs generator. A sputtering target and an RF electrode disposed in a substrate support is energized based on the first timing signal. The target and the electrode is de-energized based on an end of the timing signal. A second timing signal is sent by the pulse synchronization controller to the pulse RF bias generator and the electrode is energized and de-energized without energizing the target in response to the second timing signal.

公开(公告)号：US20180209037A1

公开(公告)日：2018-07-26

申请号：US15820777

申请日：2017-11-22

Applicant: Applied Materials, Inc.

Inventor： Bhargav CITLA ,  Jingjing LIU ,  Zhong Qiang HUA ,  Chentsau YING ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: C23C14/35 ,  C23C14/34 ,  C23C14/06 ,  C23C14/00 ,  C23C14/58 ,  C23C16/26 ,  C23C16/503 ,  H01L21/02

Abstract: Embodiments of the present disclosure generally describe methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a high power impulse magnetron sputtering (HiPIMS) process, and in particular, biasing of the substrate during the deposition process and flowing a nitrogen source gas and/or a hydrogen source gas into the processing chamber in addition to an inert gas to improve the morphology and film stress of the deposited amorphous carbon layer.