公开(公告)号：US20230010568A1

公开(公告)日：2023-01-12

申请号：US17719502

申请日：2022-04-13

Applicant: Applied Materials, Inc.

Inventor： Suketu PARIKH ,  Mihaela A. BALSEANU ,  Bhaskar Jyoti BHUYAN ,  Ning LI ,  Mark Joseph SALY ,  Aaron Michael DANGERFIELD ,  David THOMPSON ,  Abhijit B. MALLICK

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method of processing a substrate comprises a) removing oxide from a metal layer disposed in a dielectric layer on the substrate disposed in a processing chamber, b) selectively depositing a self-assembled monolayer (SAM) on the metal layer using atomic layer deposition, c) depositing a precursor while supplying water to form one of an aluminum oxide (AlO) layer on the dielectric layer or a low-k dielectric layer on the dielectric layer, d) supplying at least one of hydrogen (H2) or ammonia (NH3) to remove the self-assembled monolayer (SAM), and e) depositing one of a silicon oxycarbonitride (SiOCN) layer or a silicon nitride (SiN) layer atop the metal layer and the one of the aluminum oxide (AlO) layer on the dielectric layer or the low-k dielectric layer on the dielectric layer.

公开(公告)号：US20240026527A1

公开(公告)日：2024-01-25

申请号：US18224455

申请日：2023-07-20

Applicant: Applied Materials, Inc.

Inventor： Geetika BAJAJ ,  Supriya GHOSH ,  Susmit Singha ROY ,  Darshan THAKARE ,  Gopi Chandran RAMACHANDRAN ,  Bhaskar Jyoti BHUYAN ,  Abhijit B. MALLICK

IPC: C23C16/04 ,  C23C16/30 ,  C23C16/56

CPC classification number: C23C16/045 ,  C23C16/30 ,  C23C16/56

Abstract: A method of forming a high aspect ratio structure within a 3D NAND structure is provided. The method includes delivering a precursor to a high aspect ratio opening disposed within a multilayer stack having two or more alternating layers. The precursor is selected from the group consisting of a diaminosilane, an aminosilane, and a combination thereof. The method includes delivering an oxygen-containing compound to the high aspect ratio opening. The precursor and the oxygen-containing compound are alternated cyclically to fill the high aspect ratio opening.

公开(公告)号：US20210215664A1

公开(公告)日：2021-07-15

申请号：US16738629

申请日：2020-01-09

Applicant: Applied Materials, Inc.

Inventor： Mark J. SALY ,  Keenan Navarre WOODS ,  Joseph R. JOHNSON ,  Bhaskar Jyoti BHUYAN ,  William J. DURAND ,  Michael CHUDZIK ,  Raghav SREENIVASAN ,  Roger QUON

IPC: G01N33/487 ,  C12Q1/6869 ,  B82Y15/00

Abstract: Embodiments of the present disclosure provide dual pore sensors and methods for producing these dual pore sensors. The method includes forming a film stack, where the film stack contains two silicon layers and two membrane layers, and then etching the film stack to produce a channel extending therethrough and having two reservoirs and two nanopores. The method also includes depositing a oxide layer on inner surfaces of the reservoirs and nanopores, depositing a dielectric layer on the oxide layer, and forming a metal contact extending through a portion of the stack. The method further includes etching the dielectric layers to form wells, etching the first silicon layer to reveal the protective oxide layer deposited on the inner surfaces of a reservoir, and etching the protective oxide layer deposited on the inner surfaces of the reservoirs and the nanopores.