公开(公告)号：US20240145242A1

公开(公告)日：2024-05-02

申请号：US18384688

申请日：2023-10-27

Applicant: Applied Materials, Inc.

Inventor： Geetika BAJAJ ,  Srobona SEN ,  Xuebin LI ,  Joe MARGETIS ,  Provas PAL ,  Gopi Chandran RAMACHANDRAN

IPC: H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/02642 ,  H01L21/02052 ,  H01L21/02532 ,  H01L21/32055

Abstract: Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a blocking layer of molecules is used to achieve selective epitaxial deposition. In one implementation, a method of processing a mixed-surface substrate comprising an exposed dielectric material and an exposed silicon-based material is provided. The method comprises depositing a blocking layer on the exposed dielectric material and epitaxially and selectively depositing a silicon-containing material layer on the exposed silicon-based material at a temperature of 400 degrees Celsius or greater. The method further involves removing the blocking layer from the dielectric material.