公开(公告)号：US20150132551A1

公开(公告)日：2015-05-14

申请号：US14531549

申请日：2014-11-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Yong CAO ,  Daniel Lee DIEHL ,  Rongjun WANG ,  Xianmin TANG ,  Tai-Chou Papo CHEN ,  Tingjun XU

IPC: H01L31/0216 ,  H01L31/18 ,  H01L31/032 ,  C23C14/35

CPC classification number: H01L31/02161 ,  C23C14/0042 ,  C23C14/0084 ,  C23C14/0652 ,  C23C14/0676 ,  C23C14/35 ,  G02B1/115 ,  H01L31/02168 ,  H01L31/18 ,  Y02E10/50 ,  Y10T428/24942

Abstract: A method for forming an anti-reflective coating (ARC) includes positioning a substrate below a target and flowing a first gas to deposit a first portion of the graded ARC onto the substrate. The method includes gradually flowing a second gas to deposit a second portion of the graded ARC, and gradually flowing a third gas while simultaneously gradually decreasing the flow of the second gas to deposit a third portion of the graded ARC. The method also includes flowing the third gas after stopping the flow of the second gas to form a fourth portion of the graded ARC. In another embodiment a film stack having a substrate having a graded ARC disposed thereon is provided. The graded ARC includes a first portion, a second portion disposed on the first portion, a third portion disposed on the second portion, and a fourth portion disposed on the third portion.

Abstract translation: 用于形成抗反射涂层（ARC）的方法包括将基底定位在靶材下方并流动第一气体以将渐变ARC的第一部分沉积到基底上。 该方法包括逐渐流动第二气体以沉积分级ARC的第二部分，并逐渐流动第三气体，同时逐渐减少第二气体的流动以沉积渐变ARC的第三部分。 该方法还包括在停止第二气体的流动之后流动第三气体以形成分级ARC的第四部分。 在另一个实施例中，提供了具有设置在其上的具有分级ARC的基板的薄膜叠层。 分级ARC包括第一部分，设置在第一部分上的第二部分，设置在第二部分上的第三部分和设置在第三部分上的第四部分。

公开(公告)号：US20190051768A1

公开(公告)日：2019-02-14

申请号：US16154330

申请日：2018-10-08

Applicant: Applied Materials, Inc.

Inventor： Yong CAO ,  Daniel Lee DIEHL ,  Rongjun WANG ,  Xianmin TANG ,  Tai-chou Papo CHEN ,  Tingjun XU

IPC: H01L31/0216 ,  C23C14/35 ,  C23C14/00 ,  H01L31/18 ,  G02B1/115 ,  C23C14/06

Abstract: A method for forming an anti-reflective coating (ARC) includes positioning a substrate below a target and flowing a first gas to deposit a first portion of the graded ARC onto the substrate. The method includes gradually flowing a second gas to deposit a second portion of the graded ARC, and gradually flowing a third gas while simultaneously gradually decreasing the flow of the second gas to deposit a third portion of the graded ARC. The method also includes flowing the third gas after stopping the flow of the second gas to form a fourth portion of the graded ARC. In another embodiment a film stack having a substrate having a graded ARC disposed thereon is provided. The graded ARC includes a first portion, a second portion disposed on the first portion, a third portion disposed on the second portion, and a fourth portion disposed on the third portion.

公开(公告)号：US20160042951A1

公开(公告)日：2016-02-11

申请号：US14878514

申请日：2015-10-08

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis BENCHER ,  Daniel Lee DIEHL ,  Huixiong DAI ,  Yong CAO ,  Tingjun XU ,  Weimin (Wilson) ZENG ,  Peng XIE

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01L21/308 ,  C23C14/35 ,  C23C14/14

CPC classification number: H01L21/0337 ,  C23C14/0042 ,  C23C14/06 ,  C23C14/14 ,  C23C14/351 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02266 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144

Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

Abstract translation: 本文的实施方案提供了用于形成PVD氧化硅或富硅氧化物或PVD SiN或富硅SiN或富SiC或富硅SiC的方法或前述组合，包括将氢控制掺入到迄今为止参考的化合物 作为SiO x N y C z：H w，其中w，x，y和z可以在0％至100％的浓度范围内变化，作为具有与曝光波长下的光致抗蚀剂基本匹配的光学性质的硬掩模。 因此使相对于光致抗蚀剂光学平坦化的硬掩模。 这允许在硬掩模中的多个序列的光刻和蚀刻，而光致抗蚀剂基本上保持没有光学形貌或反射率变化。

公开(公告)号：US20150114827A1

公开(公告)日：2015-04-30

申请号：US14062610

申请日：2013-10-24

Applicant: Applied Materials, Inc.

Inventor： Yong CAO ,  Tingjun XU ,  Rajkumar JAKKARAJU ,  Rongjun WANG

IPC: H01L21/02 ,  C23C14/34

CPC classification number: H01L21/02266 ,  C23C14/0036 ,  C23C14/0676 ,  H01L21/02178 ,  H01L21/31111

Abstract: Methods for forming a metal dielectric etching stop layer onto a substrate with good etching selectivity and low wet etching rate. In one embodiment, a method of sputter depositing a metal dielectric etching stop layer on the substrate includes transferring a substrate in a processing chamber, supplying a gas mixture including at least N2 gas into the processing chamber, applying a RF power to form a plasma from the gas mixture to sputter source material from a target disposed in the processing chamber, maintaining a substrate temperature less than about 320 degrees Celsius, and depositing a metal dielectric etching stop layer onto the substrate from the sputtered source material.

Abstract translation: 在具有良好蚀刻选择性和低湿蚀刻速率的基板上形成金属电介质蚀刻停止层的方法。 在一个实施例中，在衬底上溅射沉积金属电介质蚀刻停止层的方法包括在处理室中转移衬底，将至少包括N 2气体的气体混合物供应到处理室中，施加RF功率以形成等离子体 所述气体混合物从设置在所述处理室中的靶溅射源材料，保持低于约320摄氏度的衬底温度，以及从所述溅射源材料在所述衬底上沉积金属电介质蚀刻停止层。

公开(公告)号：US20140327117A1

公开(公告)日：2014-11-06

申请号：US14269010

申请日：2014-05-02

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis BENCHER ,  Daniel Lee DIEHL ,  Huixiong DAI ,  Yong CAO ,  Tingjun XU ,  Weimin (Wilson) ZENG ,  Peng XIE

IPC: H01L21/033

CPC classification number: H01L21/0337 ,  C23C14/0042 ,  C23C14/06 ,  C23C14/14 ,  C23C14/351 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02266 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144

Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

Abstract translation: 本文的实施方案提供了用于形成PVD氧化硅或富硅氧化物或PVD SiN或富硅SiN或富SiC或富硅SiC的方法或前述组合，包括将氢控制掺入到迄今为止参考的化合物 作为SiO x N y C z：H w，其中w，x，y和z可以在0％至100％的浓度范围内变化，作为具有与曝光波长下的光致抗蚀剂基本匹配的光学性质的硬掩模。 因此使相对于光致抗蚀剂光学平坦化的硬掩模。 这允许在硬掩模中的多个序列的光刻和蚀刻，而光致抗蚀剂基本上保持没有光学形貌或反射率变化。