公开(公告)号：US20180142343A1

公开(公告)日：2018-05-24

申请号：US15814497

申请日：2017-11-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Weimin ZENG ,  Yong CAO ,  Daniel Lee DIEHL ,  Huixiong DAI ,  Khoi PHAN ,  Christopher NGAI ,  Rongjun WANG ,  Xianmin TANG

IPC: C23C14/35 ,  C23C14/22 ,  C23C14/14 ,  C23C14/54

CPC classification number: C23C14/35 ,  C23C14/0057 ,  C23C14/042 ,  C23C14/06 ,  C23C14/14 ,  C23C14/228 ,  C23C14/54 ,  H01J37/34 ,  H01J2237/332

Abstract: In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas and a hydrogen-containing gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein adjusting the flow rate of the hydrogen containing gas tunes the optical properties of the deposited amorphous silicon layer.