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1.发明公开公开(公告)号：US20240363407A1
公开(公告)日：2024-10-31
申请号：US18309669
申请日：2023-04-28
Applicant: Applied Materials, Inc.
Inventor： Jie ZHANG , Liqi WU , Cory LAFOLLETT , Tsung-Han YANG , Wei WENG , Qihao ZHU , Jiang LU , Rongjun WANG , Xianmin TANG
IPC: H01L21/768 , H01L21/02
CPC classification number: H01L21/76877 , H01L21/02274 , H01L21/76843 , H01L21/76865 , H01L21/76883
Abstract: Embodiments of the present disclosure generally relate to a method for forming an electrically conductive feature on a substrate. In one embodiment, the method includes forming a first conductive layer via physical vapor deposition (PVD) in an opening of a substrate. The first conductive layer has a thickness of less than 20 angstroms. The method further includes forming a second conductive layer via PVD on the first conductive layer. The first conductive layer and the second conductive layer are formed at a temperature of less than 50° C. The method further includes annealing at least a portion of the first conductive layer and the second conductive layer.
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2.发明申请公开(公告)号：US20220020577A1
公开(公告)日：2022-01-20
申请号：US17490840
申请日：2021-09-30
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong WANG , Joung Joo LEE , Fuhong ZHANG , Martin Lee RIKER , Keith A. MILLER , William FRUCHTERMAN , Rongjun WANG , Adolph Miller ALLEN , Shouyin ZHANG , Xianmin TANG
Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.
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公开(公告)号：US20220005679A1
公开(公告)日：2022-01-06
申请号：US16918513
申请日：2020-07-01
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong WANG , Jianxin LEI , Rongjun WANG
Abstract: Methods and apparatus for plasma chamber target for reducing defects in workpiece during dielectric sputtering are provided. For example, a dielectric sputter deposition target can comprise a dielectric compound having a predefined average grain size ranging from approximately 65 μm to 500 μm, wherein the dielectric compound is at least one of magnesium oxide or aluminum oxide.
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4.发明申请公开(公告)号：US20210071294A1
公开(公告)日：2021-03-11
申请号：US17101933
申请日：2020-11-23
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong WANG , Joung Joo LEE , Fuhong ZHANG , Martin Lee RIKER , Keith A. MILLER , William FRUCHTERMAN , Rongjun WANG , Adolph Miller ALLEN , Shouyin ZHANG , Xianmin TANG
Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a physical vapor deposition chamber includes: a body having an interior volume and a lid assembly including a target to be sputtered; a magnetron disposed above the target, wherein the magnetron is configured to rotate a plurality of magnets about a central axis of the physical vapor deposition chamber; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support a substrate; a collimator disposed between the target and the substrate support, the collimator having a central region having a first thickness and a peripheral region having a second thickness less than the first thickness; a first power source coupled to the target to electrically bias the target; and a second power source coupled to the substrate support to electrically bias the substrate support.
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公开(公告)号：US20200259078A1
公开(公告)日：2020-08-13
申请号：US16859350
申请日：2020-04-27
Applicant: Applied Materials, Inc.
Inventor： Lin XUE , Chi Hong CHING , Xiaodong WANG , Mahendra PAKALA , Rongjun WANG
Abstract: Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film stack to create a film stack with a sufficiently high perpendicular magnetic anisotropy (PMA). An iron containing oxide capping layer is utilized to generate the desirable PMA. By utilizing an iron containing oxide capping layer, thickness of the capping layer can be more finely controlled and reliance on boron at the interface of the magnetic storage layer and the capping layer is reduced.
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Patent Agency Ranking
公开(公告)号：US20200160884A1
公开(公告)日：2020-05-21
申请号：US16773232
申请日：2020-01-27
Applicant: Applied Materials, Inc.
Inventor： Lin XUE , Chi Hong CHING , Jaesoo AHN , Mahendra PAKALA , Rongjun WANG
IPC: G11B5/39 , H01L21/768 , G11C11/15 , G11B5/31 , G11C11/16
Abstract: Embodiments herein provide film stacks that include a buffer layer; a synthetic ferrimagnet (SyF) coupling layer; and a capping layer, wherein the capping layer comprises one or more layers, and wherein the capping layer, the buffer layer, the SyF coupling layer, or a combination thereof, is not fabricated from Ru.
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公开(公告)号：US20190051768A1
公开(公告)日：2019-02-14
申请号：US16154330
申请日：2018-10-08
Applicant: Applied Materials, Inc.
Inventor： Yong CAO , Daniel Lee DIEHL , Rongjun WANG , Xianmin TANG , Tai-chou Papo CHEN , Tingjun XU
Abstract: A method for forming an anti-reflective coating (ARC) includes positioning a substrate below a target and flowing a first gas to deposit a first portion of the graded ARC onto the substrate. The method includes gradually flowing a second gas to deposit a second portion of the graded ARC, and gradually flowing a third gas while simultaneously gradually decreasing the flow of the second gas to deposit a third portion of the graded ARC. The method also includes flowing the third gas after stopping the flow of the second gas to form a fourth portion of the graded ARC. In another embodiment a film stack having a substrate having a graded ARC disposed thereon is provided. The graded ARC includes a first portion, a second portion disposed on the first portion, a third portion disposed on the second portion, and a fourth portion disposed on the third portion.
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8.发明申请METHODS FOR FORMING STRUCTURES WITH DESIRED CRYSTALLINITY FOR MRAM APPLICATIONS 审中-公开用于形成具有用于MRAM应用的所需结构的结构的方法公开(公告)号：US20170018706A1
公开(公告)日：2017-01-19
申请号：US15199006
申请日：2016-06-30
Applicant: Applied Materials, Inc.
Inventor： Lin XUE , Jaesoo AHN , Mahendra PAKALA , Chi Hong CHING , Rongjun WANG
CPC classification number: H01L43/12 , H01F10/14 , H01F10/3222 , H01L43/08 , H01L43/10
Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in for spin-transfer-torque magnetoresistive random access memory (STT-MRAM) applications. In one embodiment, the method includes patterning a film stack having a tunneling barrier layer disposed between a magnetic reference layer and a magnetic storage layer disposed on a substrate to remove a portion of the film stack from the substrate until an upper surface of the substrate is exposed, forming a sidewall passivation layer on sidewalls of the patterned film stack and subsequently performing a thermal annealing process to the film stack.
Abstract translation: 本公开的实施例提供了用于在自旋传递 - 转矩磁阻随机存取存储器（STT-MRAM）应用中在衬底上制造磁性隧道结（MTJ）结构的方法和装置。 在一个实施例中，该方法包括图案化具有设置在磁参考层和设置在基板上的磁存储层之间的隧道势垒层的膜堆叠，以从基板去除一部分膜叠层，直到基板的上表面 暴露，在图案化膜堆叠的侧壁上形成侧壁钝化层，并随后对膜堆叠进行热退火处理。
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9.发明申请METHODS FOR DEPOSITING DIELECTRIC FILMS VIA PHYSICAL VAPOR DEPOSITION PROCESSES 有权通过物理蒸发沉积工艺沉积介电膜的方法公开(公告)号：US20160372319A1
公开(公告)日：2016-12-22
申请号：US14744688
申请日：2015-06-19
Applicant: APPLIED MATERIALS, INC.
Inventor： Weimin ZENG , Thanh X. NGUYEN , Yana CHENG , Yong CAO , Daniel Lee DIEHL , Srinivas GUGGILLA , Rongjun WANG , Xianmin TANG
IPC: H01L21/02
CPC classification number: H01L21/0234 , H01L21/0214 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/02266
Abstract: In some embodiments a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) depositing a dielectric layer to a first thickness atop a first surface of the substrate via a physical vapor deposition process; (b) providing a first plasma forming gas to a processing region of the physical vapor deposition process chamber, wherein the first plasma forming gas comprises hydrogen but not carbon; (c) providing a first amount of bias power to a substrate support to form a first plasma from the first plasma forming gas within the processing region of the physical vapor deposition process chamber; (d) exposing the dielectric layer to the first plasma; and (e) repeating (a)-(d) to deposit the dielectric film to a final thickness.
Abstract translation: 在一些实施例中，处理设置在物理气相沉积处理室中的衬底支架顶上的衬底的方法包括：（a）通过物理气相沉积工艺在介质的第一表面顶部沉积介电层至第一厚度; （b）向所述物理气相沉积处理室的处理区域提供第一等离子体形成气体，其中所述第一等离子体形成气体包括氢而不是碳; （c）向所述衬底支撑件提供第一量的偏置功率以从所述物理气相沉积处理室的处理区域内的所述第一等离子体形成气体形成第一等离子体; （d）将介电层暴露于第一等离子体; 和（e）重复（a） - （d）将电介质膜沉积到最终厚度。
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10.发明公开公开(公告)号：US20230402271A1
公开(公告)日：2023-12-14
申请号：US18237934
申请日：2023-08-25
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiaodong WANG , Joung Joo LEE , Fuhong ZHANG , Martin Lee RIKER , Keith A. MILLER , William FRUCHTERMAN , Rongjun WANG , Adolph Miller ALLEN , Shouyin ZHANG , Xianmin TANG
CPC classification number: H01J37/3458 , H01J37/345 , H01J37/3452 , H01J37/3411 , C23C14/345 , H01J37/3441 , H01J37/3402 , C23C14/351 , C23C14/54 , H01J37/3405 , H01J37/3447 , H01J37/3455
Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.
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