公开(公告)号：US20200088713A1

公开(公告)日：2020-03-19

申请号：US16517121

申请日：2019-07-19

Applicant: Applied Materials, Inc.

Inventor： William J. DURAND ,  Joseph R. JOHNSON ,  Roger QUON

IPC: G01N33/487

Abstract: Methods are provided for manufacturing well-controlled, solid-state nanopores in close proximity and arrays thereof. In one embodiment, a plurality of wells and one or more channels are formed in a substrate. Each of the wells is adjacent a channel. A portion of a sidewall of each well is exposed. The portion of exposed sidewall is nearest to the adjacent channel. The portion of the exposed sidewall of each well is laterally etched towards the adjacent channel. A nanopore is formed connecting the wells to an adjacent channel.

公开(公告)号：US20210215664A1

公开(公告)日：2021-07-15

申请号：US16738629

申请日：2020-01-09

Applicant: Applied Materials, Inc.

Inventor： Mark J. SALY ,  Keenan Navarre WOODS ,  Joseph R. JOHNSON ,  Bhaskar Jyoti BHUYAN ,  William J. DURAND ,  Michael CHUDZIK ,  Raghav SREENIVASAN ,  Roger QUON

IPC: G01N33/487 ,  C12Q1/6869 ,  B82Y15/00

Abstract: Embodiments of the present disclosure provide dual pore sensors and methods for producing these dual pore sensors. The method includes forming a film stack, where the film stack contains two silicon layers and two membrane layers, and then etching the film stack to produce a channel extending therethrough and having two reservoirs and two nanopores. The method also includes depositing a oxide layer on inner surfaces of the reservoirs and nanopores, depositing a dielectric layer on the oxide layer, and forming a metal contact extending through a portion of the stack. The method further includes etching the dielectric layers to form wells, etching the first silicon layer to reveal the protective oxide layer deposited on the inner surfaces of a reservoir, and etching the protective oxide layer deposited on the inner surfaces of the reservoirs and the nanopores.