公开(公告)号：US20160372319A1

公开(公告)日：2016-12-22

申请号：US14744688

申请日：2015-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Weimin ZENG ,  Thanh X. NGUYEN ,  Yana CHENG ,  Yong CAO ,  Daniel Lee DIEHL ,  Srinivas GUGGILLA ,  Rongjun WANG ,  Xianmin TANG

IPC: H01L21/02

CPC classification number: H01L21/0234 ,  H01L21/0214 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02266

Abstract: In some embodiments a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) depositing a dielectric layer to a first thickness atop a first surface of the substrate via a physical vapor deposition process; (b) providing a first plasma forming gas to a processing region of the physical vapor deposition process chamber, wherein the first plasma forming gas comprises hydrogen but not carbon; (c) providing a first amount of bias power to a substrate support to form a first plasma from the first plasma forming gas within the processing region of the physical vapor deposition process chamber; (d) exposing the dielectric layer to the first plasma; and (e) repeating (a)-(d) to deposit the dielectric film to a final thickness.

Abstract translation: 在一些实施例中，处理设置在物理气相沉积处理室中的衬底支架顶上的衬底的方法包括：（a）通过物理气相沉积工艺在介质的第一表面顶部沉积介电层至第一厚度; （b）向所述物理气相沉积处理室的处理区域提供第一等离子体形成气体，其中所述第一等离子体形成气体包括氢而不是碳; （c）向所述衬底支撑件提供第一量的偏置功率以从所述物理气相沉积处理室的处理区域内的所述第一等离子体形成气体形成第一等离子体; （d）将介电层暴露于第一等离子体; 和（e）重复（a） - （d）将电介质膜沉积到最终厚度。

公开(公告)号：US20180142343A1

公开(公告)日：2018-05-24

申请号：US15814497

申请日：2017-11-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Weimin ZENG ,  Yong CAO ,  Daniel Lee DIEHL ,  Huixiong DAI ,  Khoi PHAN ,  Christopher NGAI ,  Rongjun WANG ,  Xianmin TANG

IPC: C23C14/35 ,  C23C14/22 ,  C23C14/14 ,  C23C14/54

CPC classification number: C23C14/35 ,  C23C14/0057 ,  C23C14/042 ,  C23C14/06 ,  C23C14/14 ,  C23C14/228 ,  C23C14/54 ,  H01J37/34 ,  H01J2237/332

Abstract: In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas and a hydrogen-containing gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein adjusting the flow rate of the hydrogen containing gas tunes the optical properties of the deposited amorphous silicon layer.

公开(公告)号：US20200227294A1

公开(公告)日：2020-07-16

申请号：US16249653

申请日：2019-01-16

Applicant: Applied Materials, Inc.

Inventor： Mingwei ZHU ,  Zihao YANG ,  Nag B. PATIBANDLA ,  Daniel DIEHL ,  Yong CAO ,  Weimin ZENG ,  Renjing ZHENG ,  Edward BUDIARTO ,  Surender Kumar GURUSAMY ,  Todd EGAN ,  Niranjan R. KHASGIWALE

IPC: H01L21/67 ,  G01N21/21 ,  H01L21/687

Abstract: A method and apparatus for forming an optical stack having uniform and accurate layers is provided. A processing tool used to form the optical stack comprises, within an enclosed environment, a first transfer chamber, an on-board metrology unit, and a second transfer chamber. A first plurality of processing chambers is coupled to the first transfer chamber or the second transfer chamber. The on-board metrology unit is disposed between the first transfer chamber and the second transfer chamber. The on-board metrology unit is configured to measure one or more optical properties of the individual layers of the optical stack without exposing the layers to an ambient environment.