公开(公告)号：US20240186181A1

公开(公告)日：2024-06-06

申请号：US18074335

申请日：2022-12-02

Applicant: Applied Materials, Inc.

Inventor： Ge QU ,  Qihao ZHU ,  Zheng JU ,  Yang ZHOU ,  Jiajie CEN ,  Feng Q. LIU ,  Zhiyuan WU ,  Feng CHEN ,  Kevin KASHEFI ,  Xianmin TANG ,  Jeffrey W. ANTHIS ,  Mark Joseph SALY

IPC: H01L21/768 ,  H01L21/3205

CPC classification number: H01L21/76849 ,  H01L21/32051 ,  H01L21/76877

Abstract: Methods to deposit a metal cap for an interconnect are disclosed. In embodiments, a method comprises contacting the substrate with an alkyl halide and a ruthenium metal precursor to form a metal cap for an interconnect.

公开(公告)号：US20230212747A1

公开(公告)日：2023-07-06

申请号：US17985594

申请日：2022-11-11

Applicant: Applied Materials, Inc.

Inventor： Kevin KASHEFI ,  Joel Minster HUSTON ,  Michael Lee MCSWINEY ,  Carmen LEAL CERVANTES ,  Yongjin KIM ,  Drew William PHILLIPS ,  Mark Joseph SALY

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45553 ,  C23C16/45565 ,  C23C16/45557 ,  C23C16/458

Abstract: Methods and apparatus for self-assembled monolayer (SAM) deposition are provided herein. In some embodiments, an apparatus for self-assembled monolayer (SAM) deposition includes: a chamber enclosing a processing volume; a substrate support disposed in the chamber and configured to support a substrate in the processing volume; a gas distribution system coupled to the chamber and configured to distribute a process gas into the processing volume; a first SAM precursor source fluidly coupled to the gas distribution system to provide a first SAM precursor as a part of the process gas; and a second SAM precursor source fluidly coupled to the gas distribution system to provide a second SAM precursor, different than the first SAM precursor, as a part of the process gas, wherein the first and second SAM precursor sources are independently controllable to control a relative percentage of the first and second SAM precursors in the process gas with respect to each other.

公开(公告)号：US20230010568A1

公开(公告)日：2023-01-12

申请号：US17719502

申请日：2022-04-13

Applicant: Applied Materials, Inc.

Inventor： Suketu PARIKH ,  Mihaela A. BALSEANU ,  Bhaskar Jyoti BHUYAN ,  Ning LI ,  Mark Joseph SALY ,  Aaron Michael DANGERFIELD ,  David THOMPSON ,  Abhijit B. MALLICK

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate comprises a) removing oxide from a metal layer disposed in a dielectric layer on the substrate disposed in a processing chamber, b) selectively depositing a self-assembled monolayer (SAM) on the metal layer using atomic layer deposition, c) depositing a precursor while supplying water to form one of an aluminum oxide (AlO) layer on the dielectric layer or a low-k dielectric layer on the dielectric layer, d) supplying at least one of hydrogen (H2) or ammonia (NH3) to remove the self-assembled monolayer (SAM), and e) depositing one of a silicon oxycarbonitride (SiOCN) layer or a silicon nitride (SiN) layer atop the metal layer and the one of the aluminum oxide (AlO) layer on the dielectric layer or the low-k dielectric layer on the dielectric layer.