公开(公告)号：US20180261720A1

公开(公告)日：2018-09-13

申请号：US15980583

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Mingwei ZHU ,  Nag B. PATIBANDLA ,  Rongjun WANG ,  Daniel Lee DIEHL ,  Vivek AGRAWAL ,  Anantha Subramani

IPC: H01L33/12 ,  H01L29/20 ,  H01L33/00 ,  H01J37/34 ,  H01J37/32 ,  H01L31/18

CPC classification number: H01L33/12 ,  H01J37/32467 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/347 ,  H01L29/2003 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  Y02E10/544

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

公开(公告)号：US20140327117A1

公开(公告)日：2014-11-06

申请号：US14269010

申请日：2014-05-02

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis BENCHER ,  Daniel Lee DIEHL ,  Huixiong DAI ,  Yong CAO ,  Tingjun XU ,  Weimin (Wilson) ZENG ,  Peng XIE

IPC: H01L21/033

CPC classification number: H01L21/0337 ,  C23C14/0042 ,  C23C14/06 ,  C23C14/14 ,  C23C14/351 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02266 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144

Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

Abstract translation: 本文的实施方案提供了用于形成PVD氧化硅或富硅氧化物或PVD SiN或富硅SiN或富SiC或富硅SiC的方法或前述组合，包括将氢控制掺入到迄今为止参考的化合物 作为SiO x N y C z：H w，其中w，x，y和z可以在0％至100％的浓度范围内变化，作为具有与曝光波长下的光致抗蚀剂基本匹配的光学性质的硬掩模。 因此使相对于光致抗蚀剂光学平坦化的硬掩模。 这允许在硬掩模中的多个序列的光刻和蚀刻，而光致抗蚀剂基本上保持没有光学形貌或反射率变化。

公开(公告)号：US20210123156A1

公开(公告)日：2021-04-29

申请号：US17016614

申请日：2020-09-10

Applicant: Applied Materials, Inc.

Inventor： Zihao YANG ,  Mingwei ZHU ,  Nag B. PATIBANDLA ,  Yong CAO ,  Shumao ZHANG ,  Zhebo CHEN ,  Jean LU ,  Daniel Lee DIEHL ,  Xianmin TANG

IPC: C30B23/00 ,  C30B29/40 ,  C30B33/04 ,  C23C14/06 ,  C23C14/34 ,  C23C14/54 ,  C23C14/58

Abstract: Embodiments described herein include a method for depositing a material layer on a substrate while controlling a bow of the substrate and a surface roughness of the material layer. A bias applied to the substrate while the material layer is deposited is adjusted to control the bow of the substrate. A bombardment process is performed on the material layer to improve the surface roughness of the material layer. The bias and bombardment process improve a uniformity of the material layer and reduce an occurrence of the material layer cracking due to the bow of the substrate.

公开(公告)号：US20150348773A1

公开(公告)日：2015-12-03

申请号：US14410790

申请日：2013-07-01

Applicant: Applied Materials, Inc.

Inventor： Mingwei ZHU ,  Nag B. PATIBANDLA ,  Rongjun WANG ,  Vivek AGRAWAL ,  Anantha SUBRAMANI ,  Daniel Lee DIEHL ,  Xianmin TANG

IPC: H01L21/02 ,  H01L21/322 ,  H01J37/34 ,  H01L21/3065

CPC classification number: H01L21/0254 ,  C23C14/0036 ,  C23C14/0641 ,  H01J37/3426 ,  H01J37/3467 ,  H01L21/02458 ,  H01L21/02631 ,  H01L21/3065 ,  H01L21/3228

Abstract: Embodiments of the invention described herein generally relate to an apparatus and methods for forming high quality buffer layers and Group III-V layers that are used to form a useful semiconductor device, such as a power device, light emitting diode (LED), laser diode (LD) or other useful device. Embodiments of the invention may also include an apparatus and methods for forming high quality buffer layers, Group III-V layers and electrode layers that are used to form a useful semiconductor device. In some embodiments, an apparatus and method includes the use of one or more cluster tools having one or more physical vapor deposition (PVD) chambers that are adapted to deposit a high quality aluminum nitride (AlN) buffer layer that has a high crystalline orientation on a surface of a plurality of substrates at the same time.

Abstract translation: 本文描述的本发明的实施例一般涉及用于形成高质量缓冲层的装置和方法，以及用于形成有用的半导体器件的III-V层，例如功率器件，发光二极管（LED），激光二极管 （LD）或其他有用的装置。 本发明的实施例还可以包括用于形成用于形成有用的半导体器件的高质量缓冲层，III-V族层和电极层的装置和方法。 在一些实施例中，装置和方法包括使用具有一个或多个物理气相沉积（PVD）室的一个或多个簇工具，其适于将具有高结晶取向的高质量氮化铝（AlN）缓冲层沉积在 同时是多个基板的表面。

公开(公告)号：US20150132551A1

公开(公告)日：2015-05-14

申请号：US14531549

申请日：2014-11-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Yong CAO ,  Daniel Lee DIEHL ,  Rongjun WANG ,  Xianmin TANG ,  Tai-Chou Papo CHEN ,  Tingjun XU

IPC: H01L31/0216 ,  H01L31/18 ,  H01L31/032 ,  C23C14/35

CPC classification number: H01L31/02161 ,  C23C14/0042 ,  C23C14/0084 ,  C23C14/0652 ,  C23C14/0676 ,  C23C14/35 ,  G02B1/115 ,  H01L31/02168 ,  H01L31/18 ,  Y02E10/50 ,  Y10T428/24942

Abstract: A method for forming an anti-reflective coating (ARC) includes positioning a substrate below a target and flowing a first gas to deposit a first portion of the graded ARC onto the substrate. The method includes gradually flowing a second gas to deposit a second portion of the graded ARC, and gradually flowing a third gas while simultaneously gradually decreasing the flow of the second gas to deposit a third portion of the graded ARC. The method also includes flowing the third gas after stopping the flow of the second gas to form a fourth portion of the graded ARC. In another embodiment a film stack having a substrate having a graded ARC disposed thereon is provided. The graded ARC includes a first portion, a second portion disposed on the first portion, a third portion disposed on the second portion, and a fourth portion disposed on the third portion.

Abstract translation: 用于形成抗反射涂层（ARC）的方法包括将基底定位在靶材下方并流动第一气体以将渐变ARC的第一部分沉积到基底上。 该方法包括逐渐流动第二气体以沉积分级ARC的第二部分，并逐渐流动第三气体，同时逐渐减少第二气体的流动以沉积渐变ARC的第三部分。 该方法还包括在停止第二气体的流动之后流动第三气体以形成分级ARC的第四部分。 在另一个实施例中，提供了具有设置在其上的具有分级ARC的基板的薄膜叠层。 分级ARC包括第一部分，设置在第一部分上的第二部分，设置在第二部分上的第三部分和设置在第三部分上的第四部分。

公开(公告)号：US20200273705A1

公开(公告)日：2020-08-27

申请号：US16800351

申请日：2020-02-25

Applicant: Applied Materials, Inc.

Inventor： Tejinder SINGH ,  Suketu Arun PARIKH ,  Daniel Lee DIEHL ,  Michael Anthony STOLFI ,  Jothilingam RAMALINGAM ,  Yong CAO ,  Lifan YAN ,  Chi-I LANG ,  Hoyung David HWANG

IPC: H01L21/033 ,  H01L21/311

Abstract: Methods for forming a film stack comprising a hardmask layer and etching such hardmask layer to form features in the film stack are provided. The methods described herein facilitate profile and dimension control of features through a proper profile management scheme formed in the film stack. In one or more embodiments, a method for etching a hardmask layer includes forming a hardmask layer on a substrate, where the hardmask layer contains a metal-containing material containing a metal element having an atomic number greater than 28, supplying an etching gas mixture to the substrate, and etching the hardmask layer exposed by a photoresist layer.

公开(公告)号：US20190051768A1

公开(公告)日：2019-02-14

申请号：US16154330

申请日：2018-10-08

Applicant: Applied Materials, Inc.

Inventor： Yong CAO ,  Daniel Lee DIEHL ,  Rongjun WANG ,  Xianmin TANG ,  Tai-chou Papo CHEN ,  Tingjun XU

IPC: H01L31/0216 ,  C23C14/35 ,  C23C14/00 ,  H01L31/18 ,  G02B1/115 ,  C23C14/06

Abstract: A method for forming an anti-reflective coating (ARC) includes positioning a substrate below a target and flowing a first gas to deposit a first portion of the graded ARC onto the substrate. The method includes gradually flowing a second gas to deposit a second portion of the graded ARC, and gradually flowing a third gas while simultaneously gradually decreasing the flow of the second gas to deposit a third portion of the graded ARC. The method also includes flowing the third gas after stopping the flow of the second gas to form a fourth portion of the graded ARC. In another embodiment a film stack having a substrate having a graded ARC disposed thereon is provided. The graded ARC includes a first portion, a second portion disposed on the first portion, a third portion disposed on the second portion, and a fourth portion disposed on the third portion.

公开(公告)号：US20160372319A1

公开(公告)日：2016-12-22

申请号：US14744688

申请日：2015-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Weimin ZENG ,  Thanh X. NGUYEN ,  Yana CHENG ,  Yong CAO ,  Daniel Lee DIEHL ,  Srinivas GUGGILLA ,  Rongjun WANG ,  Xianmin TANG

IPC: H01L21/02

CPC classification number: H01L21/0234 ,  H01L21/0214 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02266

Abstract: In some embodiments a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) depositing a dielectric layer to a first thickness atop a first surface of the substrate via a physical vapor deposition process; (b) providing a first plasma forming gas to a processing region of the physical vapor deposition process chamber, wherein the first plasma forming gas comprises hydrogen but not carbon; (c) providing a first amount of bias power to a substrate support to form a first plasma from the first plasma forming gas within the processing region of the physical vapor deposition process chamber; (d) exposing the dielectric layer to the first plasma; and (e) repeating (a)-(d) to deposit the dielectric film to a final thickness.

Abstract translation: 在一些实施例中，处理设置在物理气相沉积处理室中的衬底支架顶上的衬底的方法包括：（a）通过物理气相沉积工艺在介质的第一表面顶部沉积介电层至第一厚度; （b）向所述物理气相沉积处理室的处理区域提供第一等离子体形成气体，其中所述第一等离子体形成气体包括氢而不是碳; （c）向所述衬底支撑件提供第一量的偏置功率以从所述物理气相沉积处理室的处理区域内的所述第一等离子体形成气体形成第一等离子体; （d）将介电层暴露于第一等离子体; 和（e）重复（a） - （d）将电介质膜沉积到最终厚度。

公开(公告)号：US20160042951A1

公开(公告)日：2016-02-11

申请号：US14878514

申请日：2015-10-08

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis BENCHER ,  Daniel Lee DIEHL ,  Huixiong DAI ,  Yong CAO ,  Tingjun XU ,  Weimin (Wilson) ZENG ,  Peng XIE

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01L21/308 ,  C23C14/35 ,  C23C14/14

CPC classification number: H01L21/0337 ,  C23C14/0042 ,  C23C14/06 ,  C23C14/14 ,  C23C14/351 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02266 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144

Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

Abstract translation: 本文的实施方案提供了用于形成PVD氧化硅或富硅氧化物或PVD SiN或富硅SiN或富SiC或富硅SiC的方法或前述组合，包括将氢控制掺入到迄今为止参考的化合物 作为SiO x N y C z：H w，其中w，x，y和z可以在0％至100％的浓度范围内变化，作为具有与曝光波长下的光致抗蚀剂基本匹配的光学性质的硬掩模。 因此使相对于光致抗蚀剂光学平坦化的硬掩模。 这允许在硬掩模中的多个序列的光刻和蚀刻，而光致抗蚀剂基本上保持没有光学形貌或反射率变化。

公开(公告)号：US20240003000A1

公开(公告)日：2024-01-04

申请号：US18201055

申请日：2023-05-23

Applicant: Applied Materials, Inc.

Inventor： Mingwei ZHU ,  Zihao YANG ,  Nag B. PATIBANDLA ,  Ludovic GODET ,  Yong CAO ,  Daniel Lee DIEHL ,  Zhebo CHEN

IPC: C23C14/56 ,  C23C14/06 ,  C23C14/34 ,  H01J37/34

CPC classification number: C23C14/564 ,  C23C14/0641 ,  C23C14/34 ,  H01J2237/24514 ,  H01J37/3441 ,  H01J37/3405 ,  H01J37/3464

Abstract: A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.