公开(公告)号：US20240363407A1

公开(公告)日：2024-10-31

申请号：US18309669

申请日：2023-04-28

申请人： Applied Materials, Inc.

发明人： Jie ZHANG ,  Liqi WU ,  Cory LAFOLLETT ,  Tsung-Han YANG ,  Wei WENG ,  Qihao ZHU ,  Jiang LU ,  Rongjun WANG ,  Xianmin TANG

IPC分类号： H01L21/768 ,  H01L21/02

CPC分类号： H01L21/76877 ,  H01L21/02274 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76883

摘要： Embodiments of the present disclosure generally relate to a method for forming an electrically conductive feature on a substrate. In one embodiment, the method includes forming a first conductive layer via physical vapor deposition (PVD) in an opening of a substrate. The first conductive layer has a thickness of less than 20 angstroms. The method further includes forming a second conductive layer via PVD on the first conductive layer. The first conductive layer and the second conductive layer are formed at a temperature of less than 50° C. The method further includes annealing at least a portion of the first conductive layer and the second conductive layer.

公开(公告)号：US20240186181A1

公开(公告)日：2024-06-06

申请号：US18074335

申请日：2022-12-02

申请人： Applied Materials, Inc.

发明人： Ge QU ,  Qihao ZHU ,  Zheng JU ,  Yang ZHOU ,  Jiajie CEN ,  Feng Q. LIU ,  Zhiyuan WU ,  Feng CHEN ,  Kevin KASHEFI ,  Xianmin TANG ,  Jeffrey W. ANTHIS ,  Mark Joseph SALY

IPC分类号： H01L21/768 ,  H01L21/3205

CPC分类号： H01L21/76849 ,  H01L21/32051 ,  H01L21/76877

摘要： Methods to deposit a metal cap for an interconnect are disclosed. In embodiments, a method comprises contacting the substrate with an alkyl halide and a ruthenium metal precursor to form a metal cap for an interconnect.