公开(公告)号：US20240234655A9

公开(公告)日：2024-07-11

申请号：US18490847

申请日：2023-10-20

Applicant: Applied Materials, Inc.

Inventor： Zhiyong LI ,  Sivapackia GANAPATHIAPPAN ,  Mingwei ZHU ,  Nag B. PATIBANDLA ,  Hou T. NG ,  Lisong XU ,  Ding KAI ,  Kulandaivelu SIVANANDAN

IPC: H01L33/60 ,  H01L25/16

CPC classification number: H01L33/60 ,  H01L25/167 ,  H01L2933/0058

Abstract: Embodiments of the present disclosure generally relate to LED pixels and methods of fabricating LED pixels. A device includes a backplane, at least three LEDs disposed on the backplane, subpixel isolation (SI) structures disposed defining wells of at least three subpixels, a reflection material is disposed on sidewalls and a top surface of the SI structures, at least three of the subpixels have a color conversion material disposed in the wells, an encapsulation layer disposed over the subpixel isolation structures and the subpixels, a light filter layer disposed over the encapsulation layer and micro-lenses disposed over the light filter layer and over each of the wells of the subpixels.

公开(公告)号：US20240145624A1

公开(公告)日：2024-05-02

申请号：US18493426

申请日：2023-10-24

Applicant: Applied Materials, Inc.

Inventor： Peiwen LIU ,  Hyunsung BANG ,  Jianfeng SUN ,  Lisong XU ,  Zhiyong LI ,  Sivapackia GANAPATHIAPPAN ,  Mingwei ZHU ,  Hou T. NG ,  Nag. B. PATIBANDLA

IPC: H01L33/06 ,  H01L33/50 ,  H01L33/52 ,  H01L33/58

CPC classification number: H01L33/06 ,  H01L33/502 ,  H01L33/52 ,  H01L33/58 ,  H01L2933/0041

Abstract: A pixel herein includes a color panel, a light emitting diode (LED) panel, and an adhesive layer disposed between the color panel and the LED panel. The color panel includes a transparent layer, a plurality of sub-pixel isolation structures, and a plurality of black matrix structures disposed between the plurality of sub-pixel isolation structures and the transparent layer. The sub-pixel isolation structures define a plurality color conversion wells of plurality of sub-pixels. A color conversion material is disposed in the color conversion well. The plurality of black matrix structures define a plurality of color resist wells of the plurality of sub-pixels. A color resist is disposed in the color resist wells. The LED panel includes a plurality of micro-LEDs disposed on a backplane. The plurality of micro-LEDs correspond to a sub-pixel.

公开(公告)号：US20240003000A1

公开(公告)日：2024-01-04

申请号：US18201055

申请日：2023-05-23

Applicant: Applied Materials, Inc.

Inventor： Mingwei ZHU ,  Zihao YANG ,  Nag B. PATIBANDLA ,  Ludovic GODET ,  Yong CAO ,  Daniel Lee DIEHL ,  Zhebo CHEN

IPC: C23C14/56 ,  C23C14/06 ,  C23C14/34 ,  H01J37/34

CPC classification number: C23C14/564 ,  C23C14/0641 ,  C23C14/34 ,  H01J2237/24514 ,  H01J37/3441 ,  H01J37/3405 ,  H01J37/3464

Abstract: A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.

公开(公告)号：US20230360890A1

公开(公告)日：2023-11-09

申请号：US18131997

申请日：2023-04-07

Applicant: Applied Materials, Inc.

Inventor： Yue CHEN ,  Jinyu LU ,  Yongmei CHEN ,  Jinxin FU ,  Zihao YANG ,  Mingwei ZHU ,  Takashi KURATOMI ,  Rami HOURANI ,  Ludovic GODET ,  Qun JING ,  Jingyi YANG ,  David Masayuki ISHIKAWA

IPC: H01J37/32 ,  H01J7/02

CPC classification number: H01J37/32449 ,  H01J37/32458 ,  H01J37/32724 ,  H01J7/02 ,  H01J2237/332 ,  H01J2237/334

Abstract: A method of processing an optical device is provided, including: positioning an optical device on a substrate support in an interior volume of a process chamber, the optical device including an optical device substrate and a plurality of optical device structures formed over the optical device substrate, each optical device structure including a bulk region formed of silicon carbide and one or more surface regions formed of silicon oxycarbide. The method further includes providing one or more process gases to the interior volume of the process chamber, and generating a plasma of the one or more process gases in the interior volume for a first time period when the optical device is on the substrate support, and stopping the plasma after the first time period. A carbon content of the one or more surface regions of each optical device structure is reduced by at least 50% by the plasma.

公开(公告)号：US20240136485A1

公开(公告)日：2024-04-25

申请号：US18490847

申请日：2023-10-19

Applicant: Applied Materials, Inc.

Inventor： Zhiyong LI ,  Sivapackia GANAPATHIAPPAN ,  Mingwei ZHU ,  Nag B. PATIBANDLA ,  Hou T. NG ,  Lisong XU ,  Ding KAI ,  Kulandaivelu SIVANANDAN

IPC: H01L33/60 ,  H01L25/16

CPC classification number: H01L33/60 ,  H01L25/167 ,  H01L2933/0058

Abstract: Embodiments of the present disclosure generally relate to LED pixels and methods of fabricating LED pixels. A device includes a backplane, at least three LEDs disposed on the backplane, subpixel isolation (SI) structures disposed defining wells of at least three subpixels, a reflection material is disposed on sidewalls and a top surface of the SI structures, at least three of the subpixels have a color conversion material disposed in the wells, an encapsulation layer disposed over the subpixel isolation structures and the subpixels, a light filter layer disposed over the encapsulation layer and micro-lenses disposed over the light filter layer and over each of the wells of the subpixels.

公开(公告)号：US20230257868A1

公开(公告)日：2023-08-17

申请号：US18169065

申请日：2023-02-14

Applicant: Applied Materials, Inc.

Inventor： Zihao YANG ,  Mingwei ZHU ,  Bharatwaj RAMAKRISHNAN ,  Rongjun WANG ,  Robert Jan VISSER ,  Patibandla NAG

IPC: C23C14/34 ,  C23C14/58 ,  C23C14/54 ,  C23C14/08 ,  G03F7/00

CPC classification number: C23C14/3464 ,  C23C14/5806 ,  C23C14/541 ,  C23C14/082 ,  C23C14/086 ,  C23C14/085 ,  C23C14/5873 ,  G03F7/0035

Abstract: Embodiments described herein relate to a method of fabricating a perovskite film device. The method includes heating and degassing a substrate within a processing system; depositing a first perovskite film layer over a surface of the substrate using multi-cathode sputtering deposition within a processing chamber; depositing a second perovskite film layer over the first perovskite film layer using multi-cathode sputtering deposition within a processing chamber; and annealing the substrate with the first perovskite film layer and second perovskite film layer disposed thereon. The first perovskite film layer includes a first perovskite material. The second perovskite film layer includes a second perovskite material.

公开(公告)号：US20180261720A1

公开(公告)日：2018-09-13

申请号：US15980583

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Mingwei ZHU ,  Nag B. PATIBANDLA ,  Rongjun WANG ,  Daniel Lee DIEHL ,  Vivek AGRAWAL ,  Anantha Subramani

IPC: H01L33/12 ,  H01L29/20 ,  H01L33/00 ,  H01J37/34 ,  H01J37/32 ,  H01L31/18

CPC classification number: H01L33/12 ,  H01J37/32467 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/347 ,  H01L29/2003 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  Y02E10/544

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

公开(公告)号：US20250056920A1

公开(公告)日：2025-02-13

申请号：US18797189

申请日：2024-08-07

Applicant: Applied Materials, Inc.

Inventor： Peiwen LIU ,  Uma SRIDHAR ,  Hyunsung BANG ,  Kai DING ,  Jeffrey L. FRANKLIN ,  Mingwei ZHU ,  Hou T. NG ,  Nag B. PATIBANDLA

IPC: H01L33/00 ,  H01L25/075

Abstract: The present disclosure provides devices and methods for repairing dice during micro-LED display fabrication. The devices include a backplane. The backplane has a plurality of backplane electrodes. Each backplane electrode includes a first material. A plurality of micro-LEDs having a plurality of micro-LED electrodes is included in the device. Each micro-LED electrode includes a second material. Each micro-LED electrode is bonded to each backplane electrode with an alloy of the first material and the second material therebetween. At least one backplane electrode is bonded to the micro-LED electrode via a repair material. The device includes a plurality of subpixel isolation (SI) structures formed over the backplane. The SI structures define wells of sub-pixels. Each well includes a respective micro-LED between adjacent SI structures. The sub-pixels have a color conversion material disposed in the wells.

公开(公告)号：US20210123156A1

公开(公告)日：2021-04-29

申请号：US17016614

申请日：2020-09-10

Applicant: Applied Materials, Inc.

Inventor： Zihao YANG ,  Mingwei ZHU ,  Nag B. PATIBANDLA ,  Yong CAO ,  Shumao ZHANG ,  Zhebo CHEN ,  Jean LU ,  Daniel Lee DIEHL ,  Xianmin TANG

IPC: C30B23/00 ,  C30B29/40 ,  C30B33/04 ,  C23C14/06 ,  C23C14/34 ,  C23C14/54 ,  C23C14/58

Abstract: Embodiments described herein include a method for depositing a material layer on a substrate while controlling a bow of the substrate and a surface roughness of the material layer. A bias applied to the substrate while the material layer is deposited is adjusted to control the bow of the substrate. A bombardment process is performed on the material layer to improve the surface roughness of the material layer. The bias and bombardment process improve a uniformity of the material layer and reduce an occurrence of the material layer cracking due to the bow of the substrate.

公开(公告)号：US20200227294A1

公开(公告)日：2020-07-16

申请号：US16249653

申请日：2019-01-16

Applicant: Applied Materials, Inc.

Inventor： Mingwei ZHU ,  Zihao YANG ,  Nag B. PATIBANDLA ,  Daniel DIEHL ,  Yong CAO ,  Weimin ZENG ,  Renjing ZHENG ,  Edward BUDIARTO ,  Surender Kumar GURUSAMY ,  Todd EGAN ,  Niranjan R. KHASGIWALE

IPC: H01L21/67 ,  G01N21/21 ,  H01L21/687

Abstract: A method and apparatus for forming an optical stack having uniform and accurate layers is provided. A processing tool used to form the optical stack comprises, within an enclosed environment, a first transfer chamber, an on-board metrology unit, and a second transfer chamber. A first plurality of processing chambers is coupled to the first transfer chamber or the second transfer chamber. The on-board metrology unit is disposed between the first transfer chamber and the second transfer chamber. The on-board metrology unit is configured to measure one or more optical properties of the individual layers of the optical stack without exposing the layers to an ambient environment.