公开(公告)号：US20240332023A1

公开(公告)日：2024-10-03

申请号：US18621828

申请日：2024-03-29

申请人： Applied Materials, Inc.

发明人： Ying-Bing JIANG ,  In Seok HWANG ,  Zhijun CHEN ,  Avgerinos V. GELATOS ,  Joung Joo LEE ,  Xianmin TANG ,  Fredrick FISHBURN ,  Le ZHANG ,  Wangee KIM ,  Mahendra PAKALA

IPC分类号： H01L21/285 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/28518 ,  C23C16/24 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45557

摘要： The present disclosure relates to a method of selectively forming a silicide in high-aspect ratio structures by use of a multistep deposition process. A first precursor gas is delivered to a surface disposed within a processing region of a process chamber maintained at a first process pressure, where the substrate is maintained at a first temperature for a first period of time. A purge gas is delivered to for a second period of time after the first period of time has elapsed. A second precursor gas is delivered to the surface of the substrate. The second precursor being maintained at a second process pressure while the substrate is maintained at a second temperature for a third period of time. The purge gas is delivered to the processing region for a fourth period of time after the third period of time has elapsed.

公开(公告)号：US20230380145A1

公开(公告)日：2023-11-23

申请号：US18141557

申请日：2023-05-01

申请人： Applied Materials, Inc.

发明人： Zhijun CHEN ,  Fredrick FISHBURN ,  Ying-Bing JIANG ,  Avgerinos V. GELATOS

IPC分类号： H10B12/00 ,  H10B80/00 ,  H01L25/065

CPC分类号： H10B12/482 ,  H10B80/00 ,  H01L25/0657 ,  H10B12/488 ,  H10B12/02

摘要： A semiconductor structure includes a plurality of memory levels stacked in a first direction, each of the plurality of memory levels including a semiconductor layer, a word line metal layer, and an interface on a cross section of the semiconductor layer, a spacer between adjacent memory levels of the plurality of memory levels in the first direction, and a bit line in contact with the interface of each of the plurality of memory levels, the bit line extending in the first direction. The bit line comprises metal material, and the interface comprises silicide.

公开(公告)号：US20230377892A1

公开(公告)日：2023-11-23

申请号：US17748329

申请日：2022-05-19

申请人： Applied Materials, Inc.

发明人： Yiyang WAN ,  Weifeng YE ,  Shumao ZHANG ,  Gary HOW ,  Jiang LU ,  Lei ZHOU ,  Dien-yeh WU ,  Douglas LONG ,  Avgerinos V. GELATOS ,  Ying-Bing JIANG ,  Rongjun WANG ,  Xianmin TANG ,  Halbert CHONG

IPC分类号： H01L21/285 ,  H01J37/32 ,  C23C16/42 ,  C23C16/507

CPC分类号： H01L21/28518 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32357 ,  C23C16/42 ,  C23C16/507 ,  H01J37/32816 ,  H01J2237/332

摘要： Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises forming a plasma reaction between titanium tetrachloride (TlCl4), hydrogen (H2), and argon (Ar) in a region between a lid heater and a showerhead of a process chamber or the showerhead and a substrate while providing RF power at a pulse frequency of about 5 kHz to about 100 kHz and at a duty cycle of about 10% to about 20% and flowing reaction products into the process chamber to selectively form a titanium material layer upon a silicon surface of the substrate.

公开(公告)号：US20240191354A1

公开(公告)日：2024-06-13

申请号：US18078841

申请日：2022-12-09

申请人： Applied Materials, Inc.

发明人： Ying-Bing JIANG ,  Joung Joo LEE ,  Xianmin TANG ,  Jiang LU ,  Avgerinos V. GELATOS ,  Dien-yeh WU ,  Weifeng YE ,  Yiyang WAN ,  Gary HOW ,  Joseph HERNANDEZ

IPC分类号： C23C16/455 ,  C23C16/42 ,  C23C16/505 ,  H01J37/32

CPC分类号： C23C16/45536 ,  C23C16/42 ,  C23C16/45553 ,  C23C16/45565 ,  C23C16/505 ,  H01J37/321 ,  H01J2237/3321

摘要： Methods of depositing a metal silicide on a substrate are provided herein. In some embodiments, a method of depositing a metal silicide on a substrate having a silicon containing surface includes: creating a plasma comprising a first gas in a plasma region in a chemical vapor deposition (CVD) chamber, wherein the plasma region is disposed between a lid heater and a showerhead; flowing the first gas through a plurality of first openings of the showerhead to an activation region in the CVD chamber disposed between the showerhead and the substrate; flowing a second gas comprising a metal precursor in a non-plasma state through a plurality of second openings of the showerhead to the activation region, wherein the plurality of second openings are fluidly independent from the plurality of first openings within the showerhead; mixing the first gas with the second gas to activate the second gas in the activation region; and exposing the silicon containing surface of the substrate to the activated second gas.