公开(公告)号：US20210320246A1

公开(公告)日：2021-10-14

申请号：US16845600

申请日：2020-04-10

申请人： APPLIED MATERIALS, INC.

发明人： Xiaodong WANG ,  Renu WHIG ,  Jianxin LEI ,  Rongjun WANG

IPC分类号： H01L43/12 ,  H01L43/10

摘要： A method of forming a tunnel layer of a magnetoresistive random-access memory (MRAM) structure includes forming a first magnesium oxide (MgO) layer by sputtering an MgO target using radio frequency (RF) power, exposing the first MgO layer to oxygen for approximately 5 seconds to approximately 20 seconds at a flow rate of approximately 10 sccm to approximately 15 sccm, and forming a second MgO layer on the first MgO layer by sputtering the MgO target using RF power. The method may be performed after periodic maintenance of a process chamber to increase the tunnel magnetoresistance (TMR) of the tunnel layer.

公开(公告)号：US20170253959A1

公开(公告)日：2017-09-07

申请号：US15448996

申请日：2017-03-03

申请人： APPLIED MATERIALS, INC.

发明人： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC分类号： C23C14/35 ,  H01J37/34 ,  C23C14/54

CPC分类号： C23C14/351 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3447 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76871 ,  H01L21/76879

摘要： Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.

公开(公告)号：US20220081758A1

公开(公告)日：2022-03-17

申请号：US17019949

申请日：2020-09-14

申请人： APPLIED MATERIALS, INC.

发明人： Xiaodong WANG ,  Michael Charles KUTNEY ,  Varoujan CHAKARIAN ,  Jianxin LEI ,  Rongjun WANG

IPC分类号： C23C14/54 ,  C23C14/50 ,  C23C14/24

摘要： Methods and apparatus that monitors deposition on a shutter disk in-situ. In some embodiments that apparatus may include a process chamber with an internal processing volume, an enclosure disposed external to the internal processing volume where the enclosure accepts a shutter disk when the shutter disk is not in use in the internal processing volume, a shutter disk arm that moves the shutter disk back and forth from the enclosure to the internal processing volume, and at least one sensor integrated into the enclosure. The at least one sensor is configured to determine at least one film property of a material deposited on the shutter disk after a pasting process in the internal processing volume.

公开(公告)号：US20240038541A1

公开(公告)日：2024-02-01

申请号：US17961153

申请日：2022-10-06

申请人： Applied Materials, Inc.

发明人： Jiajie CEN ,  Xiaodong WANG ,  Kevin KASHEFI ,  Shi YOU

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065

摘要： Methods for cleaning oxides from a substrate surface are performed without affecting low-k dielectric or carbon materials on the substrate. In some embodiments, the method may include performing a preclean process with a chlorine-based soak to remove oxides from a surface of a substrate in a back end of the line (BEOL) process and treating the surface of the substrate with a remote plasma with a hydrogen gas and at least one inert gas to remove residual chlorine residue from the surface of the substrate without damaging low-k dielectric material or carbon material on the substrate.

公开(公告)号：US20210320247A1

公开(公告)日：2021-10-14

申请号：US17307783

申请日：2021-05-04

申请人： Applied Materials, Inc.

发明人： Lin XUE ,  Chi Hong CHING ,  Xiaodong WANG ,  Mahendra PAKALA ,  Rongjun WANG

IPC分类号： H01L43/12 ,  G11C11/16 ,  H01L27/22 ,  H01L27/12

摘要： Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film stack to create a film stack with a sufficiently high perpendicular magnetic anisotropy (PMA). An iron containing oxide capping layer is utilized to generate the desirable PMA. By utilizing an iron containing oxide capping layer, thickness of the capping layer can be more finely controlled and reliance on boron at the interface of the magnetic storage layer and the capping layer is reduced.

公开(公告)号：US20220020577A1

公开(公告)日：2022-01-20

申请号：US17490840

申请日：2021-09-30

申请人： APPLIED MATERIALS, INC.

发明人： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54

摘要： Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US20220005679A1

公开(公告)日：2022-01-06

申请号：US16918513

申请日：2020-07-01

申请人： APPLIED MATERIALS, INC.

发明人： Xiaodong WANG ,  Jianxin LEI ,  Rongjun WANG

IPC分类号： H01J37/34 ,  C23C14/34

摘要： Methods and apparatus for plasma chamber target for reducing defects in workpiece during dielectric sputtering are provided. For example, a dielectric sputter deposition target can comprise a dielectric compound having a predefined average grain size ranging from approximately 65 μm to 500 μm, wherein the dielectric compound is at least one of magnesium oxide or aluminum oxide.

公开(公告)号：US20210071294A1

公开(公告)日：2021-03-11

申请号：US17101933

申请日：2020-11-23

申请人： APPLIED MATERIALS, INC.

发明人： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC分类号： C23C14/35 ,  C23C14/54 ,  H01J37/34

摘要： Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a physical vapor deposition chamber includes: a body having an interior volume and a lid assembly including a target to be sputtered; a magnetron disposed above the target, wherein the magnetron is configured to rotate a plurality of magnets about a central axis of the physical vapor deposition chamber; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support a substrate; a collimator disposed between the target and the substrate support, the collimator having a central region having a first thickness and a peripheral region having a second thickness less than the first thickness; a first power source coupled to the target to electrically bias the target; and a second power source coupled to the substrate support to electrically bias the substrate support.

公开(公告)号：US20200259078A1

公开(公告)日：2020-08-13

申请号：US16859350

申请日：2020-04-27

申请人： Applied Materials, Inc.

发明人： Lin XUE ,  Chi Hong CHING ,  Xiaodong WANG ,  Mahendra PAKALA ,  Rongjun WANG

IPC分类号： H01L43/12 ,  H01L27/22 ,  G11C11/16

摘要： Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film stack to create a film stack with a sufficiently high perpendicular magnetic anisotropy (PMA). An iron containing oxide capping layer is utilized to generate the desirable PMA. By utilizing an iron containing oxide capping layer, thickness of the capping layer can be more finely controlled and reliance on boron at the interface of the magnetic storage layer and the capping layer is reduced.

公开(公告)号：US20230402271A1

公开(公告)日：2023-12-14

申请号：US18237934

申请日：2023-08-25

申请人： APPLIED MATERIALS, INC.

发明人： Xiaodong WANG ,  Joung Joo LEE ,  Fuhong ZHANG ,  Martin Lee RIKER ,  Keith A. MILLER ,  William FRUCHTERMAN ,  Rongjun WANG ,  Adolph Miller ALLEN ,  Shouyin ZHANG ,  Xianmin TANG

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54

CPC分类号： H01J37/3458 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3411 ,  C23C14/345 ,  H01J37/3441 ,  H01J37/3402 ,  C23C14/351 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3447 ,  H01J37/3455

摘要： Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.