公开(公告)号：US20240222142A1

公开(公告)日：2024-07-04

申请号：US18089632

申请日：2022-12-28

Applicant: Applied Materials, Inc.

Inventor： Tapash CHAKRABORTY ,  Steven VERHAVERBEKE ,  Han-Wen CHEN ,  Kyuil CHO ,  Kent ZHAO ,  Gopi Chandran RAMACHANDRAN

IPC: H01L21/48 ,  H01L23/538 ,  H10B80/00

CPC classification number: H01L21/486 ,  H01L23/5384 ,  H01L23/5389 ,  H10B80/00

Abstract: Semiconductor packages and methods for metallization of non-conducting surfaces for fabricating semiconductor packages are provided. In an embodiment, the method includes depositing an adhesion layer on a polymeric surface by an electroless deposition process. The polymeric surface defines a sidewall of a through-hole via and the adhesion layer comprises a cobalt alloy or a nickel alloy. The method further includes depositing a copper seed layer on the adhesion layer by an immersion plating process. The copper seed layer displaces a portion of the adhesion layer. The method further includes filling the through-hole via with a copper containing layer.

公开(公告)号：US20240026527A1

公开(公告)日：2024-01-25

申请号：US18224455

申请日：2023-07-20

Applicant: Applied Materials, Inc.

Inventor： Geetika BAJAJ ,  Supriya GHOSH ,  Susmit Singha ROY ,  Darshan THAKARE ,  Gopi Chandran RAMACHANDRAN ,  Bhaskar Jyoti BHUYAN ,  Abhijit B. MALLICK

IPC: C23C16/04 ,  C23C16/30 ,  C23C16/56

CPC classification number: C23C16/045 ,  C23C16/30 ,  C23C16/56

Abstract: A method of forming a high aspect ratio structure within a 3D NAND structure is provided. The method includes delivering a precursor to a high aspect ratio opening disposed within a multilayer stack having two or more alternating layers. The precursor is selected from the group consisting of a diaminosilane, an aminosilane, and a combination thereof. The method includes delivering an oxygen-containing compound to the high aspect ratio opening. The precursor and the oxygen-containing compound are alternated cyclically to fill the high aspect ratio opening.

公开(公告)号：US20240145242A1

公开(公告)日：2024-05-02

申请号：US18384688

申请日：2023-10-27

Applicant: Applied Materials, Inc.

Inventor： Geetika BAJAJ ,  Srobona SEN ,  Xuebin LI ,  Joe MARGETIS ,  Provas PAL ,  Gopi Chandran RAMACHANDRAN

IPC: H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/02642 ,  H01L21/02052 ,  H01L21/02532 ,  H01L21/32055

Abstract: Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a blocking layer of molecules is used to achieve selective epitaxial deposition. In one implementation, a method of processing a mixed-surface substrate comprising an exposed dielectric material and an exposed silicon-based material is provided. The method comprises depositing a blocking layer on the exposed dielectric material and epitaxially and selectively depositing a silicon-containing material layer on the exposed silicon-based material at a temperature of 400 degrees Celsius or greater. The method further involves removing the blocking layer from the dielectric material.

公开(公告)号：US20230416909A1

公开(公告)日：2023-12-28

申请号：US18336157

申请日：2023-06-16

Applicant: Applied Materials, Inc.

Inventor： Geetika BAJAJ ,  Seshadri GANGULI ,  Gopi Chandran RAMACHANDRAN ,  Srinivas GANDIKOTA

IPC: C23C16/40 ,  C23C16/04

CPC classification number: C23C16/402 ,  C23C16/045

Abstract: Embodiments of the disclosure provide a method of forming a dielectric film in trenches of a substrate. The utilization of the ALD process and introduction of an inhibitor material onto features defining the trenches and into the trenches provides for suppression of forming the dielectric film near the top surface of the features in the trenches. The dielectric film is formed via an ALD process. The ALD process includes sequentially exposing the substrate to an inhibitor material, a first precursor, a purge gas, an oxygen-containing precursor, and the purge gas during an ALD cycle, and repeating the ALD cycle to deposit the dielectric film.