公开(公告)号：US20230265554A1

公开(公告)日：2023-08-24

申请号：US18104437

申请日：2023-02-01

Applicant: Applied Materials, Inc.

Inventor： Takashi KURATOMI ,  Ki-Pyo HONG

IPC: C23C14/50 ,  B25B5/16 ,  C23C14/34

CPC classification number: C23C14/50 ,  B25B5/163 ,  C23C14/34

Abstract: An apparatus for processing a semiconductor substrate, such as an optical device, is described herein. The apparatus includes a substrate carrier which is configured to enable a processing chamber configured to process larger substrates to process a smaller substrate without retrofitting the processing chamber. The substrate carrier includes a carrier base and a clamp ring. The carrier base includes a plurality of gas channels formed within a substrate pocket. The clamp ring is disposed on the carrier base and over the substrate and holds the substrate in place. The clamp ring is either weighted or configured to be help by a separate chamber clamping mechanism.

公开(公告)号：US20230112967A1

公开(公告)日：2023-04-13

申请号：US17936911

申请日：2022-09-30

Applicant: Applied Materials, Inc.

Inventor： Kenichi OHNO ,  Takashi KURATOMI

IPC: C23C14/08 ,  G02B1/02 ,  C23C14/14 ,  C23C14/35 ,  C23C14/58 ,  C23C16/40 ,  C23C16/06 ,  C23C16/56

Abstract: Embodiments of the present disclosure generally relate to optical devices. More specifically, embodiments described herein relate to an optical device layer stack, an optical device formed from the optical device layer stack, and a method of forming an optical device layer stack.

公开(公告)号：US20220290290A1

公开(公告)日：2022-09-15

申请号：US17692465

申请日：2022-03-11

Applicant: Applied Materials, Inc.

Inventor： Kenichi OHNO ,  Andrew CEBALLOS ,  Karl J. ARMSTRONG ,  Takashi KURATOMI ,  Rami HOURANI ,  Ludovic GODET

IPC: C23C14/08 ,  C23C14/35 ,  C23C14/54 ,  G02B1/10

Abstract: An optical device is provided. The optical device includes an optical device substrate having a first surface; and an optical device film disposed over the first surface of the optical device substrate. The optical device film is formed of titanium oxide. The titanium oxide is selected from the group of titanium(IV) oxide (TiO2), titanium monoxide (TiO), dititanium trioxide (Ti2O3), Ti3O, Ti2O, δ-TiOx, where x is 0.68 to 0.75, and TinO2n-1, where n is 3 to 9, the optical device film has a refractive index greater than 2.72 at a 520 nanometer (nm) wavelength, and a rutile phase of the titanium oxide comprises greater than 94 percent of the optical device film.

公开(公告)号：US20210130956A1

公开(公告)日：2021-05-06

申请号：US17078664

申请日：2020-10-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Pingyan LEI ,  Dien-Yeh WU ,  Jallepally RAVI ,  Takashi KURATOMI ,  Xiaoxiong YUAN ,  Manjunatha KOPPA ,  Vinod Konda PURATHE

IPC: C23C16/455

Abstract: Embodiments of showerheads are provided herein. In some embodiments, a showerhead for use in a process chamber includes a gas distribution plate having an upper surface and a lower surface; a plurality of channels extending through the gas distribution plate substantially perpendicular to the lower surface; a plurality of first gas delivery holes extending from the upper surface to the lower surface between adjacent channels of the plurality of channels to deliver a first process gas through the gas distribution plate; and a plurality of second gas delivery holes extending from the plurality of channels to the lower surface to deliver a second process gas therethrough without mixing with the first process gas.

公开(公告)号：US20240329322A1

公开(公告)日：2024-10-03

申请号：US18625979

申请日：2024-04-03

Applicant: Applied Materials, Inc.

Inventor： Jinyu LU ,  Ludovic Godet ,  Jinxin FU ,  Kenichi OHNO ,  Shangyi Chen ,  Takashi KURATOMI ,  Erica CHEN ,  Rami HURARNI ,  Yangyang SUN

IPC: G02B6/34 ,  C23C16/40 ,  C23C16/455

CPC classification number: G02B6/34 ,  C23C16/403 ,  C23C16/45553

Abstract: Embodiments described herein relate to improved waveguides with materials layers improving the optical properties of one or more surface regions of waveguides and methods of forming the same. In one embodiment, a waveguide is provided. The waveguide including a substrate, a grating disposed in or on the substrate, the grating comprising a plurality of structures defined by a plurality of trenches, a layer of silicon oxide or aluminum oxide disposed over the structures on the substrate. The layer is disposed over sidewalls and top surfaces of the structures, and a bottom surface of the trenches. The waveguide further includes a high index layer disposed over the layer. The high index layer is disposed over the sidewalls and the top surfaces of the structures, and the bottom surface of the trenches with the layer disposed in between the structures and the high index layer.

公开(公告)号：US20210032753A1

公开(公告)日：2021-02-04

申请号：US16934343

申请日：2020-07-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Jallepally RAVI ,  Dien-Yeh WU ,  Pingyan LEI ,  Manjunatha P. KOPPA ,  Vinod Konda PURATHE ,  Takashi KURATOMI ,  Mei CHANG ,  Xiaoxiong YUAN

IPC: C23C16/455 ,  H01J37/32

Abstract: Methods and apparatus for gas distribution in a process chamber leverage dual electrodes to provide RF power and an RF ground return in a single showerhead. In some embodiments, the apparatus includes a showerhead composed of a non-metallic material with a first gas channel and a second gas channel, the first gas channel and the second gas channel being independent of each other, and the first gas channel including a plurality of through holes from a top surface of the showerhead to a bottom surface of the showerhead and the second gas channel including a plurality of holes on the bottom surface of the showerhead connected to one or more gas inlets on a side of the showerhead, a first electrode embedded in the showerhead near a top surface of the showerhead, and a second electrode embedded in the showerhead near a bottom surface of the showerhead.

公开(公告)号：US20240270007A1

公开(公告)日：2024-08-15

申请号：US18167682

申请日：2023-02-10

Applicant: Applied Materials, Inc.

Inventor： Yingdong LUO ,  Jinyu LU ,  Takashi KURATOMI ,  Alexia Adilene PORTILLO RIVERA ,  Xiaopei DENG ,  Zhengping YAO ,  Daihua ZHANG ,  Rami HOURANI ,  Ludovic GODET

IPC: B41M3/00 ,  B41J11/00 ,  G02B27/01

CPC classification number: B41M3/003 ,  B41J11/00212 ,  G02B27/0172

Abstract: Embodiments of the present disclosure generally relate to optical devices. More specifically, embodiments described herein relate to optical devices and methods of manufacturing a patterned optical device film on an optical device substrate. According to certain embodiments, an inkjet deposition process is used to deposit a patterned inkjet coating layer on the optical device substrate. A deposition process may then be used to deposit an optical device material on the patterned inkjet coating and the optical device substrate. The patterned inkjet coating on the optical device substrate may then be washed with an appropriate detergent to lift-off the patterned inkjet coating layer from the optical device substrate to form the patterned optical device film.

公开(公告)号：US20230360890A1

公开(公告)日：2023-11-09

申请号：US18131997

申请日：2023-04-07

Applicant: Applied Materials, Inc.

Inventor： Yue CHEN ,  Jinyu LU ,  Yongmei CHEN ,  Jinxin FU ,  Zihao YANG ,  Mingwei ZHU ,  Takashi KURATOMI ,  Rami HOURANI ,  Ludovic GODET ,  Qun JING ,  Jingyi YANG ,  David Masayuki ISHIKAWA

IPC: H01J37/32 ,  H01J7/02

CPC classification number: H01J37/32449 ,  H01J37/32458 ,  H01J37/32724 ,  H01J7/02 ,  H01J2237/332 ,  H01J2237/334

Abstract: A method of processing an optical device is provided, including: positioning an optical device on a substrate support in an interior volume of a process chamber, the optical device including an optical device substrate and a plurality of optical device structures formed over the optical device substrate, each optical device structure including a bulk region formed of silicon carbide and one or more surface regions formed of silicon oxycarbide. The method further includes providing one or more process gases to the interior volume of the process chamber, and generating a plasma of the one or more process gases in the interior volume for a first time period when the optical device is on the substrate support, and stopping the plasma after the first time period. A carbon content of the one or more surface regions of each optical device structure is reduced by at least 50% by the plasma.

公开(公告)号：US20230333309A1

公开(公告)日：2023-10-19

申请号：US18132812

申请日：2023-04-10

Applicant: Applied Materials, Inc.

Inventor： Rui LI ,  Takashi KURATOMI ,  Alexia Adilene PORTILLO RIVERA

IPC: C23C14/34 ,  F21V8/00 ,  C23C14/22 ,  C23C14/08 ,  C23C14/10

CPC classification number: G02B6/0065 ,  C23C14/083 ,  C23C14/10 ,  C23C14/228 ,  C23C14/34 ,  G02B6/0016 ,  G02B5/1857

Abstract: Embodiments of the present disclosure generally relate to optical devices having barrier layers for reduced hardmask diffusion and/or hardmask residue, and related methods of forming the optical devices. In one or more embodiments, a plurality of optical device structures each include a barrier layer disposed between a device function layer and a hardmask layer prior to removal of the hardmask layer.

公开(公告)号：US20210319983A1

公开(公告)日：2021-10-14

申请号：US16846295

申请日：2020-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Pingyan LEI ,  Dien-Yeh WU ,  Xiao Ming HE ,  Jennifer Y. SUN ,  Lei ZHOU ,  Takashi KURATOMI ,  Avgerinos V. GELATOS ,  Mei CHANG ,  Steven D. MARCUS

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/06 ,  C23C16/44 ,  C23C16/455

Abstract: Methods and apparatus for depositing a coating on a semiconductor manufacturing apparatus component are provided herein. In some embodiments, a method of depositing a coating on a semiconductor manufacturing apparatus component includes: sequentially exposing a semiconductor manufacturing apparatus component including nickel or nickel alloy to an aluminum precursor and a reactant to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component by a deposition process.