POLISHING PADS HAVING IMPROVED PORE STRUCTURE

    公开(公告)号:US20220362904A1

    公开(公告)日:2022-11-17

    申请号:US17321694

    申请日:2021-05-17

    Abstract: Embodiments herein generally relate to polishing pads and methods of forming polishing pads. A method of forming a polishing pad includes (a) dispensing droplets of a pre-polymer composition and droplets of a sacrificial material composition onto a surface of a previously formed print layer according to a predetermined droplet dispense pattern. The method includes (b) at least partially curing the dispensed droplets of the pre-polymer composition to form a print layer. The method includes (c) sequentially repeating (a) and (b) to form a polishing layer having a plurality of pore-features formed therein. The pre-polymer composition includes a multifunctional acrylate component. A curing rate of the dispensed droplets of the pre-polymer composition including the multifunctional acrylate component when exposed to a first dose of electromagnetic radiation is greater than a curing rate of the pre-polymer composition without the multifunctional acrylate component when exposed to the same first dose of electromagnetic radiation.

    DIE REPAIR PROCESS IN MICROLED DISPLAY FABRICATION

    公开(公告)号:US20250056920A1

    公开(公告)日:2025-02-13

    申请号:US18797189

    申请日:2024-08-07

    Abstract: The present disclosure provides devices and methods for repairing dice during micro-LED display fabrication. The devices include a backplane. The backplane has a plurality of backplane electrodes. Each backplane electrode includes a first material. A plurality of micro-LEDs having a plurality of micro-LED electrodes is included in the device. Each micro-LED electrode includes a second material. Each micro-LED electrode is bonded to each backplane electrode with an alloy of the first material and the second material therebetween. At least one backplane electrode is bonded to the micro-LED electrode via a repair material. The device includes a plurality of subpixel isolation (SI) structures formed over the backplane. The SI structures define wells of sub-pixels. Each well includes a respective micro-LED between adjacent SI structures. The sub-pixels have a color conversion material disposed in the wells.

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