公开(公告)号：US20190127842A1

公开(公告)日：2019-05-02

申请号：US15797361

申请日：2017-10-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Viachslav BABAYAN ,  Adolph Miller ALLEN ,  Bhargav CITLA ,  Ronald D. DEDORE ,  Vanessa FAUNE ,  Zhong Qiang HUA ,  Vaibhav SONI ,  Menglu WU

IPC: C23C14/34 ,  C23C14/06 ,  C23C14/35 ,  H01J37/34 ,  H01L21/02

Abstract: An apparatus and method of forming a dielectric film layer using a physical vapor deposition process include delivering a sputter gas to a substrate positioned in a processing region of a process chamber, the process chamber having a dielectric-containing sputter target, delivering an energy pulse to the sputter gas to create a sputtering plasma, the sputtering plasma being formed by energy pulses having an average voltage between about 800 volts and about 2000 volts and an average current between about 50 amps and about 300 amps at a frequency which is less than 50 kHz and greater than 5 kHz and directing the sputtering plasma toward the dielectric-containing sputter target to form an ionized species comprising dielectric material sputtered from the dielectric-containing sputter target, the ionized species forming a dielectric-containing film on the substrate.