PULSE SHAPE CONTROLLER FOR SPUTTER SOURCES
    3.
    发明申请

    公开(公告)号:US20180044781A1

    公开(公告)日:2018-02-15

    申请号:US15349433

    申请日:2016-11-11

    Abstract: Embodiments presented herein relate to a pulse control system for a substrate processing system. The pulse control system includes a power source, a system controller, and a pulse shape controller. The pulse shape controller is coupled to the power source and in communication with the system controller. The pulse shape controller includes a first switch assembly and a second switch assembly. The first switch assembly includes a first switch having a first end and a second end. The first switch is configurable between an open state and a closed state. The second switch assembly includes a second switch having a first end and a second end. The first switch is in the closed state and the second switch is in the open state. The first switch in the closed state is configured to allow a pulse supplied by the power source to transfer through the pulse shape controller.

    SYNC CONTROLLER FOR HIGH IMPULSE MAGNETRON SPUTTERING

    公开(公告)号:US20190088457A1

    公开(公告)日:2019-03-21

    申请号:US16043117

    申请日:2018-07-23

    Abstract: Embodiments presented herein relate to a method of and apparatus for processing a substrate in a semiconductor processing system. The method begins by initializing a pulse synchronization controller coupled between a pulse RF bias generator and a HIPIMs generator. A first timing signal is sent by the pulse synchronization controller to the pulse RF bias generator and the HIPIMs generator. A sputtering target and an RF electrode disposed in a substrate support is energized based on the first timing signal. The target and the electrode is de-energized based on an end of the timing signal. A second timing signal is sent by the pulse synchronization controller to the pulse RF bias generator and the electrode is energized and de-energized without energizing the target in response to the second timing signal.

    POST EXPOSURE PROCESSING APPARATUS
    10.
    发明申请

    公开(公告)号:US20210026257A1

    公开(公告)日:2021-01-28

    申请号:US17062326

    申请日:2020-10-02

    Abstract: Implementations described herein relate to apparatus for post exposure processing. More specifically, implementations described herein relate to field-guided post exposure process chambers and cool down/development chambers used on process platforms. In one implementation, a plurality of post exposure process chamber and cool/down development chamber pairs are positioned on a process platform in a stacked arrangement and utilize a shared plumbing module. In another implementation, a plurality of post exposure process chamber and cool down/development chambers are positioned on a process platform in a linear arrangement and each of the chambers utilize an individually dedicated plumbing module.

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